• The Korean Journal of Ceramics
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• 제6권2호
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• 한국재료학회지
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• 제4권4호
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• pp.401-405
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• 1994

Laser ablation기술에 의해 Pt와 $YBa_Cu_3O_{7-x}$(YBCO)전극위에 epitaxially성장된 BST박막의 조성과 전기적 특성이 연구되었다. RBS분석으로부터 Pt전극 위에 증착된 BST박막의 결정성이 YBCO전극 위에 증착된 것보다도 더 우수하였다. $600^{\circ}C$에서 Pt 전극위에 증착된 BST박막은 100kHz의 주파수에서 유전상수가 320, 유전손실이 0.023이었다. Pt전극위에 증착된 BST박막의 누설전류 밀도가 TBCO전극위에 증착된 것 보다도 더 작았다. 0.15MV/cm의 전기장 하에서 누설전류밀도는 약 0.8 $\mu \; A/ \textrm{cm}^2$이었다.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.34-37
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• 2003

[ $HfO_2$ ] and $HfO_xN_y$ films were deposited by plasma-enhanced chemical vapor deposition using $Hf[OC(CH_3)_3]_4$ as the precursor in the absence of $O_2$. The crystallization temperature of the $HfO_xN_y$ films is higher than that of the $HfO_2$ film. Nitrogen incorporation in $HfO_xN_y$ was confirmed by auger electron spectroscopy analysis. After post deposition annealing (PDA) at 800$\Box$, the EOT increased from 1.34 to 1.6 nm in the $HfO_2$ thin films, whereas the increase of EOT was suppressed to less than 0.02 nm in the $HfO_xN_y$. The leakage current density decreased from 0.18 to 0.012 $A/cm^2$ with increasing PDA temperature in the $HfO_2$ films. But the leakage current density of $HfO_xN_y$ does not vary with increasing PDA temperature because an amorphous $HfO_xN_y$ films suppresses the diffusion of oxygen through the gate dielectric.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1352-1354
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• 1998

$LiNbO_3$ transistor showed relatively stable characteristic, low interface trap density, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$ thin films grown directly on p-type Si(100) substrates by 13.56 MHz rf magnetron sputtering system for FRAM applications. To take advantage of low temperature requirement for growing films, we deposited $LiNbO_3$ films lower than $300 ^{\circ}C$. RTA(Rapid Thermal Anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60 sec. We learned from X-ray diffraction that the RTA annealed films were changed from amorphous to poly-crystalline $LiNbO_3$ which exhibited (012), (015), and (022) orientations. The I-V characteristics of $LiNbO_3$ films before and after anneal treatment showed that RTA improved the leakage current of films. The leakage current density of films decreased from $10^{-5}$ to $10^{-7} A/cm^2$ at room temperature measurement. Breakdown electric field of the films exhibited higher than 500 kV/cm. The C-V curves showed the clockwise hysteresis represents ferroelectric switching characteristics. From C-V curves, we calculated dielectric constant of thin film $LiNbO_3$ as 27.5 which is close to that of bulk value.

• Journal of international Conference on Electrical Machines and Systems
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• 제1권4호
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• pp.505-508
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• 2012

A permanent magnet flux switching (PMFS) machine has a simple rotor, whilst both magnets and coils are set in the stator, resulting in easy removal of heat due to both copper loss and eddy current loss in magnets. However, the volume of magnets used in PMFS machines is usually larger than in conventional PM machines, and leakage flux does exist at the non-airgap side. To make full use of the magnets and gain higher power density, a novel 3-dimensional (3D) field PMFS machine is developed. It combines merits of the tubular linear machine, external-rotor rotary machine and axial-flux rotary machine, hence, offers high power density and peak torque capability, as well as efficient utility of magnets owing to the unique configuration of triple airgap fields.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.327.1-327.1
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• 2016

모바일 기기의 폭발적 증가세로 인해 플래시 메모리의 수요가 증가하고 있다. 낸드 플래시 메모리는 적은 전력 소모량과 높은 전기적 효율 때문에 많은 많은 연구가 이루어지고 있다. 반면에 stress-induced leakage current, positive-charge-assisted tunneling, thermally-assisted tunneling 등의 문제로 신뢰성이 저하되는 문제가 발생한다. 프로그램/이레이즈 동작이 반복되면 소자에서 발생하는 에러의 발생비율이 늘어나 신뢰성이 저하되게 된다. 비록 신뢰성 저하 메커니즘에 대한 연구가 많이 이루어졌으나, 워드라인 스트레스에 의한 프로그램 특성 저하에 대한 구체적인 연구가 진행되지 않았다. 본 연구에서는 플래시 메모리의 워드라인 스트레스로 인한 전기적 특성 감소 현상을 보기 위해, 플로팅 게이트의 두께를 변화시키면서, electron density와 depletion region 의 변화를 관찰하였다. 낸드 플래시 메모리의 전기적 특성을 멀티 오리엔테이션 모델을 포함한 3차원 TCAD 시뮬레이션을 이용하여 계산하였다. 프로그램/이레이즈 동작이 증가함에 따라, 플로팅 게이트에 공핍영역이 생기고, 블로킹 옥사이드와 게이트 사이에 의도하지 않은 트랩이 생기게 된다. 이로 인해 프로그램/이레이즈 동작이 증가함에 따라, 플로팅 게이트의 electron density가 감소하는 경향을 보았다. 이 연구 결과는 낸드 플래시 메모리 소자에서 신뢰성을 향상시키고 프로그램 특성을 증진시키는데 도움이 된다.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.896-901
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• 2005

The microstructure and electrical properties of praseodymium-based zinc oxide varistors were investigated at various cobalt oxide contents in the range of $0.5{\~}5.0 mol\%$. The ceramic density increased in the range of $5.25{\~}5.55 g/cm^3$ with increasing cobalt oxide content. The varistor doped with cobalt oxide of $1.0 mol\%$ exhibited the highest nonlinearity, with 66.6 in nonlinear exponent and 1.2 $\mu$A in leakage current. The donor concentration, density of interface states, and tamer height were in the range of $(1.06{\~}1.69){\times}10^{18}/cm^3$, $(3.11 {\~}3.56){\times}10^{12}/cm^2$, and 0.80${\~}$1.07 eV, respectively.

• 전자공학회논문지A
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• 제33A권12호
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• pp.59-64
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• 1996

InSb MIS devices prepared by remote PECVD SiO$_{2}$ were fabricated. The SiO$_{2}$ films on InSb were deposited at atemperature range of 67~190$^{\circ}$C. The effects of deposition temperature on the structural characteristics of the SiO$_{2}$ films evaluated Auger electron spectroscopy showed that atomic raito of silicon to oxygen was 0.5 and composition toms were distributed uniformaly throuout the oxide film. The transition region is about 100$\AA$ for SiO$_{2}$/InSb interface. The leakage current density at 1MV/cm and the breakdownelectric field of the MiS device using SiO$_{2}$ film deposited at 105$^{\circ}$C were about 22 nA/cm$^{2}$ and 3.5MV/cm, respectively. The interface-state density at mid-bandgap extracted from 1 MHz high frequency C-V measurement was about 2X10$^{11}$ cm$^{-2}$eV$^{-1}$.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 2003년도 추계학술대회
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• pp.335-343
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• 2003

In the electrode fabrication of unit cell, it was ascertained that electrochemical characteristics were greatly increased with 90 wt.% of BP-20, 5 wt.% of Super P and 5 wt.% of mixed binder [P(VdF-co-HFP) : PVP =7 : 3] The self-discharge of unit cell showed that diffusion process was controlled by the ion concentration difference of initial electrolyte due to the characteristics of Electric Double Layer Capacitor (EDLC) charged by ion adsorption in the beginning, but this by current leakage through the double-layer at the electrode/electrolyte interface had a minor effect and voltages of curves were remained constant regardless of electrode material. The electrochemical characteristics of 2.3 V/3,000 F grade EDLC were as follows: 0.35 m of DC-ESR (100 A discharge), 0.14 mof AC-ESR (AC amplitude 100 mV), 2.80 Wh/kg (3.73 Wh/L) of energy density and 4.64 kW /kg (6.19 kW/L) of power density. Power output was compatible with electric vehicle applications, uninterrupted power supply and engine starter, in due consideration of Ragone relations.

• 멤브레인
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• 제4권3호
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• pp.163-170
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• 1994

본 연구에서는 전기투석법을 이용하여 아미노산 수용액중에 존재하는 전해질인 무기염의 분리 정제에 관하여 고찰하였다. 생물 분리기술로서 아미노산의 등전위점을 이용한 전기투석법의 적합성을 검토하기 위하여 음이온교환막, NEOSEPTA AM1(Tokuyama Soda Co. Ltd., Japan)과 양이온교환막 CM1 (Tokuyama Soda Co. Ltd., Japan)막을 사용한 전기투석조를 설계하였고 아미노산 발효공정과 유사한 계를 만들어서 무기염인 NaCl의 분리실험을 하였다. 즉, 운전조건을 설정하기 위해 pH에 따른 아미노산의 누설량, 한계전류 밀도를 측정한 후, 이를 바탕으로 회분식과 연속식 실험으로 염의 제거량과 아미노산의 누설량을 정량적으로 고찰하고 전류효율을 구하였다. 회분식 장치에서 아미노산 수용액별로 11시간동안 운전한 결과 NaCl의 제거효율은 96.1~96.2%이었고, 아미노산의 누설율은 glycine의 경우 2.5%, methionine의 경우 1.7%, alanine의 겨우 2.0%이었으며, 전류효율은 44.5~44.6% 범위이었다. 연속식 장치에서는 아미노산 수용액별로 dilution rate을 1.0~3.9$h^{-1}$로 변화시켜 실험한 결과, 120~150분 사이에 정상상태에 도달하였고, 유속이 작을수록 염의 제거 효율은 증가하였으나 전류효율은 감소하였다. 이때 아미노산의 누설은 거의 없었다.