• Applied Microscopy
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• v.47 no.3
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• pp.208-213
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• 2017

The microstructural changes in Co nanoparticles and an Au-10at.%Pd thin film have been investigated using an in situ heating holder with a micro-electro-mechanical system (MEMS). In Co nanoparticles, two phases (face-centered cubic and hexagonal close-packed crystal structures) were found to coexist at room temperature and microstructures at temperatures, higher than $1,000^{\circ}C$, were observed with a quick response time and significant stability. The actual temperature of each specimen was directly estimated from the changes in the lattice spacing (Bragg-peak separation). For the Au-10at.%Pd thin film, at a set temperature of $680^{\circ}C$, the actual temperature of the sample was estimated to be $1,020^{\circ}C{\pm}123^{\circ}C$. Note that the specimen temperature should be carefully evaluated because of the undesired effects, i.e., the temperature non-uniformity due to the sample design of the MEMS chip, and distortion due to thermal expansion.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.49-53
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• 2018

Recently, technologies for integrating various devices such as a flexible device, a transparent device, and a MEMS device have been developed. The key processes of heterogeneous device manufacturing technology are chip or wafer-level bonding process, substrate grinding process, and thin substrate handling process. In this study, the effect of Si substrate grinding process on the electrical properties of tin oxide thin films applied as transparent thin film transistor or flexible electrode material was investigated. As the Si substrate thickness became thinner, the Si d-spacing decreased and strains occurred in the Si lattice. Also, as the Si substrate thickness became thinner, the electric conductivity of tin oxide thin film decreased due to the lower carrier concentration. In the case of the thinner tin oxide thin film, the electrical conductivity was lower than that of the thicker tin oxide thin film and did not change much by the thickness of Si substrate.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.23 no.2
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• pp.167-175
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• 2013

The wave propagation characteristics of an acoustic metamaterial composed of periodically repeated one-dimensional Helmholtz resonator array was investigated considering the effects of dimensional changes of the resonator geometry on the transmission coefficient and band gap. The effective impedance and transmission coefficient of the acoustic metamaterials are obtained based on the acoustic transmission line method. The designed acoustic metamaterials exhibit band gaps and negative bulk modulus that are non-existent properties in the nature. The band gap of the acoustic metamaterial is strongly dependent on the geometry parameters of Helmholtz resonators and lattice spacing. Also, a new type of metamaterial that is periodically constructed with two different resonators was designed to open the local resonance band gap without change of Bragg scattering.