• 한국결정성장학회지
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• 제8권1호
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• pp.10-17
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• 1998

Lithium Niobate($LiNbO_3$) 단결정 소재의 광손상에 대한 저항성을 향상시키는 첨가이온으로 잘 알려져 있는 $Mg^{2+}$ 및 $Zn^{2+}$ 이온을 첨가하여 육성한 단결정들의 특성을 비교 분석하였다. 특히 고강도 laser 광의 조사시에 더욱 우수한 특성을 보이는 것으로 알려진 $Zn^{2+}$이온의 첨가량에 따른 광학적 특성 및 전기적 특성의 변화를 측정하여 광손상 저항성을 평가하였으며, 고강도 laser 기기에의 응용 가능성을 고찰하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1998년도 춘계연구발표회 논문개요집
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• pp.68-69
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• 1998

• 한국결정성장학회지
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• 제6권3호
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• pp.368-376
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• 1996

균일한 조성과 doping 효과를 얻을 수 있는 floating zone(FZ)법으로 조화용융조성의 undoped $LiNbO_{3}$ 및 5 mol%의 MgO 또는 ZnO를 각각 첨가한 $LiNbO_{3}$ 단결정을 육성하였다. 결정성장시 최적성장조건을 실험적으로 확립하였으며, 결정내에 존재하는 domain 구조, 전위구조, slip band, 미세쌍정등의 결함구조를 조사 및 분석하였다.

• Journal of Electrochemical Science and Technology
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• 제13권2호
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• pp.177-185
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• 2022

Electrochemical properties of LiMn₂O₄ cathode were investigated in three types of Zn-containing electrolytes: lithium-zinc sulfate electrolyte (1M ZnSO₄ / 2M Li₂SO₄), zinc sulfate electrolyte (2MZnSO₄) and lithium-zinc-manganese sulfate electrolyte (1MZnSO₄ / 2MLi₂SO₄ / 0.1MMnSO₄). Cyclic voltammetry measurements demonstrated that LiMn₂O₄ is electrochemically inactive in pure ZnSO₄ electrolyte after initial oxidation. The effect of manganese (II) additive in the zinc-manganese sulfate electrolyte on the electrochemical performance was analyzed. The initial capacity of LiMn₂O₄ is higher in presence of MnSO₄ (140 mAh g^-1 in 1 M ZnSO₄ / 2 M Li₂SO₄ / 0.1 M MnSO₄ and 120 mAh g^-1 in 1 M ZnSO₄ / 2MLi₂SO₄). The capacity increase can be explained by the electrodeposition of MnO_x layer on the electrode surface. Structural characterization of postmortem electrodes with use of XRD and EDX analysis confirmed that partially formed in pure ZnSO₄ electrolyte Zn-containing phase leads to fast capacity fading which is probably related to blocked electroactive sites.

• 한국세라믹학회지
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• 제43권11호
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• pp.738-742
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• 2006

We report on the effects of co-doping with fluorine on properties of ZnO thin films grown by pulsed-laser deposition. The transport characteristics of Ag-F and Li-F codoped ZnO films were determined by Hall-effect measurements at room temperature. Ag-F codoped ZnO films showed n-type semiconducting behaviors. An ambiguous carrier type was observed in Li-F codoped ZnO films grown at a temperature of 500$^{\circ}C$ with the oxygen pressures of 20 and 200 mTorr. The qualities of the codoped ZnO films were studied by X-ray diffraction, atomic force microscopy, X-ray photoemission spectroscopy, and photoluminescence.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.297-297
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• 2007

The $(B_{0.5},Sr_{0.5})TiO_3$ ceramics, which added with low sintering materials $Li_2CO_3$ and ZnBO, was investigated for LTCC(low temperature co-fired ceramic) applications. To compare sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ respectively, we added 1, 2, 3, 4, and 5wt% of $Li_2CO_3$ and ZnBO to $(B_{0.5},Sr_{0.5})TiO_3$. For confirming the sintering temperature, the respective specimens were sintered from $750^{\circ}C$ to $1200^{\circ}C$ by $50^{\circ}C$. The case of $Li_2CO_3$ greatly lowered the sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ ($1350^{\circ}C$) below $900^{\circ}C$. The addition of ZnBO improved the loss tangent of $(B_{0.5},Sr_{0.5})TiO_3$. The crystalline structure of $LiCO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ and ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$ was analyzed with the X-ray diffraction (XRD) analysis. The dielectric permittivity and loss tangent of $Li_2CO_3$ doped BST and ZnBO doped BST were measured with the HP 4284A precision. From the electrical characterization, we respectively obtained the dielectric permittivity 1361, loss tangent $6.94{\times}10^{-3}$ at $Li_2CO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ (3wt%) and the dielectric constant 1180, loss tangent $3.70{\times}10^{-3}$ at ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$(5wt%).

• Korean Chemical Engineering Research
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• 제59권1호
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• pp.42-48
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• 2021

본 연구에서는 LiNi0.85Co0.15O2의 전기화학적 특성과 열적 안정성을 향상시키기 위하여 LiNi0.85Co0.15O2에 이종원소인 Zn와 Al을 함께 첨가하여 고상법으로 합성하였다. 물질의 결정 구조, 크기 및 표면 상태는 XRD, SEM을 이용하여 분석하였고 전기화학적 특성은 충방전기를 이용하여 CV(cyclic voltammetry), 초기 충·방전 프로파일, 출력 특성, 수명 특성 등을 측정하였다. Al-O의 강한 결합에너지는 양극활물질의 구조적 안정성을 향상시켰으며, Li+와 Ni2+의 양이온 혼합을 막아 전기화학적 특성 또한 향상되었다. Zn의 큰 이온반경은 양극활물질의 격자상수를 증가시켜 단위 셀의 부피가 확장되었다. Zn와 Al을 0.025몰씩 첨가한 물질의 경우, 0.5 C-rate의 전류밀도에서 100 사이클 동안 80%의 용량 유지율을 보여주었으며 이 결과는 NC 양극활물질보다 12% 높은 수치이다. 또한, 5 C-rate에서의 방전용량은 104 mAh/g으로 기존의 NC 양극활물질보다 36 mAh/g 높은 수치를 보였다. Zn과 Al이 0.025몰씩 첨가된 NC 양극활물질은 출력 특성, 수명 특성에서 우수한 특성을 보여주었다.

• 한국결정성장학회지
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• 제12권1호
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• pp.50-55
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• 2002

$LiNbO_3$ 단결정에 $Nd_2O_3$0.2~0.5 wt.%를 칭량하여 결정을 성장 시켰다. 그리고 광손상을 억제하기 위해 ZnO 2~8 mole%를 첨가하여 광손상에 대한 저항성을 높였다. 본 연구에서는 Nd가 doping된 단결정을 성장시켜 주기적인 domain을 만들고자 하였다

• 한국세라믹학회지
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• 제18권2호
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• pp.99-104
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• 1981

Glass-ceramics possessed a number of characteristics which suggested their suggested their use for sealing to metals. The choice of particular glass-ceramics compositions for this application is governed by various factors, including workability of the glasses, thermal expansion characteristics and the matching of these to appropriate metals. Other properties, such as mechanical strength, determined the performance of glass-ceramics to metal seals. The purpose of the present study was to investigate direct sealing behaviour of copper to $Li_2O-ZnO-SiO_2$ system glass-ceramics. The design of the seal was a concentric seal which might contribute to the strong bond formation by providing compressive stress during thermal excursions. Tensile strengths of sealing layers were measured by Instron test machine. The layers were examined by electron probe microanalyzer. Crsystallization rate was increased with the amount of ZnO or $Li_2O$, and ZnO increased the sealing strength, but $Li_2O$ lowered it. Sealing mechanism was due to the formation of metal oxides, which acted as binder between copper and glass-ceramics. The nickle-plated copper seal with 10% $Li_2O$ and 30% ZnO was the most strong seal, and its sealing strength was more than 56kg/$\textrm{cm}^2$.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.298-303
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• 1996

A double diffusion technique is developed to enhance the effective mode index of optical waveguides in $LiTaO_3$. It consists of Zn diffusion from the vapor phase at relatively low temperatures (750->$800^{\circ}C$), into waveguides initially produced by Ti indiffusion at higher temperature (1150->$1200^{\circ}C$). Both X- and Z-cut substrates are investigated. A model that combines profiles of both diffusion is formulated to calculate the expected effective index values for planar waveguides. Good agreement is found between experimental results and model predictions which assume that the initial Ti profile is not affected by the lower temperature Zn diffusion. Effective index enhancements as high as 0.005 and 0.003 are obtained by this method for the fundamental extraordinary and ordinary modes, respectively.