• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.56.2-56.2
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• 2007

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2016.10a
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• pp.95-96
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• 2016

• Journal of Electrical Engineering and Technology
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• v.12 no.6
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• pp.2324-2332
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• 2017

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current ($I_{on}$), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length ($L_G$) was scaled down. The proposed TFET with a $L_G$ of 5 nm operated with an $I_{on}$ of $1.3mA/{\mu}m$, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage ($V_{DS}$) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional $L_G$ of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.

• Journal of Crop Science and Biotechnology
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• v.10 no.1
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• pp.45-49
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• 2007

Silicon is one of the key elements for healthy growth and development in rice crops. We analyzed the effect of silicon(Si) on some growth parameters, plant mineral contents, and bioactive gibberellins in three rice cultivars. Silicon was applied at the rates of 0 kg/0.1ha(control), 40 kg/0.1ha, and 80 kg/0.1ha throughout the course of experiment. Plant growth parameters were enhanced by the application of elevated Si, though plant height and culm length were more favorably affected than the respective dry weights. The plant mineral contents analyzed also increased in treatments where Si was applied without potassium, demonstrating that Si application promotes the absorption of these minerals in rice crops. The endogenous gibberellins measured in our study showed that $GA_1$ is the only bioactive GA form present in rice seedlings. The endogenous $GA_1$ and its precursor $GA_{20}$ contents increased after Si application. However, this increase in endogenous $GA_1$ and $GA_{20}$ contents, and plant growth parameters were different according to the rice cultivars. Our results indicate that Si is a beneficial element in rice nutrition and that different cultivars of Oryza sativa show differential responses to Si nutrition in terms of their growth and development.

• Journal of Crop Science and Biotechnology
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• v.11 no.4
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• pp.223-226
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• 2008

Seedlings of two rice cultivars i.e. cv. Daesanbyeo and cv. Dongjinbyeo were analyzed for growth and endogenous gibberellins (GAs) in response to nitrogen nutrition applied in the forms of $KNO_3$, $(NH_4)_2SO_4$ and $NH_4NO_3$. All the growth parameters showed an increase in N applied treatments and their magnitudes of increase were different depending on different nitrogen fertilizer forms. The endogenous GAs contents were increased with N application but differentially affected by various N-forms in both rice cultivars. In cv. Daesanbyeo, maximum amount of bioactive $GA_1$ was recorded for $(NH_4)_2SO_4$, while maximum amount of bioactive $GA_1$ in cv. Dongjinbyeo was observed in $NH_4NO_3$ applied treatments. In both rice cultivars, $KNO_3$ applied rice plants contained least $GA_1$ contents. Also, $GA_{19}$ was the most abundant GA found in rice seedlings whereas $GA_4$ was absent at seedling stage. Our study indicated that different rice cultivars showed different responses for the same fertilizer depending upon the response potential of each cultivar and the pertinent physiological responses to changes of endogenous GAs in rice cultivars, which were comparatively lesser in magnitude.

• Horticultural Science & Technology
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• v.29 no.4
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• pp.279-287
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• 2011

This research surveyed the effect of endogenous gibberellins (GA), abscisic acid (ABA), jasmonic acid (JA) and sugar contents on bulb development and secondary growth in the southern type of garlic (Allium sativum L.) cv. Sangdongmaneul and cv. Namdomaneul of Korea. Sangdongmaneul and Namdomaneul showed endogenouse GA, ABA, JA and sugar contents were significantly different in patterns with different cultivar. GA and JA contents of southern type of garlic reached maximum before bulb differentiation and then their contents were decreased. On the other hand, ABA contents gradually increased from bulbing (leaf sheath: 6.58-18.59 $ng{\cdot}g^{-1}$ DW) start. GA contents in Sangdongmaneul and Namdomaneul were not significantly different from each other. These results revealed that GA contents were not affected by secondary growth of garlic. While JA contents (33.0-76.16 $ng{\cdot}g^{-1}$ DW) of Namdomaneul were higher than Sandongmaneul so our results suggest that JA suppressed development of secondary growth of garlic. Total sugar contents of Sandongmaneul and Namdomaneul were not significantly different but total sugar contents were gradually increased after bulb differentiation in Sandongmaneul and Namdomaneul.

• Journal of Oriental Medical Thermology
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• v.8 no.1
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• pp.64-69
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• 2010

Purpose : This study was designed to investigate about symptoms named 'San(疝)', because almost no paper associated with San in Korea since the 1990s. Methods : Watch an overview of San with the Tonguibogam based. Results : In the Tonguibogam. according to the Zhang Ja-wha's classification. symptoms named 'San(疝)' are classified into seven kinds. As discussed in the Nephrology of Oriental Medicine, part of the Andrology, symptoms named 'San(疝)' are classified into three kinds. (1) San associated with reproductive organs. (2) San associated with pain (3) San associated with protrusion. The symptoms of San usually appears in the external genitalia and lower abdomen in both sexes can. The symptoms are called 'San(疝)' to the male and 'Ga' to the female. In the modern Obstetrics and Gynecology of Oriental Medicine. women's 'San' involves both 'San(疝)' and 'Ga'. San includes genital protrusion, but not includes vaginal hemia. It also includes genital edema, genital pruritus, genital herpes and bleeding after vaginal sex. San can be raised by many causes. The causes are damages by Coldness(傷寒), Damp-heat(濕熱), Serious distress(思慮過度) and Excessive sexual activity(房勞過多). The treatment for this symptoms is elimination of Dameum(痰飮). Jeokchwi(積聚) and Blood stasis(瘀血). Conclusion : The symptoms of San usually appears in the external genitalia and lower abdomen in both sexes can. The symptoms are called 'San(疝)' to the male and 'Ga' to the female.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2008.04a
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• pp.117-118
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.105.2-105.2
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• 2009