• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.237-241
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• 2014

We investigated the optimal etching conditions and properties of the surface change due to molten KOH/NaOH chemical wet etching using an AlN wafer which has been put to practical use in the present study. Results were observed using a scanning electron microscope after 5 minutes etching at $350^{\circ}C$, was found to have a surface form of the respective other Al-face, the N-face. In particular, etch-pit in the form of a hexagon, which is observed in the Al-face appeared, It was calculated at $2{\times}10^6/cm^2{\sim}10^{10}/cm^2$ dislocation density. In the case of N-face, lattice defects in the form of the hexagonal pyramids is formed. It was discovered that in order to observe the orientation of the wafer, which corresponds to the C-axis direction of the resulting hexagonal AlN which was analyzed using XRD (0002) and is a state of being oriented in the (0004) plane. The Radius of curvature of AlN wafer was 1.6~17 m measured by DC-XRD rocking curve position.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.34-40
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• 2000

The $Pb_{0.94}Y_{0.04}[(Zr_{0.6}Sn_{0.4})_{0.915}Ti_{0.085}]O_3$ ceramics which corresponded to the antiferroelectric-ferroelectric phase boundary composition were prepared for digital-type-piezoelectric/electrostrictive device application. Their dielectric, field-induced polarization (P) and strain (X) behaviors were studied with variations in sintering condition and excess PbO content. The orthorhombic structure of specimens was hardly affected either by excess PbO addition or sintering temperature. With increasing excess PbO content, grains tended to be smaller and rounded ones, and the optimum sintering temperature was lowered. Excess PbO addition stabilized the antiferroelectric phase of the specimen effectively, which was confirmed by P-E and X-E analyses. Also the digital-type-strain character was found to be enhanced despite of slight increase in phase transition (AFE-FE) field and electrical resistivity, and decrease in maximum strain. These results were explained in terms of possible lattice defects and domain wall motion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.733-741
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• 1996

In this study MeV Si self ion implantations were done to reveal the intrinsic behavior of defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant ones. Self implantations were conducted using Tandem Accelerator with energy ranges from 1 to 3 MeV. Defect formation by high energy ion implantation has a significant characteristics in that the lattice damage is concentrated near Rp and isolated from the surface. In order to investigate the energy dependence on defect formation, implantation energies were varied from 1 to 3 MeV under a constant dose of $1{\times}10^{15}/cm^2$. RBS channe!ed spectra showed that the depth at which as-implanted damaged layer formed increases as energy increases and that near surface region maintains better crystallinity as energy increases. Cross sectional TEM results agree well with RBS ones. In a TEM image as-implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. In the case of 2 MeV $Si^+$ self implantation a critical dose for the secondary defect formation was found to be between $3{\times}10^{14}/cm^24$ and $5{\times}10^{14}/cm^2$. Upon annealing the upper layer of the dark band was removed while the bottom part of the dark band did not move. The observed defect behavior by TEM was interpreted by Monte Carlo computer simulations using TRIM-code. SIMS analyses indicated that the secondary defect formed after annealing gettered oxygen impurities existed in silicon.

• Journal of the Mineralogical Society of Korea
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• v.21 no.4
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• pp.435-442
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• 2008

Natural, synthetic, and treated diamonds were studied by NMR and EPR. It was demonstrated that natural and synthetic diamonds, treated and non-treated diamonds, high pressure high temperature (HPHT) treated and electron beam treated diamonds could be distinguished among each other based on the $^{13}C$ NMR spectra acquired for relatively short periods of 100 minutes. The $^{13}C$ NMR linewidths of gem quality synthetic diamonds were broader than 1.6 ppm due to the paramagentic effects of transition metals, generally used as catalysts, while the linewidths of gem quality natural diamonds were narrower than 0.5 ppm regardless of the methods of treatment. The linewidth (0.5 ppm) for a HPHT treated, gem quality natural diamond was as broad as more than twice of the linewidth (0.2 ppm) of an electron beam treated diamond. The $^{13}C$ NMR signal intensities of treated, gem quality natural diamonds were as strong as more than 10 times of the intensities of non-treated, gem quality natural diamonds. When correlated with the concentrations of the paramagnetic defects (electrons) obtained from the EPR spectra, the relative $^{13}C$ NMR signal intensities increased in proportion to the concentrations of the paramagnetic electrons contained in each sample but the electron beam treated diamond was an exception. This suggested that the lattice component, in addition to the paramagnetic defect component, should also be considered in determining the $^{13}C$ NMR signal intensity of the electron beam treated diamond.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.59-59
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• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.282-286
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• 2021

Penetration depth and compressive residual stress of laser-carburized TiZrN coating by thickness of carbon paste were investigated in terms of carbon potential. The carbon paste was covered with a thickness of 1.1 mm using screen printing, and applied to a thickness of 0.4 mm using spin coating, and laser carburization was performed under the same conditions. As the thickness of carbon paste increased, the diffraction pattern of the laser-carburized TiZrN coating shifted to a lower angle, indicating solid solution strengthening and lattice distortion. For microstructure analysis using TEM, the defects and carbon concentration of the laser-carburized TiZrN coating increased as the carbon paste was thicker. It indicated that the variation of the carbon potential corresponds to the change in the paste thickness. In XPS depth profile analysis, high concentration of carbon and formation of carbide were observed in laser-carburized TiZrN coating with thick carbon paste. It revealed that the carbon concentration on the surface and carbon potential were changed by the thickness control of carbon paste. The compressive residual stress increased from 3.67 GPa to 4.58 GPa by the variation of carbon concentration.

• Korean Journal of Mineralogy and Petrology
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• v.34 no.1
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• pp.31-40
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• 2021

The hydrogen in nominally anhydrous mineral is known to be associated with lattice defects, but it also can exist in the form of water and hydroxyl groups on the large surface of the nanoscale particles. In this study, we investigate the effectiveness of 1H solid-state nuclear magnetic resonance (NMR) spectroscopy as a robust experimental method to quantify the hydrogen atomic environments of amorphous silica nanoparticles with varying relative humidity. Amorphous silica nanoparticles were packed into NMR rotors in a temperature-humidity controlled glove box, then stored in different atmospheric conditions with 25% and 70% relative humidity for 2~10 days until 1H NMR experiments, and a slight difference was observed in 1H NMR spectra. These results indicate that amount of hydrous species in the sample packed in the NMR rotor is rarely changed by the external atmosphere. The amount of hydrogen atom, especially the amount of physisorbed water may vary in the range of ~10% due to the temporal and spatial inhomogeneity of relative humidity in the glove box. The quantitative analysis of 1H NMR spectra shows that the amount of hydrogen atom in amorphous silica nanoparticles linearly increases as the relative humidity increases. These results imply that the sample sealing capability of the NMR rotor is sufficient to preserve the hydrous environments of samples, and is suitable for the quantitative measurement of water content of ultrafine nominally anhydrous minerals depending on the atmospheric relative humidity. We expect that 1H solid-state NMR method is suitable to investigate systematically the effect of surface area and crystallinity on the water content of diverse nano-sized nominally anhydrous minerals with varying relative humidity.