• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05c
• /
• pp.123-126
• /
• 2001

The $0.98MgTiO_3-0.02BaTiO_3$ ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and EDS. According to the X-ray diffraction patterns of the $0.98MgTiO_3-0.02BaTiO_3$ ceramics, the hexagonal $BaMg_6Ti_6O_{19}$ and ilmenite $MgTiO_3$ structures were coexisted. The dielectric constant$({\varepsilin}_r)$ and quality factor$(Q{\times}f_r)$ were decreased with increasing the sintering temperature in the range of $1275^{\circ}C{\sim}1350^{\circ}C$. In the case of the $0.98MgTiO_3-0.02BaTiO_3$ ceramics sintered at $1275^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.27, 76,845, $-46.6ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.330-330
• /
• 2008

$Fe_2O_3$ added Pb$(Ni_{1/3}Nb_{2/3})O_3-PbTiO_3-PbZrO_3 $ (PNN-PT-PZ) ceramics were produced in order to use them as a bimoph acturator for energy harvesting. Especially, the 0.25 wt% $Fe_2O_3$ added 0.4PNN-0.357PT-0.243PZ, having the composition of morphotropic phase boundary, showed good piezoelectric properties of $d_{33}$ of 810 pC/N, $k_p$ of 77% and $Q_m$ of 55 along with a high Curie temperature of $210^{\circ}C$. A bimorph actuator, composed of the two piezoelectric layers bonded together with a phosphorous bronze layer as a central metallic electrode, was successfully fabricated. The bimorph actuator, vibrated with a 1.3 mm amplitude at 68 Hz, produced high electric power of approximately 60 mW.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.760-765
• /
• 2009

The effects of $Fe_2O_3$ addition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\gamma}$ (secondary electron emission coefficient) than pure MgO protective layer. Roughness increased with amount of $Fe_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as roughness. Good optical and electrical properties of ${\gamma}$ of 0.120, surface roughness of 14.1 nm and optical transmittance of 94.55% were obtained for the MgO + 100 ppm $Fe_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.7
• /
• pp.620-625
• /
• 2007

The effects of $Gd_2O_3$ addition and sintering condition on optical and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. Doped MgO films prepared by the e-beam evaporation have a higher ${\Upsilon}$ (secondary electron emission coefficient) than pure MgO protective layer. Relative density and grain size increased with amount of $Gd_2O_3$ up to 100 ppm and then decreased further addition. These results showed that discharge properties and optical properties of MgO protective layers seemed to be closely related with microstructure factors such as relative density and grain size. Good optical and electrical properties of ${\Upsilon}$ of 0.138, surface roughness of 5.77 nm and optical transmittance of 95.76 % were obtained for the MgO+100 ppm $Gd_2O_3$ protective layer sintered at $1700^{\circ}C$ for 5 hrs.

• Proceedings of the KIEE Conference
• /
• 2002.07c
• /
• pp.1488-1490
• /
• 2002

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.

• Journal of the Korean Ceramic Society
• /
• v.55 no.6
• /
• pp.576-580
• /
• 2018

In this study, a small amount of CoO was added to commercial Gd-doped $CeO_2$ (GDC) powder. The CoO addition greatly enhanced sinterability at low temperatures, i.e., more than 98% of relative density was achieved at $1,000^{\circ}C$. When GDC/8YSZ (8 mol% yttrium stabilized zirconia) bilayers were sintered, Co-doped GDC showed excellent adhesion to the YSZ electrolyte. Transmission electron microscope (TEM) analysis showed that there were no traces of liquid films at the grain boundaries of GDC, whereas liquid films were observed in the Co-doped GDC sample. Because liquid films facilitate particle rearrangement and migration during sintering, mechanical stresses at the interface of a bilayer, which are developed based on different densification rates between the layers, might be reduced. In spite of $Co^{2+}$ doping in GDC, the electrical conductivity was not significantly changed, relative to GDC.

• Bulletin of the Korean Chemical Society
• /
• v.23 no.9
• /
• pp.1325-1327
• /
• 2002

• Proceedings of the Korean Reliability Society Conference
• /
• 2006.05a
• /
• pp.291-297
• /
• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.611-615
• /
• 2003

The crystalline and dielectric properties on $Al_2O_3$ filled glass frit ($CaO-Al_2O_3-SiO_2-MgO-B_2O_3$) with admixtures of $TiO_2$ have been investigated. The dielectric constant value of $7.5{\sim}7.8$, quality factor value of 700 were obtained for glass frit : $Al_2O_3$ (50 : 50 wt%) ceramics. As the amount of $TiO_2$ increased, temperature coefficient of dielectric constant were decreased.

• Proceedings of the KIEE Conference
• /
• 1993.11a
• /
• pp.185-187
• /
• 1993

0.15BaO-$0.15Sm_2O_3-0.7TiO_2$, ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering temperature and annealing time. In the specimen sintered at 1350[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency had a good values of 80.19, 2006 (at 4.6851[GHz]), -27.54[ppm/$^{\circ}C$], respectively. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. Temperature coefficient of resonant frequency was minimum value (-1.28[ppm/$^{\circ}C$]) at 4 [hr] annealed.