• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.31-35
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• 2000

The stress state developed in a thin adhesive layer bonded between the semiconductor chip and the leadframe and subjected to a shear loading is investigated. The boundary element method (BEM) is employed to investigate the behavior of interface stresses. Within the context of a linear elastic theory, a stress singularity of type $\gamma^{\lambda=1}$(0<1<1) exists at the point where the interface between one of the rigid adherends and the adhesive layer intersects the free surface. Such singularity might lead to edge crack or delamination.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.80-83
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• 2003

본 연구에서는 고온 솔더 범프와 저온 솔더 패드를 이용하여 $140^{\circ}C$에서 1분간의 리플로 공정을 통해 접합에 성공하였다. 고온 솔더 범프로 Sn-4.0Ag-0.5Cu 솔더 볼을 사용하였고, 저온 솔더는 In-48Sn $(mp:\;117^{\circ}C)$ 솔더를 기판에 evaporation 방법으로 두께 $20\;{\mu}m$의 패드 형태로 증착하였다. $140^{\circ}C$에서 1분간의 리플로 공정을 통해 칩과 기판을 접합하였으며, 접합 단면을 관찰해 본 결과 저온 솔더가 녹아 고온 솔더에 wetting된 것을 관찰하였다. 이 시편을 상온에서 시효처리를 실시한 결과 시간의 경과에 따라 저온 솔더와 고온 솔더가 상호 확산하여 약 $40\;{\mu}m$였던 확산층의 범위가 점차 증가하는 것을 관찰할 수 있었다. 또한, 리플로 공정변수에 따른 솔더의 미세구조 변화 및 ball shear strength등의 기계적 특성에 대해 고찰하였다.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.217-220
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• 2009

Conductive adhesives have been investigated for use in microelectronics packaging as a lead-free solder substitute due to their advantages, such as low bonding temperature. However, high resistivity and poor mechanical behavior may be the limiting factors for the development of conductive adhesives. The metal fillers and the polymer resins provide electrical and mechanical interconnections between surface mount device components and a substrate. As metal fillers used in conductive adhesives, silver is the most commonly used due to its high conductivity and the stability. However the cost of conductive adhesives with silver fillers is much higher than usual lead-free solders and silver has poor electro-migration performance. So, copper can be a promising candidate for conductive filler metal due to its low resistivity and low cost, but oxidation causes this metal to lose its conductivity. In this study, electrically conductive adhesives (ECAs) using surface modified copper fillers were developed. Especially, in order to overcome the problem associated with the oxidation of copper, copper particles were coated with silver, and the silver-coated copper was tested as a filler metal. Especially the effect of silver coating on the electrical resistance just after curing and after aging was investigated. As a result, it was found that the electrical resistance of ECA with silver-coated copper filler was clearly lower and more stable than that of ECA with pure copper filler after curing process. And, during high temperature storage test, the degradation rate of electrical resistance for ECA with silver coated copper filler was quite slower than that for ECA with pure copper filler.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.165-166
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• 2002

Hydrogen free diamond like carbon (DLC) films were prepared on steel substrates by using a single ion beam in a configuration that allowed sputtering of a graphite target and at the same time allowed to impact the substrate at a grazing angle. The DLC films so prepared have improved properties with increased disorder and with modest hardness that is slightly higher than previously reported values. We have studied the effects of $N_2^+$ ions implantation on such films. It is found that the implantations of nitrogen ions into DLC films lead to chemical modifications that allowed N atoms to be incorporated into the carbon network to produce a nitrogenated DLC. Nano-indentation experiments indicated that the nitrogenated films have consistently higher hardnesses ranging from 30 to 45GPa, which represents a considerable increase in surface hardness, compared with non-nitrogenated precursor films. The investigations by XPS and Raman spectroscopy suggests that the $N_2^+$ implanted DLCs had undergone both chemical and structural modifications through the incorporation of N atoms and the increased ratio of $sp^3/sp^2$ type bonding. The observed high hardness was therefore attributable to these structural and chemical modifications. This result has implication for the preparation of super hard wear resistant films required for tribological functions in devices.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.475-480
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• 2002

The reliability of the solder joint is affected by type and extent of the interfacial reaction between solder and substrates. Therefore, understanding of intermetallic compounds produced by soldering in electronic packaging is essential. In-based alloys have been favored bonding devices that demand low soldering temperatures. For photonic and fiber optics packaging, m-based solders have become increasingly attractive as a soldering material candidate due to its ductility. In the present work, the interfacial reactions between indium solder and bare Cu Substrate are investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy(SEM) and X-Ray Diffraction(XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu$_{11}$In$_{9}$ was observed for bare Cu substrate. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that the growth is diffusion-controlled.d.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.74-79
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• 2000

In an attempt to estimate the wetting properties of wettable metal layers by wetting balance method, an analysis of wetting curves of the coating layer was performed. Based on the analysis, wetting properties of UBM-coated Si-plate were estimated by the new wettability indices. The wetting curves of the one and both sides-coated UBM layers have the similar shape and show the similar tendency to the temperature. So the wetting property estimation of one side coating is possible with wetting balance method. For UBM of Si-chip, Cr/Cu/Au UBM is better than Ti/Ni/Au in the point of wetting time. At general reflow temperature, the wettability of high melting point solders(Sn-Sb, Sn-Ag) is better than that of few melting point ones(Sn-Bi, Sn-In).The contact angle of the one side coated plate to the solder can be calculated from the farce balance equation by measuring the static state force and the tilt angle.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.97-103
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• 2014

Among various lead-free solders, the Sn-58Bi solders have been considered as a highly promising lead-free solders because of its low melting temperature and high tensile strength. However, Sn-58Bi solder has the poor ductility. To enhance the mechanical property of Sn-58Bi solder, epoxy-enhanced Sn-58Bi solders have been studied. This study compared the microstructures and the mechanical properties of Sn-58Bi solder and Sn-58Bi epoxy solder with aging treatment. The solders ball were formed on the printed circuit board (PCB) with organic solderability preservative (OSP) surface finish, and then the joints were aged at 85, 95, 105 and $115^{\circ}C$ for up to 100, 300, 500 and 1000 hours. The shear test was conducted to evaluate the mechanical property of the solder joints. $Cu_6Sn_5$ intermetallic compound (IMC) layer grew with increasing aging time and temperature. The IMC layer for the Sn-58Bi epoxy solder was thicker than that for the Sn-58Bi solder. According to result of shear test, the shear strength of Sn-58Bi epoxy solder was higher than that of Sn-58Bi solder and the shear strength decreased with increasing aging time.

• Steel and Composite Structures
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• v.27 no.5
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• pp.577-598
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• 2018

The imperfect steel-concrete interface bonding is an important deficiency of the concrete-filled double skin tubular (CFDST) columns that led to separating concrete and steel surfaces under lateral loads and triggering buckling failure of the columns. To improve this issue, it is proposed in this study to use longitudinal and transverse steel stiffeners in CFDST columns. CFDST columns with different patterns of stiffeners embedded in the interior or exterior surfaces of the inner or outer tubes were analyzed under constant axial force and reversed cyclic loading. In the finite element modeling, the confinement effects of both inner and outer tubes on the compressive strength of concrete as well as the effect of discrete crack for concrete fracture were incorporated which give a realistic prediction of the seismic behavior of CFDST columns. Lateral strength, stiffness, ductility and energy absorption are evaluated based on the hysteresis loops. The results indicated that the stiffeners had determinant role on improving pinching behavior resulting from the outer tube's local buckling and opening/closing of the major tensile crack of concrete. The lateral strength, initial stiffness and energy absorption capacity of longitudinally stiffened columns with fixed-free end condition were increased by as much as 17%, 20% and 70%, respectively. The energy dissipation was accentuated up to 107% for fixed-guided end condition. The use of transverse stiffeners at the base of columns increased energy dissipation up to 35%. Axial load ratio, hollow ratio and concrete strength affecting the initial stiffness and lateral strength, had negligible effect of the energy dissipation of the columns. It was also found that the longitudinal stiffeners and transverse stiffeners have, respectively, negative and positive effects on ductility of CFDST columns. The conclusions, drawn from this study, can in turn, lead to the suggestion of some guidelines for the design of CFDST columns.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.54-56
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• 2005

Ultrasonic soldering using of Si-wafer to FR-4 PCB atroom temperature was investigated. Sn3.5Ag foil rolled $100{\mu}m$ was used for solder. The UBM of Si-die was Cu/ Ni/ Al from top to bottom and its thickness was $0.4{\mu}m$, $0.4{\mu}m$, $0.3{\mu}m$ respectively. Pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom and its thickness was $0.05{\mu}m$, $5{\mu}m$, $18{\mu}m$ respectively. The ultrasonic soldering time was changed from 0.5sec to 3.0sec and its power 1400W. As experimental result, reliable bond joint by ultrasonic at room temperature was obtained. The shear strength increased with soldering time up to 2.5 sec. That means at 2.5sec, the shear strength showed maximum rate of 65.23N. The strength decreased to 33.90N at 3.0 sec because the cracks generated along the intermetallic compound between Si-wafer and Sn-3.5mass%Ag solder. intermetallic compound produced by ultrasonic between the solder and the Si-die was $(Cu, Ni)_{6}Sn_{5}$ and the intermetallic compound between solder and pad on FR-4 was $(Ni, Cu)_{3}Sn_{4}$.