• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.48-53
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• 2001

The crystal structure of ZnS fabricated by gas-liquid phase reaction was refined by the Rietveld program using X-ray diffraction data. The R-weighted pattern (R$\sub$wp/) of ZnS powder was 10.85%. The fraction of HCP phase was closely related with extra amount of H$_2$S gas. The lattice parameters and crystalline size were changed by the relative ratio of multi-phase. The luminescence property of ZnS:Cu, Al green phosphors prepared by conventional methods was good in the range of 91∼94% and 150∼190${\AA}$, respectively. According to the maximum entropy electron density(MEED) methods, any defects in (001) plane of cubic phase were not found. We suggest that both the Rietveld and maximum entropy density methods may be useful tools for studying luminescence mechanism of other phosphors materials.

• Journal of the Korean Ceramic Society
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• v.36 no.11
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• pp.1198-1204
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• 1999

The effect of sintering atmosphere on the grain sizes and phase distributions in 3Y-ZrO2 and 8Y-ZrO2 was investigated O2 and N2 were used as sintering atmospheres. In the case of 3Y-ZrO2 the sintered density was higher in N2 than in O2 while in the case of 8Y-ZrO2 contrary results were obtained. The observation can be explained by the nitrogen solubility into the zirconia lattice. That is nitrogen gas can behave as a diffusive gas contrary to the behavior in other oxides depending on the amount of Y2O3. In 3Y-ZrO2 tetragonal phase was retained at room temperature irrespective of sintering atmospheres. Grain sizes of two specimens were below 2㎛ and larger in O2 thin in N2 Under a given stress the transformability of tetragonal phase into monoclinic phase was higher in O2 than N2. The results are discussed on the basis of an effect of the grain size and non-transformable ttragonal(t') phase.

• Wind and Structures
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• v.21 no.6
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• pp.625-639
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• 2015

Monopiles have been most widely used for supporting offshore wind turbines (OWTs) in shallow water areas. However, multi-member lattice-type structures such as jackets and tripods are also considered good alternatives to monopile foundations for relatively deep water areas with depth ranging from 25-50 m owing to their technical and economic feasibility. Moreover, jacket structures have been popular in the oil and gas industry for a long time. However, several unsolved technical issues still persist in the utilization of multi-member lattice-type supporting structures for OWTs; these problems include pile-soil-interaction (PSI) effects, realization of dynamically stable designs to avoid resonances, and quick and safe installation in remote areas. In this study, the effects of PSI on the dynamic properties of bottom-fixed OWTs, including monopile-, tripod- and jacket-supported OWTs, were investigated intensively. The tower and substructure were modeled using conventional beam elements with added mass, and pile foundations were modeled with beam and nonlinear spring elements. The effects of PSI on the dynamic properties of the structure were evaluated using Monte Carlo simulation considering the load amplitude, scouring depth, and the uncertainties in soil properties.

• Journal of Powder Materials
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• v.26 no.2
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• pp.126-131
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• 2019

In the present work, a new hydrogen added argon heat treatment process that prevents the formation of hydrides and eliminates the dehydrogenation step, is developed. Dissolved hydrogen has a good effect on sintering properties such as oxidation resistance and density of greens. This process can also reduce costs and processing time. In the experiment, commercially available Ti-6Al-4V powders are used. The powders are annealed using tube furnace in an argon atmosphere at $700^{\circ}C$ and $900^{\circ}C$ for 120 min. Hydrogen was injected temporarily during argon annealing to dissolve hydrogen, and a dehydrogenation process was performed simultaneously under an argon-only atmosphere. Without hydride formation, hydrogen was dissolved in the Ti-6Al-4V powder by X-ray diffraction and gas analysis. Hydrogen is first solubilized on the beta phase and expanded the beta phases' cell volume. TGA analysis was carried out to evaluate the oxidation resistance, and it is confirmed that hydrogen-dissolved Ti-6Al-4V powders improves oxidation resistance more than raw materials.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.11
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• pp.689-695
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• 2016

The performance of proton exchange membrane fuel cells (PEMFC) is strongly related to the water flow and accumulation in the gas diffusion layer (GDL) and catalyst layer. Understanding the behavior of fluid from the characteristics of the media is crucial for the improvement of the performance and design of the GDL. In this paper, a numerical method is proposed to calculate the design parameters of the GDL, i.e., permeability, tortuosity, and effective diffusivity. The fluid flow in a channel filled with randomly packed hard spheres is simulated to validate the method. The flow simulation was performed by lattice Boltzmann method with bounce back condition for the solid volume fraction in the porous media, with different values of porosities. Permeability, which affects the flow, was calculated from the average pressure drop and the velocity in the porous media. Tortuosity, calculated by the ratio the average path length of the randomly injected massless particles to the thickness of the porous media, and the resultant effective diffusivity were in good agreement with the theoretical model. The suggested method can be used to calculate the parameters of real GDL accurately without any modification.

• Journal of the Korean Magnetics Society
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• v.3 no.2
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• pp.87-93
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• 1993

Iron nitride (Fe-N) magnetic thin films were deposited using a DC magnetron sputtering system. Microstructures and magnetic properties were examined as a function of deposition power and nitrogen gas input ratio. The nitrogen content in the film was found to be the major factor determining the microstructure and the magnetic properties. The films deposited at low nitrogen input ratios have an $\alpha$-Fe structure of which the lattice is expanded due to the nitrogen atoms incorporated at the interstitial sites. As the nitrogen content in the film increases, the degree of lat-tice expansion increases and the value of saturation magnetization decreases linearly. The films with a high degree of lattice expansion give very low values of coercivity, which is attributed to the disturbance of colunmar growth and the decrease of surface roughness. Further increase in the nitrogen input ratio causes the phase transfonnation from $\alpha$-Fe to $Fe_{2-3}N$, resulting in the marked reduction in the saturation magnetization. The phase transformation occurs when, regardless of deposition conditions, the nitrogen content reaches at 15 at.% and the lattice is expanded by 5%.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.43-50
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• 1999

We have studied the alignment and the lattice quality of hexagonal rings of h-BN films synthesized by ion beam assisted deposition (IBAD) method. Boron was e-beam evaporated at 1.5 $\AA$/sec and nitrogen gas was ionized using end-hall type ion gun at 60, 80, and 100 eV, respectively. Substrate was either not heated or heated at 200, 400, 500, and $800^{\circ}C$, respectively. As nitrogen ion energy increases, c-axes of hexagonal rings tend to align parallel to the substrate, which is explained by larger compressive stress at higher ion energies. Alignment of c-axis increases with temperature and shows maximum around $400^{\circ}C$. The lattice quality of hexagonal rings improves with temperature. Such behaviors can be understood from two counter trends of increasing the atomic mobility and decreasing compressive stress with temperature. Hardness of h-BN films shows the same trend with the alignment of c-axis. Ion beam assisted deposition method seems to be effective for aligning hexagonal rings and optimizing h-BN properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.66-69
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• 1997

The p-GaN fins doped with the impurity of Zn were grown on n-GaN films to prevent the defects from the lattice mismatch with sapphire substrates by HVPE. For growth of the high quality n-GaN, the optimized conditions were at first deduced from the results of various HCI gas flow rates and growth temperatures. On the basis of these conditions, p-GaN films were grown and investigated of the characteristics. The FWHM of the double crystal rocking curve of n-GaN was decreased and the hexagonal phases on the surface of GaN films were tend to be vivid with the inoement of HCI gas flow rates. Finally the n-type GaN films with FWHM of 648arcsec were obtained at 10cc/min of HCI gas. As the GaN films were grown with the above conditions, Zn was introduced in the form of vapor as a dopant for p-GaN films. But when Zn vaporized at 77$0^{\circ}C$ was doped to the films, the crystallites of Zn were distributed uniformly on the surface of the GaN film due to the over-doped.