• Journal of the Korean Society for Heat Treatment
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• v.30 no.6
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• pp.251-257
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• 2017

The effect of annealing temperature on the martensitic transformation behavior, tensile deformation chracteristics and shape recovery etc., has been studied in TiNi based shape memory ribbon fabricated by coldrolling of wire. TiNi based shape memory wire (${\phi}=500{\mu}m$) of which structure is intermetallic compound could be cold-rolled without process annealing up to the reduction rate in thickness of 50%, but a few cracks appear in cold-rolled ribbon in the reduction rate in thickness of 65%. The $B2{\rightarrow}R{\rightarrow}B19^{\prime}$ martensitic transformation or $B2{\rightarrow}B19^{\prime}$ martensitic transformation occurs in annealing conditions dissipating lattice defects introduced by coldrolling. However, in case of higher reduction rate or lower annealing temperature, martensitic transformation in cold-rolled and then annealed ribbons does not occur. The maximum shape recovery rate of cold-rolled ribbons with the reduction rate of 35 and 65% could be achieved at annealing temperatures of 250 and $350^{\circ}C$, respectively. The shape recovery rate seems to be related to the stress level of plateau region on stress-strain curve.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.66-69
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• 1997

The p-GaN fins doped with the impurity of Zn were grown on n-GaN films to prevent the defects from the lattice mismatch with sapphire substrates by HVPE. For growth of the high quality n-GaN, the optimized conditions were at first deduced from the results of various HCI gas flow rates and growth temperatures. On the basis of these conditions, p-GaN films were grown and investigated of the characteristics. The FWHM of the double crystal rocking curve of n-GaN was decreased and the hexagonal phases on the surface of GaN films were tend to be vivid with the inoement of HCI gas flow rates. Finally the n-type GaN films with FWHM of 648arcsec were obtained at 10cc/min of HCI gas. As the GaN films were grown with the above conditions, Zn was introduced in the form of vapor as a dopant for p-GaN films. But when Zn vaporized at 77$0^{\circ}C$ was doped to the films, the crystallites of Zn were distributed uniformly on the surface of the GaN film due to the over-doped.

• Proceedings of the KIEE Conference
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• 2000.11d
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.149-156
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• 1998

In this work, aiming at improvement of growth processes for the bulk GaAs single crystals, efforts have been made first in investigate thermodynamic properties of the Ga and As system and second to suggest that bulk GaAs crystals could be grown in principle with the single temperature zone only by determining the excess arsenic charge as a function of growth conditions. During crystal growth, this will be evaporized inside the growth chamber to induce the required inner pressure, instead of aesenic vapor pressure in the double temperature zone method, so as to be in equilibrium with the method, growth experiments have been prepared and carried out for dopes and undoped GaAs crystals with the newly built Bridgman system which was designed according to this principle. To compare the results to those of the double temperature zone method, the same numbers of GaAs crystals have been grown with both processes and all of them were characterized in single crystallinity, lattice defects and electrical properties. Especially, the relationship between growth conditions and crystal quality was discussed from the viewpoint of growth peculiarities with this method.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.167-185
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• 1999

In the present paper, KLN crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-melt interfaces. The crystal compositions were determined by chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements, respectively. The blue SHG characteristics of a KLN sample were also investigated using a pulsed dye laser. PACS: 42.70.M;81.10;81.10A;42.65.K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• Advances in nano research
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• v.1 no.1
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• pp.59-70
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• 2013

ZnO nanostructures of rod-like, faceted bar, cup-end bars, and spindle shaped morphologies could be grown by a low power ultrasonic synthesis process. pH of the reaction mixture seems to plays an important role for defining the final morphology of ZnO nanostructures. While the solution pH as low as 7 produces long, uniform rod-like nanostructures of mixed phase (ZnO and $Zn(OH)_2$), higher pH of the reaction mixture produces ZnO nanostructures of different morphologies in pure hexagonal wurtzite phase. pH of the reaction as high as 10 produces bar shaped uniform nanostructures with lower specific surface area and lower surface and lattice defects, reducing the defect emissions of ZnO in the visible region of their photoluminescence spectra.

• Tribology and Lubricants
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• v.10 no.4
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• pp.43-50
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• 1994

In order to elucidate the effects of co-existing additives (S$_{8}$, TBP: Tri butyl phosphate, ZnDTP: Zinc-dialkyl dithiophosphate) and the role of reacted surface film on the friction behavior of MoDTP (molybdenum dialkyl dithiophosphate), a friction experiment using a dual circular pipe edge surface type friction tester and XPS (X-ray photoelectronic spectrum) surface analysis were conducted. Friction reduction with MoDTP lubricant was proved to be greatly influenced by co-existing additive species. It was dependent on the properties of the film formed through the reaction between the additive and the surface. Phosphate film reduced the friction coefficient of MoDTP through suppression of diffusion of Mo compounds towards the metal substrate. On the other hand, sulfate film, which is inherently rich in lattice defects, did not lead to any appreciable friction reduction with MoDTP since the diffusion of the Mo compound towards the metal substrate was not effectively suppressed. With ZnDTP additive, the sulfide film formed through decomposition greatly influenced the lubricating performance of MoDTP. As such, properties of surface films formed from additives were proved to yield significant influence on the lubrication performance of MoDTP.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.263-266
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• 1997

We studied an interfacial characteristics of $In_{0.1}Ga_{0.9}As$/ GaAs by photoreflectance (PR) measurement at room temperature. With increasing thickness of epitaxial layer, Franz-Keldysh oscillation (FKO) periods of PR signals were decreased, and interfacial electric field was decreased. This can be explained by the increases of defects due to lattice mismatch near the heterointerface between InGaAs and GaAs. For the thickness of epitaxial layer thinner than the 300$\AA$, InGaAs epitazial layer closed to critical thickness and increased strain, and then the bandgap energy shifted high greatly.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.396-401
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• 1999

In the present paper, potassium lithium niobate(KLN) crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-solution interfaces. The crystal compositions were determined by a chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements. respectively. The blue second harmonic generation (SHG) characteristics of KLN sample were also investigated using a pulsed dye laser.