• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

• Clean Technology
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• v.20 no.3
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• pp.212-217
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• 2014

In order to regenerate the sulfidated desulfurization sorbent, oxygen is used as the oxidant agent on the regeneration process. The small amount of oxygen un-reacted in regeneration process is flowed into direct sulfur recovery process. However, the reactivity for $SO_2$ reduction can be deteriorated with the un-reacted oxygen by various reasons. In this study, the deactivation effects of un-reacted oxygen contained in the off-gas of regeneration process flowed into direct sulfur recovery process of hot gas desulfurization system were investigated. Sn-Zr based catalysts were used as the catalyst for $SO_2$ reduction. The contents of $SO_2$ and $O_2$ contained in the regenerator off-gas used as the reactants were fixed to 5.0 vol% and 4.0 vol%, respectively. The catalytic activity tests with a Sn-Zr based catalyst were for $SO_2$ reduction performed at $300-450^{\circ}C$ and 1-20 atm. The un-reacted oxygen oxidized the elemental sulfur produced by $SO_2$ catalytic reduction and the conversion of $SO_2$ was reduced due to the production of $SO_2$. However, the temperature for the oxidation of elemental sulfur increased with increasing pressure in the catalytic reactor. Therefore, it was concluded that the decrease of reactivity at high pressure is occurred by catalytic deactivation, which is the re-oxidation of lattice oxygen vacancy in Sn-Zr based catalyst with the un-reacted oxygen on the catalysis by redox mechanism. Meanwhile the un-reacted oxygen oxidized CO supplied as the reducing agent and the temperature in the catalyst packed bed also increased due to the combustion of CO. It was concluded that the rapidly increasing temperature in the packed bed can induce the catalytic deactivation such as the sintering of active components.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.319-326
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• 1993

The effects of $SnO_2$ crystallite size on the powder characteristics, the resistance in air and the sensitivity to 0.5 vol % $H_2$, CO-air mixture were observed. The size of SnO, powder was controlled by calcining temperature variation ($500^{\circ}C$ ~$1100^{\circ}C$) of $\alpha$-stannic acid fabricated from $SnCl_4 \cdot xH_2O$. Its crystallite size. evaluated from TEM image, was in the range of 8-54nm. With the reduction of crystallite size, the adsoption peak of $H_2O$ on FTIR curve became more clear while the lattice parameters were invariable. As the crystallite size decreased, with elements of thick film, the temperatures showing a minimum resistance in air and a maximum sensitivity to H, gas reduced. The temperature variations were assigned to the changes of activation energy of the active adsorbates, and it was suggested that the decrease of activation energy can be one of the reasons for the' sensitivity increase with the' fine powder.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.11
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• pp.1471-1476
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• 2011

The catalytic converter in the front part of an automobile's exhaust system converts toxic exhaust gas into nontoxic gas. The substrate in the central part of the converter has a circular or oval-shaped cross section and fine lattice-shaped walls. In the canning process, the substrate is wrapped in mats and inserted into a can. During this process, mat pressure is induced, which may cause brittle fracturing in the substrate. In this paper, a finite element program for determining the mat pressure distribution was developed to avoid these fractures. The program was created in Microsoft EXCEL, so the input and output procedures are relatively simple. It was assumed that the substrate is rigid, the mat is material nonlinear, and the can is linear elastic. The can is modeled as a beam element to resist both bending and uniform tension/compression. The number of elements is fixed to 35, and the number of iterations, to 20. The solutions are compared to ABAQUS solutions and found to be in good agreement.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.175-175
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• 2000

Si(100) surfaces were exposed to gas-phase thermal-energy hydrogen atoms, H(g). We find that thermal H(g) atoms etch, amorphize, or penetrate into the crystalline silicon substrate, depending on the employed Ts range during the H(g) exposure. We find that etching is enhanced as Ts is lowered in the 300-700K range, while amorphous silicon hydride (a-Si:H) formation dominates at a Ts below 300K. This result was well explained by the fact that formation of the etching precursor, SiHx(a), and amorphization are both facilitated by a lower Ts, whereas the final step for etching, SiH3(a) + H(g) longrightarrow SiH3(g), is suppressed at a lower Ts. we also find that direct absorption of H(g) by the crystalline bulk of Si(100) substrate occurs within a narrow Ts window of 420-530K. The bulk-absorbed hydrogen evolved out molecularly from Si(100) at a Ts 80-120K higher than that for surface monohydride phase ($\beta$1) in temperature-programmed desorption. This bulk-phase H uptake increased with increasing H(g) exposure without saturation within our experimental limits. Direct absorption of H(g) into the bulk lattice occurs only when the surface is atomically roughened by surface etching. While pre-adsorbed hydrogen atoms on the surface, H(a), were readily abstracted and replaced by D(g), the H atoms previously absorbed in the crystalline bulk were also nearly all depleted, albeit at a much lower rate, by a subsequent D(g) at the peak temperature in TPD from the substrate sequentially treated with H(g) and D(g), together with a gas phase-like H2 Raman frequency of 4160cm-1, will be presented.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.249-255
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• 2018

High temperature and low temperature gaseous nitriding was performed in order to study of the surface hardening and wear properties of the nitrided AISI 410 Martensitic stainless steels. High temperature gaseous nitiridng (HTGN) was carried out using partial pressure $N_2$ gas at $1,100^{\circ}C$ for 10 hour, and Low temperature gaseous nitiridng (LTGN) was conducted in a gas mixture of NH3 and N2 at $470^{\circ}C$ for 10 hour. The nitrided samples were characterized by microhardness measurements, optical microscopy and scanning electron microscopy. The phases were identified by X-ray diffraction and nitrogen concentration was analyzed by GD-OES. The HTGN specimen had a surface hardness of about $700HV_{0.1}$, $350{\mu}m$ of case depth. A ${\sim}50{\mu}m$ thick, $1,250HV_{0.1}$ hard nitrided case formed at the surface of the AISI 410 steel by LTGN, composed nitrogen supersaturated expanded martensite and ${\varepsilon}-Fe_{24}N_{10}$ iron nitrides. Additionally, the results of the wear tests, carried out LTGN specimen was low friction coefficient and high worn mass loss of ball. The increase in wear resistance can be mainly attributed to the increase in hardness and to the lattice distortion caused by higher nitrogen concentration.

• Journal of the Korean Magnetics Society
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• v.26 no.1
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• pp.7-12
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• 2016

Effects of annealing of the gas-atomized Fe-9%Si-2%Cr powder which is suitable for high frequency application in mobile devices because of its high electrical resistivity were studied with an emphasis on the order-disorder phase transition. The formation of B2 ordered phase could not be suppressed during atomization process. When the powder was annealed at a temperature higher than $550^{\circ}C$ the peak diffracted from $DO_3$ phase could be detected. With increasing annealing temperature lattice parameter and coercivity decreased. An interesting phenomenon was an abrupt increment of coercivity in the powder annealed at $450^{\circ}C$. Highest permeability could be shown in the powder annealed at a relative low temperature of $150^{\circ}C$ and then the permeability decreased with annealing temperature. The above-mentioned results could be successfully explained by both the formation of $DO_3$ ordered phases and the change of electrical resistivity of the Fe-Si-Cr powder which was also originated from the phase transition.

• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.151-157
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• 1996

Magnetic properties and microstructures of FeTaNC thin films, which were deposited by magnetron reactive sputtering rrethod, were investigated as a function of $CH_{4}$ and $N_{2}$ gas partial pressures. Magnetic properties of FeTaNC films depended on total reactive gas pressure as well as $CH_{4}/N_{2}$ pressure ratios. For reactive gas partial pressures of 5~10 %, optimum magnetic properties were observed in the FeTaNC films with proper $CH_{4}/N_{2}$ ratio. On the other hand, at 15% of gas partial pressure, FeTaN and FeTaC films showed superior properties to FeTaNC films. Above 15%, the magnetic properties of films rapidly degraded due to an excess incorporation of C and/or N atoms. Excellent soft magnetic properties of 17 kG of Bs, 0.3 Oe of He, and 4000 of $\mu'$(at 5 MHz) were obtained in the FeTaNC films. High permeabilities of FeTaNC films could be explained by the Fe lattice distortion caused by N atoms, hence reduction of magnetic anisotopy. While precipitated TaN and TaC particles effectively supress the growth of $\alpha-Fe$ grains leading to a good soft magentic properties, FeN and FeC phases such as $Fe_3N$, $Fe_4N$, FexC have detrimental effects.