• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.427-428
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• 2009

The authors investigated anomalous nanoporous structures of aluminum oxides during the Al anodization process. We implemented two-steps anodizing process for the electrolyte of oxalic acid. As increasing DC voltages, lattice constants are proportionally increased. For the curved surface, the surface electric field was distorted so that the nanoporous pipe channel changed to a cone-type shape. We confirmed the periodicity by using the FFT(Fast Fourier Transform) analysis.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.162-163
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• 2002

1-D photonic band-gap structure is identified in a cholesteric liquid crystal system. The optical transmission spectrum is measured and compared with the theoretical analysis. Nonlinear transmission is measured near the band edge. Also 3-D photonic band-gap structures are fabricated from dielectric colloidal polystyrene beads through a centrifuge method. The fabricated photonic crystals exhibit opalescent colors under white light and show a clear diffraction peak dependent on the incident angle of the light beam. Also the scanning electron microscope image was taken to verify the face-centered cubic crystal structure. Bragg's law and Snell's law are employed to describe the position of angle resolved diffraction peaks. It was shown that the optically deduced effective refractive index and lattice constants were in good agreement with the crystal structure identified by scanning electron microscope.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.415-423
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• 1988

Mixtures of carbon and silica (about 0.46${\mu}{\textrm}{m}$) which was synthesized by the hydrolysis of ethyl silicate, the molar ratio of silica/carbon was fixed as 1/10(weight ratio : 1/2), were nitrided in the temperature range 135$0^{\circ}C$~150$0^{\circ}C$. The phse of the product Si3N4 was $\alpha$ phase and the morphology was hexagnoal prism and the nitridation reaction was completed in 5 hrs at 150$0^{\circ}C$ or 7hrs at 145$0^{\circ}C$. The reaction rate above 150$0^{\circ}C$ was diffusion-controlled, following Jander equation. Activation energy Q was derived from the Arrhenius plot and the value was about 101kcal/mol. Axis ratio of Lattice constants(c/a) was 0.726 and unit volume was $\AA$3, the larger the molar ratio of carbon/Alkoxide was, the smaller the particle size of $\alpha$Si3N4 was.

• Food Science and Biotechnology
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• v.17 no.5
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• pp.895-898
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• 2008

The mobility of water in set yogurt during fermentation was studied using nuclear magnetic resonance (NMR) relaxometry. The spin-spin relaxation was analyzed using a 2-fraction model, resulting in 2 spin-spin relaxation time constants $T_{21}$ and $T_{22}$. Both $T_{21}$ and $T_{22}$ exhibited rapid changes between 2 and 4 hr of fermentation, coinciding with the drop in pH and the rise in lactic acid bacteria count. The spin-lattice relaxation time $T_1$ increased over the fermentation period. Both $T_1$ and $T_2$ showed an increase in the mobility of water upon gel formation during fermentation. Water redistribution within the gel matrix due to casein aggregation and structure forming may be responsible for the changes in mobility.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.124-124
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• 2003

To improve the electrochemical properties of thin-film LiCoO$_2$ cathodes, metal oxides were coated on the LiCoO$_2$ thin films using f sputtering. Galvanostatic charge-discharge experiments showed the enhanced cycling behaviors in the metal-oxide coated LiCoO$_2$ thin films than the uncoated ones. These results are because the metal-oxide coating layer suppresses the degradation of Li-diffusion kinetics during cycling, which is related to the protection of cathode surface from the electrolytes [l-3]. The variation in the metal-oxide coating thickness ranging from 10 to 300 nm did not affect the electrochemical properties. Changes of lattice constants in the coated and bare LiCoO$_2$ thin films at different charged states will also be discussed.

• Journal of Powder Materials
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• v.10 no.2
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• pp.129-135
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• 2003

Nanocrystalline powders of $MnFeP_{1-x}As_x$(x=0.45-0.6) have been synthesized by mechanochemical reaction at room temperature using high-energy ball milling from mixtures of Mn, Fe, P, and As Powders. It has been found that a mechanically induced self-propagating reaction (MSR) occurs within 2 hours of milling and it produces very fine polycrystalline powder having a hexagonal $Fe_2P$ structure. Further milling up to 24 hours did not change the crystalline and average particle sizes or the phase composition of the milling product. When x is 0.65, no reaction among the reactants has been observed even after 24 hours of milling. As the P content decreases in $MnFeP_{1-x}As_x$, the incubation time for the MSR has increased and the lattice constants in both a and c axes have changed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.554-557
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• 2001

In this work, we had synthesis the GaN powder by direct reaction between Ga and NH$_3$at the temperature range of 1000∼1150$^{\circ}C$, and investigated the reaction condition dependence of the GaN yield and some properties of GaN powder. The synthesized powder had Platelet and prismatic shape and showed hexagonal crystalline structure with the lattice constants of a= 3.1895 ${\AA}$, c= 5.18394 ${\AA}$, and the ratio of c/a = 1.6253. The GaN powder synthesis processes were examined based on the oxidation process of mater, and found as combined with mass transport process for the initial stage and diffusion-limited reaction for the extended reaction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.71-73
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• 1995

In this work, we synthsized GaN powders by the direct reactions of Ga with NH$_3$at the temperature range of 950∼1150$^{\circ}C$ and we growth the GaN thin films on Si and sapphire substrates using the synthesized GaN powders by the vapor phase epitaxy method. The synthesized powder had hexagonal crystal structures with lattice constants of a$\sub$0/=3.1895${\AA}$, c$\sub$0/=5.18394${\AA}$. The reaction rates of GaN were increased with both reaction time and temperature, however it did not depends on the flow rates of NH$_3$. The island type GaN crystals were grown on (0001) sapphire substrates and fast lateral growth of GaN on (111) Si substrate than sapphire was observed in our experiments.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1814-1818
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• 1989

The crystals of ZnGa2S4 and ZnGa2S4:Co(2mole%) were synthesized from high-purity (99.999%) elements of Zinc, Gallium, and sulfur. The crystal structure of these crystals belong to a tetragonal system with layer type and the lattice constants are a =5.35\ulcorner c=10.43\ulcornerfor ZnGa2S4: Co(2 mole%) crystal at 298\ulcorner. The optical absorption spectra of these compounds were obtained through reflectance measurements using a 60 mm diameter intergrating sphere. The optical energy gaps are 3.18eV for ZnGa2S4 and 2.60eVfor ZnGa2S4:L Co(2mole%)at 298\ulcorner, respectively.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.503-508
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• 1991

High pure and fine mullite powders were synthesized from Al-secbutoxide[Al(OC4H9)3] and TEOS[Si(OC2H5)4] (SiO2/Al2O3=2/3 mole). Sol-Gel process by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. The mullite precursor was synthesized within 30 hrs, which was reduced about a half of synthetic time in comparison with the other's study. Al-Si spinel was formed at 980℃ and mullite crystal was formed at 1200℃. Mullite powders synthesized in this study was spherical type like those of the other studies and particle sizes were very fine. Also mullite powders calcined at 1,600℃ had a stoichiometric composition (3Al2O3·2SiO2) and lattice constants were coincided with known theoretical values.