• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.31-31
• /
• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 한국분말재료학회지
• /
• 제30권2호
• /
• pp.123-129
• /
• 2023

High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of p-type Bi_0.5Sb_1.5Te_3.0 compounds sintered via spark plasma sintering. The sample post-processed via HIP maintains its electronic transport properties despite the reduced microstructural texturing. Moreover, lattice thermal conductivity is significantly reduced owing to activated phonon scattering, which can be attributed to the nanoscale defects created during HIP, resulting in an ~18% increase in peak zT value, which reaches ~1.43 at 100℃. This study validates that HIP enhances the thermoelectric performance by controlling the thermal transport without having any detrimental effects on the electronic transport properties of thermoelectric materials.

• Nuclear Engineering and Technology
• /
• 제49권1호
• /
• pp.209-215
• /
• 2017

Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of $1{\times}10^8n/cm^2$, $1{\times}10^9n/cm^2$, $1{\times}10^{10}n/cm^2$, and $1{\times}10^{11}n/cm^2$. Electrical characteristics such as current-voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

• 자원환경지질
• /
• 제27권6호
• /
• pp.507-521
• /
• 1994

Bentonite occurs in the Janggi Conglomerate of Tertiary age and consists mainly of montmorillonite with Mg as predominant interlayer cations. The bentonite was reacted with various concentrations of sulfuric acid (0.8~1.5M) for various reaction time (1-10h) at $103^{\circ}C$. Cation exchange capacity, exchangeable cations, surface area and solid acidity of the original bulk and acid activated bentonites were measured. Chemical analysis, X-ray diffraction, differential thermal analysis and infrared spectroscopy were used to characterize the changes in structure and properties of the acid activated bentonite. The dissolution of octahedral cations occurs not only from the edge of the clay platelets but also throughout the whole clay structure creating vacant octahedral sites. These lattice defects are created by $H^+$ diffused into the smectite layers. The cations leached possibly from the octahedral sheets are adsorbed on the interlayer exchange sites. They are exchanged with hydronium ions again by stronger acid attack. These reactions create wedge-shaped pores resulting in the increase of the surface area and the changes the morphology in the lattice structure.

• Bulletin of the Korean Chemical Society
• /
• 제17권8호
• /
• pp.700-706
• /
• 1996

We present the results of molecular dynamics simulations of monolayers of long-chain alkyl thiol [S(CH2)15CH3] molecules on an air-solid interface using the extended collapsed atom model for the chain-molecule and a gold surface for the solid surface. Several molecular dynamics simulations have been performed on monolayers with areas per molecule ranging from 18.30 to 32.10 Å2/molecule. It is found that there exist three possible transitions: a continuous transition characterized by a change in molecular configuration without change in lattice structure, a sudden transition characterized by the distinct lattice defects and perfect islands, and a third transition characterized by the appearance of a random, liquid-like state. The analysis of probability distributions of the segments shows that the structure of the chain-molecules at the air-solid interface is completely different from that at the air-water interface in the view of the degree of overlap of the probability distributions of the neighbor segments. The calculated diffusion coefficients of the chain-molecules on the monolayers seem to be not directly related to any one of the three transitions. However, the large diffusion of the molecules enhanced by the increment of the area per molecule may induce the second transition.

• 암석학회지
• /
• 제10권3호
• /
• pp.202-211
• /
• 2001

루미네센스(luminescence)는 석영이나 장석 등과 같은 무기결정이 외부에서 에너지를 받아 흡수된 에너지를 빛으로 바꿔 외부에 방출하는 물리적인 현상이다. 가전자대(valence band)에 존재하는 하전입자들은 전리성 방사선에 의해 전자와 정공(hole)으로 이온화 되고, 이온화된 전자와 정공들은 결정 내에서 자유로이 움직이다가 결정 내에 존재하는 격자결함에 포획된다. 이러한 결정을 빛으로 여기하면 격자결함에 포획된 전자들이 결함에서 빠져 나와 발광중심(recombination center)에서 정공과 재결합하면서 빛을 동반하게 되는데, 이를 광 여기 루미네센스(optically stimulated luminescence; OSL)라 한다. 열 루미네센스(thermoluminescence; TL) 연대 측정법의 원리와 같이, 광 여기 루미네센스를 적당한 조건에서 관측하면 퇴적층의 연대 계산에 응용할 수 있다. 광 여기 루미네센스를 연대측정에 이용하면 빛에 민감한 전자들만 여기시킬 수 있는 장점이 있다. 이 연구에서는 신기 퇴적층으로부터 분리된 석영을 청색 파장의 빛으로 여기하여 그로부터 검출된 광 여기 루미네센스를 신기 퇴적층의 연대 산출에 응용하였다. 논문에서는 광 여기 루미네센스 연대측정법과 관련된 일련의 실험방법 및 최근에 소개된 연구성과, 그리고 앞으로 보다 신뢰도 높은 연대측정 결과를 얻기 위해 연구되어야 할 내용을 이 연구에서 수행한 신기 퇴적층의 연대측정 결과와 함께 기술하였다.

• 대한금속재료학회지
• /
• 제46권7호
• /
• pp.412-419
• /
• 2008

Creep behavior of the squeeze infiltrated AS52 Mg matrix composites reinforced with 15 vol% of aluminum borate whiskers($Al_{18}B_4O_{33}w$) fabricated squeeze infiltration method was investigated. Microstructure of the composites was observed as uniformly distributed reinforcement in the matrix without any particular defects of casting pores etc.. Creep test was carried out at the temperature of 150 and $200^{\circ}C$ under the applied stress range of 60~120 MPa. The creep resistance of the composite was significantly improved comparing with the unreinforced AS52 Mg alloy. The creep behavior of composites might be interpreted with the substructure invariant model successfully for the composite. Threshold stress of the composite exist for the creep deformation of the composite. The analysis of the creep behavior of the composite with threshold stress indicated that creep deformation was controlled by the lattice diffusion process of AS52 Mg matrix at given effective stresses and temperatures. Activation energy was also calculated to check lattice diffusion controlled creep behavior of the composite.

• 한국진공학회지
• /
• 제11권1호
• /
• pp.50-58
• /
• 2002

Si 기판 위에 GaN의 성장은 Si이 사파이어보다 값이 저렴하고, 기존의 Si의 직접회로 공정에 GaN를 쉽게 접목시킬 수 있는 측면에서 다양한 장점이 있다. 그러나, Si은 GaN와의 격자상수와 열팽창계수의 차이가 사파이어보다 크며, 이로 인해 격자부정합에 의한 여러 결함을 발생시킨다. 따라서, Si 기판 위에 고품질의 GaN를 얻기 위해서는 AlN과 같은 완충층을 사용하여 격자부정합에 의한 결함을 줄여야 한다. 본 연구에서는 Si (111) 기판 위에 MOCVD, 스퍼터링과 MOMBE의 3가지 방법으로 결정성이 다른 3가지 유형의 AlN 완충층을 얻은 후, MOCVD법으로 GaN를 증착시켜 각각의 성장특성을 비교하였다. AlN 완충층과 GaN의 격자결합, 완충층의 표면 거칠기가 격자결함에 미치는 영향, 결정성, 성장방향, 결함(공공, 적층결함, 전위) 등을 TEM, XRD를 이용해 비교 분석하였다. AlN완충층의 결정성은 GaN의 성장에 있어 매우 큰 영향을 미치는 것을 확인할 수 있었다. 초기 성장과정에서 MOCVD과 MOMBE 법으로 성장시킨 AlN 완충층은 GaN 초기 성장에서 out-of-plane의 성장방향이 틀어지는 것을 감소시켜 주었다.

• 분석과학
• /
• 제5권1호
• /
• pp.121-126
• /
• 1992

GaAs ${\Sigma}=19$, [110] tilt grain boundary의 구조를 투과전자현미경을 이용하여 연구하였다. Higher-Order Laue-Zone(HOLZ) 빔들과 {200} 빔과의 dynamical coupling 결과를 검토하여 입계 양쪽 각각의 입자(grain) 내 Ga-As의 상대적 위치(방향성)를 결정하였으며, 두 입자 사이에는 inversion symmetry가 결합되지 않은 ${\Sigma}=19$ coincidence에 해당하는 교차각이 있었다. 계면은 $\{331\}_A/\{331\}_B$, [110] 결정면을 따라서 발생하는 경향이 강함을 관측했다. 이 facet에서의 원자구조 및 격자이동 등을 고분해 투과전자현미경을 이용하여 밝혔다. 5-, 7-, 그리고 6-member ring의 조합으로 되어 있는 단위를 계면원자구조 model로 제시했다.

• Progress in Superconductivity
• /
• 제3권1호
• /
• pp.5-12
• /
• 2001

Our experimental research focuses on manipulating pinning deflects to alter the phase diagram of vortex matter, creating new vortex phases. Vortex matter offers a unique opportunity for creating and studying these novel phase transitions through precise control of thermal, pinning and elastic energies. The vortex melting transition in untwinned YB $a_2$C $u_3$ $O_{7-}$ $\delta$/ crystals is investigated in the presence of disorder induced by particle irradiation. We focus on the low disorder regime, where a glassy state and a lattice state can be realized in the same phase diagram. We follow the evolution of the first order vortex melting transition line into a continuous transition line as disorder is increased by irradiation. The transformation is marked by an upward shift in the lower critical point on the melting line. With columnar deflects induced by heavy ion irradiation, we find a second order Bose glass transition line separating the vortex liquid from a Bose glass below the lower critical point. Furthermore, we find an upper threshold of columnar defect concentration beyond which the lower critical point and the first order melting line disappear together. With point deflect clusters induced by proton irradiation, we find evidence for a continuous thermodynamic transition below the lower critical point..