• 한국전자파학회논문지
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• 제12권6호
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• pp.1002-1008
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• 2001

본 논문은 전파흡수기능을 갖는 경량, 고강도 고분자 복합재료의 재료 설계 및 전각흡수특성에 관한 연구이다. 전송선로 이론을 도입하여 다층구조 전파흡수체의 반사감쇠량 계산에 필요한 이론식을 제시하고, 각 층의 재료정수 및 두께의 함수로 계산한 전파흡수능 결과에 근거하여 각 층의 재질에 적합한 복합재료를 제시하였다. 본 연구에서 가장 중요한 결과는 페라이트 충진재를 사용하지 않은 3층 구조 (표면층/중간층/배면층)의 전파흡수구조재를 설계하였다는 점이다. 표면층 재료로는 저유전율 특성의 유리섬유 복합재료를 사용하고, 중간층 및 배면층에는 유전상수 및 도전손실이 큰 탄소섬유 복합재료를 사용하여 4~12 GHz 주파수 범위에서 10 dB 이상의 전파흡수특성을 얻을 수 있었다. 이에 반하여 흡수층/반사층으로 구성되는 2층 구조의 전파흡수구조재에서는 흡수층에 페라이트 충진재의 사용이 필수적이었다. 반사층 재질로 탄소섬유 복합재료를 사용하고, 횹수층 유리섬유 복합재료에 페라이트 충진재를 약 40 wt% 첨가함으로써 4~12 GHz 주파수 범위에서 10 dB 이상의 전파흡수특성을 얻을 수 있었다.

• 한국세라믹학회지
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• 제45권2호
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• pp.105-111
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• 2008

Symmetric three layer composites have been prepared by freeze casting and then pressureless sintered at $l700-1800^{\circ}C$ in $N_2$ gas atmosphere. The relative sintered density of multilayer composites having microstructural characteristics of later intermediate-stage densification increased with sintering temperature and reached about 95% theoretical value at $1800^{\circ}C$. Although the indentation strength of the multilayer composites was generally reduced with increasing Vickers indentation load up to 294N, the damage resistance of multilayer composites was superior compared to monolithic layer 95AL/5SN material. The three-point bend strength of the layered materials remained at the values 266-298 MPa after indentation with a load of 49N, while that of the monolithic 95AL/5SN material was 219 MPa. The fracture toughness of the multilayer material was $5.4-6.6\;MPa\;m^{1/2}$.

• 한국세라믹학회지
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• 제46권6호
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• pp.596-601
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• 2009

Double-layered ZnO nanostructures have been synthesized by aqueous solution method on (001) plane of ZnO nanorod. A stepwise changing of aqueous solution concentration gave rise to a new nano-structured layer consisting of either multiple of nanorods or nanowires with much smaller radii than that of the ZnO nanorod on which the new layer was grown. As the first step the ZnO nanorods have been grown to have the (001) preferential orientation in the aqueous solution consisting of 0.1M zinc nitrate and 0.1 M HMT. This preferentially aligned ZnO nanorods have been regrown in either a less diluted solution of 0.01M zinc nitrate and 0.01 M HMT or a more diluted solution of 0.005M zinc nitrate and 0.01 M HMT. A new nano-layer consisting of numerous aligned nanorods or nanowires has been produced on the (001) planes of ZnO nanorods. The growth mechanism for this double layered ZnO nanostructure is ascribed to the (001) polar surface energy instability and inhibition of (001) plane growth due to the step-wise change of aqueous solution concentration; ZnO nuclei formed on the (001) plane grow preferentially in (010) plane instead of (001) plane to reduce the total surface energy. Surface area of ZnO nanostructure can be increased in orders of magnitudes by forming a new layer consisting of smaller nanorods/nanowires on (001) plane of ZnO nanorods.

• Nuclear Engineering and Technology
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• 제54권3호
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• pp.975-983
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• 2022

A four-layered W/Cu functionally graded material (FGM) (W90% + Cu10%/W80% + Cu20%/W70% + Cu30%/W60% + Cu40%, wt.% fraction) and a four-layered diamond/W-Cu FGM (W90% + Cu10%/W80% + Cu20%/W70% + Cu30%/W55% + Cu40% + diamond5%, wt.% fraction) were fabricated by microwave sintering. The thermal conductivity and thermal shock resistance of diamond/W-Cu FGM and W-Cu FGM were investigated. The morphologies of the diamond particles and different FGMs were analyzed using AFM, SEM, EDS, and TEM. The results show that a 200 nm rough tungsten coating was formed on the surface of the diamond. The density of the tungsten-coated diamond/W-Cu FGM, obtained by microwave sintering at 1200 ℃ for 30 min, was 94.66%. The thermal conductivity of the fourlayered diamond/W-Cu FGM was 220 W·m^-1·K^-1, which is higher than that of the four-layered W/Cu FGM (209 W m^-1 K^-1). This indicates that adding an appropriate amount of tungsten-coated diamond to the high Cu layer W/Cu FGM improves the thermal conductivity of the composite. The diamond/W-Cu FGM sintered at 1200 ℃ for 10 min exhibited better thermal shock resistance than diamond/W-Cu FGM sintered at 1100 ℃ for 10 min.

• 산업진흥연구
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• 제9권1호
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• pp.31-38
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• 2024

본 연구에서는 층상 실리케이트계 나노복합소재 감습막제조를 통하여 그 특성을 평가하였다. 나노복합소재 제조를 위하여 나노물질로 4급 암모늄염으로 유기화 처리된 층상 실리케이트 물질인 Cloisite^®, Bentone^®으로 선정하였다. 유기화 처리된 montmorillonite/hectorite 점토 첨가 습도센서는 RH(%)증가에 따라 임피던스는 감소하였다. Cloisite^® 습도센서의 경우 Bentone^® 38 습도센서에 비해 임피던스 직진성 및 히스테리시스는 다소 우수하였다. 임피던스는 Bentone^® 38을 첨가한 센서가 Cloisite^® 첨가형 센서와 비교해 가장 낮게 나타났다. Cloisite^® 첨가형 센서를 각각 비교하면 유기화 처리된 물질의 친수성 영향에 따라 감습 특성이 다르게 나타나는 것을 확인하였다. 응답 속도는 친수성 특징에 따라 Cloisite^® 93A가 느려지는 경향을 나타냈으며, 이 결과 역시 친수성 유기물에 의한 수분 증발 속도 차이에 의한 것으로 사료된다. 이상의 결과를 바탕으로 유기화된 층상 실리케이트계 물질을 이용한 감습막은 기존의 고분자계 감습막과 비교해 감습특성은 다소 낮게 나타났으나 공중합, 가교구조화, 등 복잡한 공정 없이 안정성이 우수하고 간단한 공정으로 감습막 제조가 가능하여 경제성이 우수한 습도센서 응용이 가능할 것으로 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.135-138
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• 2002

VCO(Voltage Controlled Oscillator) is one of the main components governing the size, performance and power consumption of telecommunication devices. As the devices become much smaller, VCO need to have much smaller size with better characteristics. Buried type passive components of L,C,R were developed previously and the structure of these components are good for minimizing the size of VCO. Our own library of passive components is used in simulation and fabrication of VCO circuit, and surface mounted components like varactor diode are analysed using the measurement circuit designed by ourselves. Two-Dimensional simulation of VCO circuit and local three-Dimensional structure simulation are performed and their relation is obtained. In structure of multi-layered VCO, some components governing the characteristics of VCO are selected and placed on the top of oscillator for the good tuning process. In resonator part, the stripline structure and low loss glass/ceramic material are used to get higher Q value. In our research, a VCO oscillates in the 2.3∼2.36 GHz band is developed.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.84.2-84.2
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• 2011

In this research, two thin film deposition techniques, Atomic Layer Deposition and Sputtering are carried out for the fabrication of Yittria Stabilized Zirconia electrolyte for thin film Solid Oxide Fuel Cell. Zirconium to Yittrium ratio for both cases is about 1/8. Scanning Electron Microscope(SEM) image shows that the growth rate per hour for Atomic Layer Deposition is faster than for sputtering. X-ray Photo-electron Spectroscopy(XPS) shows that the peaks of both Zirconia and Yittria shift towards higher bending energy for the case of Atomic Layer deposition and thus are more strongly attached to the substrate. Later, Nyquist plot was used to compare the conductivity of Yittria Stabilized Electrolyte for both cases. The conductivity at $300^{\circ}C$ for Atomic Layer Deposited Yittria Stabilized Zirconia is found to be $5{\times}10^{-4}S/cm$ while that for sputtered Yittria Stabilized Zirconia is $2{\times}10^{-5}S/cm$ at the same temperature. The reason for better performance for Atomic Layered YSZ is believed to be the Nano-structured layer fabrication that aids in along the plane conduction as compared to the columnarly structured Sputtered YSZ.

• 대한안전경영과학회지
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• 제6권4호
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• pp.155-170
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• 2004

Among the semiconductor If-chips, unlike memory chips, a majority of Application Specific IC(ASIC) products are produced by customer orders, and meeting the customer specified due date is a critical issue for the case. However, to the one who understands the nature of semiconductor manufacturing, it does not take much effort to realize the difficulty of meeting the given specific production due dates. Due to its multi-layered feature of products, to be completed, a semiconductor product(called device) enters into the fabrication manufacturing process(FAB) repeatedly as many times as the number of the product specified layers, and fabrication processes of individual layers are composed with similar but not identical unit processes. The unit process called photo-lithography is the only process where every layer must pass through. This re-entrant feature of FAB makes predicting and planning of due date of an ordered batch of devices difficult. Parallel machines problem in the photo process, which is bottleneck process, is solved with restricted roll out algorithm. Roll out algorithm is a method of solving the problem by embedding it within a dynamic programming framework. Restricted roll out algorithm Is roll out algorithm that restricted alternative states to decrease the solving time and improve the result. Results of simulation test in condition as same as real FAB facilities show the effectiveness of the developed algorithm.

• 한국표면공학회지
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• 제54권5호
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• pp.285-293
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• 2021

High-entropy TiAlCrSiN nano-composite coating was designed to improve mold life for high temperature liquid molding. Alloy design, powder fabrication and single alloying target fabrication for the high-entropy nano-composite coating were carried out. Using the single alloying target, an arc ion plating method was applied to prepare a TiAlCrSiN nano-composite coating had a 30 nm TiAlCrSiN layers are deposited layer by layer, and form about 4 ㎛-thickness of multi-layered coating. TiAlCrSiN nano-composite coating had a high hardness of about 39.9 GPa and a low coefficient of friction of less than about 0.47 in a dry environment. In addition, there was no change in the structure of the coating after the dissolution loss test in the molten metal at a temperature of about 1100 degrees.

• 한국재료학회지
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• 제28권11호
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• pp.627-632
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• 2018

Two dimensional(2D) crystals, composed of a single layer or a few atomic layers extracted from layered materials are attracting researchers' interest due to promising applications in the nanoelectromechanical systems. Worldwide researchers are preparing devices with suspended 2D materials to study their physical and electrical properties. However, during the fabrication process of 2D flakes on a target substrate, contamination occurs, which makes the measurement data less reliable. We propose a dry transfer method using poly-methyl methacrylate(PMMA) for the 2D flakes to transfer onto the targeted substrate. The PMMA is then removed from the device by an N-Methyl-2-pyrrolidone solution and a critical point dryer, which makes the suspended 2D flakes residue free. Our method provides a clean, reliable and controllable way of fabricating micrometer-sized suspended 2D nanosheets.