• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.95-96
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• 2000

The effect of $Al_2O_3$ on the dielectric constant and the coefficient of thermal expansion of lead borosilicate glasses for the application of PDP glass paste was investigated. Measurements were made theoretically by using empirical equations on the composition of the of glasses in which the $PbO/Al_2O_3$, $B_2O_3/Al_2O_3$ and $SiO_2/Al_2O_3$ ratios were systematically varied. As a result, with increasing $PbO/Al_2O_3$ the thermal expansion coefficient and the dielectric constant noticeably increased, while the change of $B_2O_3/Al_2O_3$ and $SiO_2/Al_2O_3$ ratios did not affect those properties of the glasses.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.79-83
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• 1998

Plasma display panel is a potential candidate for HDTV, due to the fact hat the expansion of screen size is much easier using thick film technology. In this study, transparent dielectric materials using lead borosilicate glasses is developed, which satisfy the requirements of dielectrics for PDP. Paste is made of this glass composition. The paste has thixotropic behavior suitable for screen printing. The paste shows more thixotropic behavior as the particle size decrease. After firing, cross sectional area was analyzed by SEM. The void of fired thick film was removed using bimodal particle system. The dielectric showed good adhesion characteristics.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.974-978
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• 1993

Glass viscosity effects on the electrical properties and microstructure of RuO2 based thick film resistors (TFR) using alumina modified lead borosilicate glasses were studied. AT 85$0^{\circ}C$, the glass viscosities were increased from 4.24Pa.s to 51.5Pa.s when the alumina was added from none to 14 weight percent to the standard glass of 63% PbO, 25% B2O3 and 12% SiO2. The resistivities of resistors were generally decreased and the microstructure development was retarded as the viscosity of the glass increased. This is contrary to the generally accepted thought that the low resistivity is due to fast microstructure development kinetics in TFR. Even though the glass viscosity retards the microstructure development kinetics, the overall network formations are favored for higher viscosity of glass, such that the sheet resistivities were decreased as the glass viscosity increased.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.84-90
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• 1992

The dependence of electrical characteristics of RuO$_2$-based thick film resistors on the RuO$_2$ contents, glass composition variation and the firing temperatures was measured. The sheet resistance of resistors decreased as the contents of RuO$_2$ increased and at firing temperatures higher than C, the sheet resistance increased as the firing temperature increased. In case of using lead borosilicate glass-containing $Bi_{2}O_{3}$, the sheet resistance decreased as the contents of $Bi_{2}O_{3}$ increased. TCR changes from negative to positive values as RuO$_2$ contents increased and from positive to negative values as the firing temperature increased. TCR increased to positive values as $Bi_{2}O_{3}$ increased in the glass.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.24-24
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• 1998

반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.