• International Journal of Ocean Engineering and Technology Speciallssue:Selected Papers
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• 제3권1호
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• pp.35-39
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• 2000

The present study dealt with the relationships among the interfacial shear strength, the thickness of interfacial reaction layer and the impact value of $Nb/MoSi_2$ laminate composites. In addition, the tensile test was conducted to evaluate the fracture strain of $Nb/MoSi_2$ laminate composites. To change the thickness of the reaction layer, $Nb/MoSi_2$ laminate composites alternating sintered MoSi2 layers and Nb foils were fabricated as the parameter of hot press temperature. It has been found that the growth of the reaction layer increases the interfacial shear strength and decreases the impact value by localizing a plastic deformation of Nb foil. There also exist appropriate shear strength and the thickness of the reaction layer, which are capable of maximizing the fracture energy of $Nb/MoSi_2$.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2005년도 추계학술대회논문집
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• pp.936-941
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• 2005

Apartment building floor with a damping layer can be modeled as a sandwich plate. In order to reduce low frequency noise more efficiently due to heavy impact on such a floor, thickness of the damping layer needs to be optimized at the design stage. Modal loss factors are determined in this paper by RKU equation which is popular In sandwich plate theories. Optimum damping layer thickness determined at each mode is weighted so that several modes in the frequency range of interest can be included in a more systematic way. Furthermore, to reflect frequency-dependent characteristics of complex stiffness of the damping layer, an iteration method is proposed in finding modal frequencies.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.744-746
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• 2008

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$Cu_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.85-88
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• 1998

Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator(e.g., digital clocks, meter readout) and display systems(e.g., instrument panels, TV display), the application being determined by the light -output capability and size availability(cost) of the particular device. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. Also in order to maximize even surface emission, various sieving process are introduced. Very similar phosphor particle size is selected. Luminance by various wave intensity is also investigated. 150cd/m$^2$ luminance are investigated in stable voltage and frequency.

• 전기학회논문지
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• 제62권12호
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• pp.1725-1729
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• 2013

In this paper, the modeling and simulation of infrared absorption in an infrared absorbing structure with the cascaded transmission line model were carried out. Each layer in the infrared absorbing structure can be modeled as a characteristic impedance of the cascaded transmission line model. The simulation results show that the cavity thickness to get a maximum absorption should be less than a quarter wavelength, which is somewhat different from prevalent thickness. It can be assured that the sheet resistance of an absorbing layer to get a maximum absorption is $377{\Omega}/{\square}$, that the thickness of the absorbing layer dose not affect the spectral characteristics of absorption. It is also shown that the thickness of the active layer is not critical to the IR absorption. It can also be assured that the validation of this modeling is proved in comparison with the previous results from similar absorbing structures.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.51-54
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• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 학술대회 논문집
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• pp.242-245
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• 2003

We investigated the quench characteristics of thin film type SFCLs with shunt layers of various thickness. The SFCLs ware based on 2 inch diameter YBa$_2$Cu$_3$3O$_{7}$ thin films coated in-situ with a gold shunt layer. The shunt layer thickness was varied by Ar ion milling. The limiters were tested with simulated fault currents at various source voltages. The thinner the shunt layer was, the slower was the rise of SFCL temperatures. This means SFCLs of thinner shunt layers had higher voltage ratings. The voltage rating was approximately inversely proportional to the square root of the shunt layer thickness. This result could be understood through the concept of heat balance.e.

• 제어로봇시스템학회논문지
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• 제6권1호
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• pp.8-14
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• 2000

In this paper, three adaptive sliding mode control algorithms, which self-tune both the sliding mode gain and the boundary layer thickness, are proposed. The first algorithm uses a gain adaptation rule is combined with the boundary layer thickness adaptatioin rule to satisfy the sliding condition. In the third algorithm, the computation burden of the second algorithm is reduced further, and therefore no extra cost is required for real-time implementation. Due to the mixed sliding mode gain and the boundary layer thickness adaptation scheme, the tracking error and the chattering of the control input can be reduced greatly.

• Journal of electromagnetic engineering and science
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• 제16권2호
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• pp.106-111
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• 2016

A resistive and capacitive (RC) microwave absorber with a layer thickness less than a quarter of a wavelength is investigated based on closed-form design equations, which are derived from the equivalent circuit of the RC absorber. The RC absorber is shown to have a theoretical 90% absorption bandwidth of 93% when the electrical layer thickness is $57^{\circ}$ (about ${\lambda}_0/6$). The trade-offs between the layer thickness and the absorption bandwidth are also elucidated. The presented formulation is validated by a design example at 3 GHz. The RC absorber is realized using a silver nanowire resistive rectangular structure with surrounding gaps. The measured 90% absorption bandwidth with a layer thickness of ${\lambda}_0/8$ is 76% from 2.3 GHz to 5.1 GHz in accordance with the theory and EM simulations. The presented design methodology is scalable to other frequencies.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.555-558
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• 2004

The efficiency of electron injection from the cathode is strongly dependent on the thickness of the LiF buffer-layer. We used LiF to electron Injection layer. We compared characteristics of organic light emitting device changing LiF thin film thickness from 1.0 m to 10.0 nm. Experiment result, we found that LiF thickness has the optimized electrical characteristics in 3.0 m. In this paper, we did research about electrical characteristics of organic light emitting device by LiF thickness change using method numerical analysis method. We proved adequate experimental results that compare results of numerical analysis, and come out through an experiment results is validity.