• 제목/요약/키워드: Lee Jang Ga

검색결과 275건 처리시간 0.038초

Fabrication and Characteristics of C(IG)(SeS)2 Absorbers by Selenization and Sulfurization

  • Son, Young-Ho;Jung, Myoung-Hyo;Choi, Seung-Hoon;Choi, Jung-Kyu;Kim, Jin-Ha;Lee, Dong-Min;Park, Joong-Jin;Lee, Jang-Hee;Jung, Eui-Chun;Kim, Jung-Hun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.361-361
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    • 2011
  • Cu(InGa)(SeS2) (CIGS) thin film solar cells have recently reached an efficiency of 20%. Recent studies suggest a double graded band gap structure of the CIGS absorber layer to be a key issue in the production of high efficiency thin film solar cell using by sputtering process method. In this study, Cu(InGa)(SeS2) absorbers were manufactured by selenization and surfulization, we have deposited CIG precusor by sputtering and Se layer by evaporation before selenization. The objective of this study is to find out surfulization effects to improve Voc and to compare with non-surfulization Cu(InGa)Se2 absorbers. Even if we didn't analysis Ga depth profile of Cu(InGa)(SeS2) absorbers, we confirmed increasing of Eg and Voc through surlization process. In non-surfulization Cu(InGa)Se2 absorbers, Eg and Voc are 0.96eV and 0.48V. Whereas Eg and Voc of Cu(InGa)(SeS2) absorbers are 1.16eV and 0.57V. And the efficiency of 9.58% was achieved on 0.57cm2 sized SLG substrate. In this study, we will be discussed to improve Eg and Voc through surfulization and the other method without H2S. gas.

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HVPE를 이용하여 r-plane 사파이어 위에 multi-step으로 성장시킨 a-plane GaN 에피층의 특성 연구 (Multi-step growth of a-plane GaN epitaxial layer on r-plane sapphire substrate by HVPE method)

  • 이원준;박미선;장연숙;이원재;하주형;최영준;이혜용;김홍승
    • 한국결정성장학회지
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    • 제26권3호
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    • pp.89-94
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    • 2016
  • 본 연구에서는 HVPE(Hydride Vapor Phase Epitaxy)를 이용하여 각각 다른 V/III ratio를 가지는 multi-step의 성장 시간 변화에 따라 r-plane 사파이어 위에 성장되는 a-plane GaN 에피층의 결정성에 대하여 연구하였다. 또한 이번 연구의 결과를 선행 연구에서 single-step으로 r-plane 사파이어 위에 성장시킨 a-GaN 에피층의 결과와 비교하였다. Multi-step으로 r-plane 사파이어 위에 a-plane GaN 에피층을 성장시켰을 때, source HCl의 유량과 성장 시간이 증가함에 따라 a-plane GaN 에피층에 대한 rocking curve의 FWHM(Full Width at Half Maximum) 값이 감소하였다. 높은 source HCl의 유량을 갖는 first step과 second step의 성장 시간과 source HCl의 유량이 증가할수록 a-plane GaN 에피층 내부의 void가 감소하였다. 결과적으로 first step과 second step의 성장 시간이 가장 긴 조건에서 성장된 a-plane GaN 에피층이 가장 낮은 FWHM 값인 584 arcsec을 가지며, azimuth angle의 의존도가 가장 적은 것으로 확인되었다.

장원소(張元素)의 생규(生涯)와 의학사상(醫學思想) (The life and medical idea of Jang Won-So)

  • 김용진;윤창열
    • 대한한의학원전학회지
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    • 제4권
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    • pp.127-157
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    • 1990
  • Geum-Won dynasty is the era which totalized the every medical attainments of before Song dynasty and appeared some medical practioners who found new medical theory based upon this, and is important time for various developments of the oriental medical theory. At this time of the era, the representative practioners are called the four noted physician of Geum-Won dynasty. Jang Won-So who influenced the formation of the theory of the four noted physcian of Geum-Won dynasty, originated new theory by joining the theory of "Nae-Gyung" with his own medical experience. The results can be summarized as follows after studying his life and idea of medicine. 1. Jang Won-So, courtesy name is Gyeol-Go, came from Yeog-Joo and it is unknown that when he was born and dead, but he lived in 11C. At 27, after failed in a Jin-Sa examination, he started medical study, and widely spreaded his medical art by healing the Yoo Wan-So's Sang-Han disease. 2. There are many Jang Won-So's writings, such as "Eui-Hag-Gye-Won" which is the condensation of his idea of medicine, "Jin-Joo-Nang" which is greatly contributed to development of Herbology, "Jang-Boo-Pyo-Bon-Han-Yeol-Heo-Sil-Yong-Yag-Sig" which is the sample of Jang-Boo-Byun-Jeung-Lon-Chi, and "Yag-Joo-Nan-Gyung" "Gyeol-Go-Ga-Jin" "Gyeol-Go-Joo-Sug-Hwa-Mag-Gyeol" "Gyeol-Go-Bon-Cho" "San-Yog-Bo-Sang-Bang" which are known do not existing. 3. Jang Won-So's study about Jang-Boo-Byun-Jeung was influenced by "Nae-Gyung" "Jung-Jang-Gyung" "So-A-Yag-Jeung-Jig-Gyeol" etc. and outline by Han-Yeol-Heo-Sil and the change and prognosis of the state of disease can be decided by Saeng-Sa-Yeog-Soon, so he contribute to development of lang-Boo-Byun-Jeung-Lon-Chi of posterity. 4. Jang Won-So succeeded and develope the theory of the herbs of Oh-Jang-Go-Yog-Bo-Sa and about Ki-Mi-Seung-Gang-Boo-Chim etc. appeared on "Nae-Gyung", especially invented such as Kwi-Gyung-Lon, In-Gyeung-Bo-Sa-Seol, Jang Boo-Pyo-Bon-Yag-Sig and he enriched the content of pharmacological theory, so he motivated various development of herbalogical theory. 5. Jang Won-So's idea of On-Yang-Bi-Wi directly influence Lee Go's assertion of Bi-Wi-Lon, idea of Go-Geum-I-Gue-Seol presented theological basis of posterior medical practioners formation of prescription, so the way of drug usage greatly developed. 6. Jang Won-So's theory of the lang-Boo-Byun-Jeung and herbology directly influenced to Lee Go, Wang Ho-Go, Na Chen-Ik, lang Byeok etc. so he became the father of Yeog-Soo class and indirectly influenced to Seol Gi, Jo Hen-Ga, lang Gae-Bin, Lee Jung-Jae etc. of Myeng dynasty, so the On-Bo class has been formed. Like this, because, his idea of medicine developed at various aspect and greatly influenced to posterity, Lee Si-Jin said "Since the emergency of "Nae-Gyung", Jang Won-So is the only man who greatly enhance medical principle.", so it is clear that this is not unfounded expression at all.

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고밀도 평판형 유도결합 $BCl_3/CF_4$ 플라즈마에 의한 GaAs 계열반도체의 선택적 식각에 관한 연구 (Study of Selective Etching of GaAs-based Semiconductors using High Density Planar Inductively Coupled $BCl_3/CF_4$ Plasmas)

  • 최충기;박민영;장수욱;유승열;이제원;송한정;전민현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.46-47
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    • 2005
  • 이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

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ETRI 0.25μm GaN MMIC 공정 및 X-대역 전력증폭기 MMIC (ETRI 0.25μm GaN MMIC Process and X-Band Power Amplifier MMIC)

  • 이상흥;김성일;안호균;이종민;강동민;김동영;김해천;민병규;윤형섭;조규준;장유진;이기준;임종원
    • 한국전자파학회논문지
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    • 제28권1호
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    • pp.1-9
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    • 2017
  • 본 논문에서는 한국전자통신연구원(ETRI)에서 구축한 $0.25{\mu}m$ GaN MMIC 공정 및 소자특성을 소개하고, 이를 이용한 X-대역 3 W GaN 전력증폭기 MMIC 설계 제작 결과를 논의한다. X-대역 동작에 적합한 GaN HEMT 소자를 선정하여 GaN 전력증폭기 MMIC를 1단으로 설계하고 제작하였으며, 이를 통하여 ETRI $0.25{\mu}m$ GaN MMIC 공정 및 특성을 평가하고 분석하였다. X-대역 GaN 전력증폭기 MMIC 제작 결과, 출력전력 3.5 W, 이득 10 dB 및 전력부가효율 35 % 특성을 얻었다.

금원사대가(金元四大家)의 해수(咳嗽)에 대한 문헌적 고찰 (Literature Study on Cough of Kum-won Sa Dae Ga)

  • 손지우;신조영;정헌영;이시형
    • 동의생리병리학회지
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    • 제20권6호
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    • pp.1392-1417
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    • 2006
  • ‘Cough' can be developed by many causes and the first representative symptom for respiratory diseases which was first referenced in ${\ll}$So Mun${\cdot}$Hae Ron${\gg}$ (素問)${\cdot}$(咳論) and repeated in many medical books to date. Among those medical books, four representative men, Kum Won sa dae ga(金元四大家)- Yoo wan so(劉完素), Jang jong jung(張從政), Lee dong won(李東垣) and Ju jin hyeong(侏震亨), presented new ideas and opinions on rules of occurrence and transformation in disease due to prevalence of wars and febrile communicable diseases during the Kum-Won period(金元時代). I have concluded the following while researching the books of Kum Won sa dae ga(金元四大家).