• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.322.1-322.1
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• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권1호
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• pp.39-44
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• 1999

The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.

• Tribology and Lubricants
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• 제25권1호
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• pp.20-24
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• 2009

TiC-derived carbon coatings have been synthesized at $600^{\circ}C$ temperature treatment with $H_2/Cl_2$ mixture gases. From Raman spectroscopy measurements, the modified layer was covered with carbon and the thick-ness of the layer was increased with increasing reaction time. And $I_D/I_G$ ratio was decreased with increasing reaction time. The superior tribological property was obtained from TiC reacted with $Cl_2$ gas for 2 hrs. And the tribological property measurements indicate that TiC-derived carbon layer has $0.9{\times}10_{-6}mm^3/Nm$ in wear coefficient and 0.13 in friction coefficient.

• Steel and Composite Structures
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• 제42권2호
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• pp.257-264
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• 2022

The analysis of the progressive collapse resistance of structures is a well-known issue among structural engineers. Large-span reticulated dome structures are commonly utilized in large public buildings, necessitating research into their progressive collapse resistance to assure user safety. The most significant part of improving the structural resilience of reticulated domes is to evaluate their key elements. Based on a stiffness-based evaluation approach, this work offers a calculating procedure for element importance coefficient. For both original and damaged structures, evaluations are carried out using the global stiffness matrix and the determinant. The Kiewitt, Schwedler, and Sunflower reticulated domes are investigated to explore the distribution characteristic of element importance coefficients in the single-layer dome structures. Moreover, the influences of the load levels, load distributions, geometric parameters and topological features are also discussed. The results can be regarded as the initial concept design reference for single-layer reticulated domes.

• 한국지하수토양환경학회지:지하수토양환경
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• 제9권2호
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• pp.48-53
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• 2004

본 연구는 최종복토 구조에 따른 제기물 매립지에서의 침출계수의 변화에 관한 것이다. (a)는 1999년 최종복토 설치기준이 강화되기 이전, 양질의 토사를 이용하여 50cm두께로 최종복토를 실시하는 구조이며, (b), (c)는 최종복토 설치 기준 강화로 식생대층, 배수층, 차단층((b): Geomemrane(1.5 mm)와 다짐점토층(30 cm), (c) 다짐점토층(45 cm)), 가스배제층으로 최종복토를 설치하는 구조이다. 침출수 발생량은 일반적으로 합리식에 의해 산정되며 합리식 인자중 침출계수에 의해 영향을 크게 받는다. 침출계수는 우수로 인한 침출수 발생비율로 최종복토 구조에 따라 큰 변화를 보이는 인자로서 이 연구에서는 최종복토 구조 변화에 빠른 침출계수를 산정하기 위해 HELP(Hydrologic Evaluation of Landfill Performance) Simulation과 Pilot lest를 이용하였다. HELP Simulation 결과 (a) 구조의 침출계수는 0.36∼0.42로, (b), (c)의 침출계수는 최종복토의 차단층의 설치 질에 따라 0.03∼0.15로 예측되었다. 또한 Pilot Test 결과 강화된 구조의 최종복토의 침출계수는 HELP Model결과와 유사한 0.13의 수치가 발생되었다.

• 한국도로학회논문집
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• 제18권4호
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• pp.55-61
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• 2016

PURPOSES : The objective of this study was to determine the relationship between the dielectric characteristics of asphalt mixtures and the air voids present in them using ground penetrating radar (GPR) testing. METHODS : To measure the dielectric properties of the asphalt mixtures, the reflection coefficient method and the approach based on the actual thickness of the asphalt layer were used. An air-couple-type GPR antenna with a center frequency of 1 GHz was used to measure the time for reflection from the asphalt/base layer interface. A piece of aluminum foil was placed at the interface to be able to determine the reflection time of the GPR signal with accuracy. An asphalt pavement testbed was constructed, and asphalt mixtures with different compaction numbers were tested. After the GPR tests, the asphalt samples were cored and their thicknesses and number of air voids were measured in the laboratory. RESULTS : It was found the dielectric constant of asphalt mixtures tends to decrease with an increase in the number of air voids. The dielectric constant values estimated from the reflection coefficient method exhibited a slight correlation to the number of air voids. However, the dielectric constant values measured using the approach based on the actual asphalt layer thickness were closely related to the asphalt mixture density. Based on these results, a regression equation to determine the number of air voids in asphalt mixtures using the GPR test method was proposed. CONCLUSIONS : It was concluded that the number of air voids in an asphalt mixture can be calculated based on the dielectric constant of the mixture as determined by GPR testing. It was also found that the number of air voids was exponentially related to the dielectric constant, with the coefficient of determination, $R^2$, being 0.74. These results suggest that the dielectric constant as determined by GPR testing can be used to improve the construction quality and maintenance of asphalt pavements.

• 한국산학기술학회논문지
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• 제13권12호
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• pp.5655-5660
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• 2012

본 연구의 목적은 경계층 해석법을 이용하여 고효율 열교환기 설계를 위한 이론적 접근법을 제시하고 기존 열교환기에 많이 사용되고 있는 사각 평판 핀과 이를 대체할 수 있는 원형 평판 핀에 대하여 경계층 형성과 간섭에 대하여 설명하고 속도 및 온도 경계층 성장에 따른 열전달계수의 변화를 나타내고자 한다. 더불어 한 개의 핀에서의 유동은 외부유동으로 간주할 수 있으나 다수의 핀 사이의 유동은 내부유동으로 간주하였고 이론적인 결과를 도출하였다. 결과적으로 열교환기의 고효율화 및 컴팩트화를 실현하기 위하여 경계층 간섭을 회피할 수 있는 방안을 이론적으로 제시하였고, 이러한 관점에서 원형 평판 핀이 사각 평판 핀에 비하여 열전달성능이 우수함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제16회 학술발표회 논문개요집
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• pp.182-182
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• 1999

• 한국농공학회지
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• 제29권2호
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• pp.23-29
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• 1987

This study was fulfilled by the floating lysimeter method at the experimental farm of Kon-Kuk University from August to November of 1986 to investigate the amount of evapotranspiration by the growing periods, evapotranspiration ratio, amount of watering per one time, days of intermission, soil moisture extraction pattern and crop coefficient of the Chinese cabbage cultivated in the sandy loam soil at the watering point of pF2.O. The results obtained are summarized as follows: 1.The total evapotranspiration during the growing period was 267.2mm, which was 3. 99mm by daily average, and the maximum evapotranspiration showed in the mid ten days of September with the value of 5.81mm I day. 2.The evapotranspiration ratio by the growing stages increased from the last ten days of September and showed maximum in the beginning of October, and the average evapotranspiration ratio was 1.4. 3.The days of watering intermission at the watering point of pF2.O was 2.4 days, and the average yield per plant was 3,228 g. 4. The soil moisture extraction pattern in the initial stage was 78.9 % in the 1st and 2nd soil layer and 21.1 % in the 3rd and 4th layer, and the mid-season stage, the moisture extraction proportion of the under layer accounted for 38.8 % which showed that the root elongated to the lowest soil layer. 5.The average crop coefficient(Kc) of the tested crop during the growing period was 0.67 by Penman equation and 2.36 by Pan Evaporation equation, which showed high difference by the calculation methods, and the changes of crop coefficient by the growing stages by Penman equation was favorable than those calculated by other met-hods.