• 대한전자공학회논문지SD
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• 제39권12호
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• pp.1001-1007
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• 2002

된 논문에서는 펜타센을 활성층으로 사용하는 유기박막트랜지스터(OTFT)의 펜타센의 두께, 그리고 소오스 및 드레인 전극의 위치에 따른 소자의 성능 변화에 대하여 연구하였다. 펜타센 박막의 두께가 증가하면 그레인 상태가 박막상태에서 벌크상태로 변화하면서 결정도가 악화되어 성능이 열화하였고, 소오스와 드레인 전극을 펜타센 위에 제작한 소자의 경우 접촉저항은 감소하였으나 누설전류가 증가하여 전류 점멸비가 감소하였다. 그러므로, 펜타센의 두께는, 300Å∼700Å 내외, 그리고 전극은 펜타센 아래에 위치하는 것이 적합한 것으로 확인되었다.

• 대한전자공학회논문지SD
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• 제39권4호
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• pp.1-9
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• 2002

DRAM에서 셀 파라메터들의 확률 분포를 고려하여 데이터 보유 시간에 대한 분포 특성을 계산하였다. 셀 파라메터와 셀 내부 전압의 과도 특성으로부터 데이터 보유 시간의 식을 유도하였다. 접합 공핍 영역에서 발생하는 누설 전류의 분포 특성은 재결합 트랩의 에너지 분포로, 셀 캐패시턴스 분포 특성은 유전체 성장에서 표면 반응 에너지의 분포 특성으로, 그리고 sense amplifer의 감도를 각각의 독립적인 확률 변수로 보고, monte carlo 시뮬레이션을 이용하여, 셀 파라메터 값들의 확률적 분포와, DRAM 셀들의 데이터 보유 시간에 대하여cumulative failure bit의 분포함수를 계산하였다 특히 sense amplifier의 감도 특성이 데이터 보유 시간 분포의 tail bit에 상당히 영향을 미침을 보였다.

• 전자공학회논문지D
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• 제34D권4호
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• pp.106-112
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• 1997

We demonstrate a novel wavelength -division add/drop multiplexer employing fiber bragg gratings and polarization beam splitters. the multiplexer is easy to fbricate without any special technique such as UV trimming, and yet shows very stable performance with less than 0.3-dB crosstalk power penalty in a 0.8-nm-spaced, 2.5Gbps-per-channel WDM transmission system. We find that the rejection of adjacent channels is more than -6dB, and the signal leakage through output port is less than -34dB.

• 대한전자공학회논문지SD
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• 제47권7호
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• pp.1-7
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• 2010

Fin 폭이 다른 accumulation-mode Pi-gate p-채널 MOSFET의 고온특성을 측정 분석하였다. 사용된 소자는 Fin 높이는 10nm 이며 폭은 30nm, 40nm, 50nm 의 3종류이다. 온도에 따라서 드레인 전류, 문턱전압, subthreshold swing, 유효이동도 및 누설 전류 특성을 측정하였다. 온도가 증가할수록 드레인 전류는 상온에서 보다 약간 증가하는 현상이 나타났다. 온도에 따른 문턱전압의 변화는 inversion-mode 소자 보다 작은 것으로 측정되었다. 유효이동도는 온도가 증가할수록 감소하였으나 Fin 폭이 감소할수록 이동도는 큰 것을 알 수 있었다.

• 동력기계공학회지
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• 제18권1호
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• pp.84-90
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• 2014

The high pressure hoses are widely used for the vehicles, aircraft, and overall industries. The hose assembly is generally composed of a nipple, a socket and a hose with reinforcement layers to increase the tensile strength. To produce the hose assembly, crimping or swaging process is usually used to clamp its components to ensure the prevention of fluid leakage. Crimping is a cold-working technique to form a strong bond between the workpiece and a non-metallic component. The crimping stroke is a primary parameter to be determined in the metalworking process, and it plays an important role in hose performance. This study aims at investigating the optimal crimping stroke according to the size of aircraft high pressure hose by using MSC/MARC. It is supposed that the results can be useful to get the information about the crimping stroke in manufacturing process, even with the different size of a hose.

• 전자공학회논문지A
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• 제32A권8호
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• pp.78-85
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• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.76-82
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• 2003

The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

• 한국의류산업학회지
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• 제11권3호
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• pp.437-444
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• 2009

According to the activation of the fashion electronic commerce, this research investigated the merits and demerits and improvement plan of the 3D virtual try-on technology using the qualitative research method. This research was performed by interview with 70 evaluation group. The evaluation group of 3D virtual try-on was organized and the fit evaluation process by 3D human body scan and the 3D virtual try-on of the i-Fashion technology center were experienced. This study was performed by interview after the actual and virtual try-on about the casual shirt. The convenience and accuracy of measurement, usability in online shopping, body evaluation, complement of sizing system, and body shape management were discovered as merits. The requirement of high accuracy in sizing and avatar, limits of fabric expression, practical limitation by cost, vexatious of measurement garment, differences between real and virtual fittings, personal information leakage risk, and etc were pointed out as demerits. The mass customization, customized garment connected with medical service, humanized avatar, improved fitting report, entertainment, coordination, wardrobe manager were proposed as improvement plan.

• Journal of Information Display
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• 제10권2호
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• pp.62-67
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• 2009

To understand panel driving more accurately, the optical properties and their distributions in the LCD panel itself, excluding the backlight, were investigated by measuring the transmittance of a one-dot pixel as a function of time. First, the behavior of time-dependent transmittance was analyzed, and it was found that the off-state TFT was not in a steady state but in a transient state during the holding period. Second, the time average, max, min, and range values of the transmittance curves were examined by varying the common voltage level and gray scale. Third, the analysis of such properties was expanded to cover those of the entire panel in all the gray scales. Lastly, the relationship between their properties and distributions was also investigated along with the contour plots.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.383-386
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• 2002

This paper reports on the fluid flow simulation results of an active microvalve. The mechanical and fluidic analysis are done by finite element method. The designed structure is normally closed microvalve using buckling effect, which is consist of three separate structures; a valve seat die, an actuator die and a small piezoelectric actuator. It is confirmed that the complete laminar flow and the lowest flow leakage are strongly depend on the valve seat geometry. In addition, turbulent flow was occurs in valve outlet according to increase seat dimension, height and inlet pressure. From this, we was deducts the optimum geometry of the valve seat and diaphragm deflection that have an great influence fluid flow in microvalve. Thus, it is expected that our simulation results would be apply for constructing integrated chemical analyzing system or drug delivery system.