• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.668-671
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• 2001

The Sr$\_$0.8/Si$\_$2.4/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing post-annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of 750[$^{\circ}C$] is 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ at 100[kV/cm]. The fatigue characteristics of SBT thin films did not change up to 10$\^$10/ switching cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.5-8
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_{2}O_{9}(SBT)$ thin films are deposited on Pt-coated electrode$(Pt/TiO_{2}/SiO_{2}/Si)$ using RF magnetron sputtering method. With increasing annealing tempera ture from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The dielectric constant is 213 at annealing temperature of $750[^{\circ}C]$ and dielectric loss have a stable value within 0.1. Leakage current density is $1.01{\times}10^{-8} A/cm^{2}$ at annealing temperature of $750[^{\circ}C]$ The fatigue characteristics of SBT thin films did not change up to $10^{10}$ switching cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.166-169
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• 2006

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNT) thin films were prepared on $Pt(111)/Ti/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_3$, $Nd(TMHD)_3$ and $Ti(O^iPr)_2(TMHD)_2$ were used as the precursors and were dissolved in n-butyl acetate. The BNT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNT thin film was $31.67\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• Journal of the Semiconductor & Display Technology
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• v.7 no.3
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• pp.17-21
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• 2008

Application of flash memory in mobile and ubiquitous related devices is rapidly being increased due to its low price and high performance. In addition, some notebook computers currently come out into market with a SSD(Solid State Disk) instead of hard-drive based storage system. Regarding this trend, applications need to increase the storage capacity using multiple flash memory chips for larger capacity sooner or later. Flash memory based storage subsystem should resolve the performance bottleneck for writing in perspective of speed and lifetime according to its physical property. In order to make flash memory storage work with tangible performance, reclaiming of invalid regions needs to be controlled in a particular manner to decrease the number of erasures and to distribute the erasures uniformly over the whole memory space as much as possible. In this paper, we study the performance of flash memory recycling algorithms and demonstrate that the proposed algorithm shows acceptable performance for flash memory storage with multiple chips. The proposed cleaning method partitions the memory space into candidate memory regions, to be reclaimed as free, by utilizing threshold values. The proposed algorithm handles the storage system in multi-layered style. The impact of the proposed policies is evaluated through a number of experiments.

• Macromolecular Research
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• v.14 no.2
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• pp.187-193
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• 2006

Organoclay, was applied as a filler, in place of carbon black and silica, to a natural rubber (NR)/butadiene rubber (BR) blend. A compounding method was used to disperse and separate the layered silicates. The effect of a coupling agent on the vulcanizates was evaluated using both the silica and organoclay filled compounds. After the compounding processes were completed, the XRD diffraction peaks disappeared, but then reappeared after vulcanization. The scorch times for the organoclay-filled compounds were very short compared to those for carbon black and silica-filled compounds. The organoclay-filled compounds showed high values of tensile strength, modulus, tear energy, and elongation at the break. When ranked by viscosity, the compounds appeared in the following order: silica > silica (Si-69) > organoclay > organoclay (Si-69) > carbon black. Fractional hysteresis, tensile set, and wear rates were very consistent with the viscosity of the vulcanizates. The Si 69 coupling agent increased reversion resistance, the maximum torque values in the ODR, modulus, and wear resistance, but decreased elongation at the break, fractional hysteresis, and tension set of the vulcanizates.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.47-49
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• 2017

Photocurrent enhancement has been investigated in monolayer (1L) $MoS_2$ with PbS quantum dots (QDs). A metal-semiconductor-metal (Au-1L $MoS_2$-Au) junction device is fabricated using a standard photolithography method. Considerably improved photo-electrical properties are obtained by coating PbS QDs on the Au-1L $MoS_2$-Au device. Time dependent photoconductivity and current-voltage characteristics are investigated. For the QDs-coated $MoS_2$ device, it is observed that the photocurrent is considerably enhanced and the decay life time becomes longer. We propose that carriers in QDs are excited and transferred to the $MoS_2$ channel under light illumination, improving the photocurrent of the 1L $MoS_2$ channel. Our experimental findings suggest that two-dimensional layered semiconductor materials combined with QDs could be used as building blocks for highly-sensitive optoelectronic detectors including radiation sensors.

• Computers and Concrete
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• v.8 no.1
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• pp.71-96
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• 2011

Existing reinforced concrete (RC) beams can be strengthened with externally bolted steel plates to the sides of beams. The effectiveness of this type of bolted side-plate (BSP) beam can however be affected by partial interaction between the steel plates and RC beams due to the mechanical slip of bolts. To avoid over-estimation of the flexural strength and ensure accurate prediction of the load-deformation response of the beams, the effect of partial interaction has to be properly considered. In this paper, a special non-linear macro-finite-element model that takes into account the effects of partial interaction is proposed. The RC beam and the steel plates are modelled as two different elements, interacting through discrete groups of bolts. A layered method is adopted for the formulation of the RC beam and steel plate elements, while a special non-linear model based on a kinematic hardening assumption for the bolts is used to simulate the bolt group effect. The computer program SiBAN was developed based on the proposed approach. Comparison with the available experimental results shows that SiBAN can accurately predict the partial interaction behaviour of the BSP beams. Further numerical simulations show that the interaction between the RC beam and the steel plates is greatly reduced by the formation of plastic hinges and should be considered in analyses of the strengthened beams.

• Geomechanics and Engineering
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• v.6 no.1
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• pp.79-98
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• 2014

This paper presents an experimental and numerical study on the evaluation of a thermal response test using a precast high-strength concrete (PHC) energy pile and a closed vertical system with W-type ground heat exchangers (GHEs). Field thermal response tests (TRTs) were conducted on a PHC energy pile and on a general vertical GHE installed in a multiple layered soil ground. The equivalent ground thermal conductivity was determined by using the results from TRTs. A simple analytical solution is suggested in this research to derive an equivalent ground thermal conductivity of the multilayered soils for vertically buried GHEs. The PHC energy pile and general vertical system were numerically modeled using a three dimensional finite element method to compare the results with TRTs'. Borehole thermal resistance values were also obtained from the numerical results, and they were compared with various analytical solutions. Additionally, the effect of ground thermal conductivity on the borehole thermal resistance was analyzed.