• 제목/요약/키워드: Lattice constant,Hydrogen

검색결과 16건 처리시간 0.019초

Ti-M-V 합금의 기지 및 제 2상의 수소화 특성 (Hydrogenation Characteristics of the Matrix and the Second Phases of Ti-M-V Alloys)

  • 조성욱
    • 한국수소및신에너지학회논문집
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    • 제14권2호
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    • pp.97-104
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    • 2003
  • The structural transitions of the matrix and the second phases of $Ti_{1.0}Mn_{0.9}V_{1.1}$ and $Ti_{1.0}Cr_{1.5}V_{1.7}$ alloys upon hydrogenation have been investigated at 293K. The effect of hydrogen isotope on their crystal structures has been also discussed. The crystal structures, Phase abundance and lattice parameters of the hydrides were determined by the Rietveld method using X-ray diffraction data. At the experimental temperature, the $Ti_{1.0}Mn_{0.9}V_{1.1}$ alloy and $Ti_{1.0}Cr_{1.5}V_{1.7}$ alloy revealed different structural transition processes upon hydrogenation although the crystal structures of these two alloys are both BCC at room temperature. The second phases such as Ti-rich phase with $NiTi_2$ structure and $\alpha$-Ti with HCP structure absorbed hydrogen at relatively low hydrogen pressures and the phase abundance remained almost constant. This means that it is desirable to decrease the amount of the second phases as far as possible in order to increase the effective hydrogen storage capacities of the alloys. The crystal structures of corresponding isotope hydrides, the phase abundance and the lattice parameters did not depend on the kind of hydrogen isotope, but only on the hydrogen content.

금속의 특성 및 금속수소화물의 팽창에 관한 수치해석 (Numerical Study on Properties of Metals and Expansion of Metal Hydrides)

  • 정영관;박규섭
    • 한국수소및신에너지학회논문집
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    • 제15권4호
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    • pp.257-265
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    • 2004
  • Numerical analysis, as EAM(Embedded Atom Method), in the atomic level is necessary to analyze the relation between the hydrogen and hydrogen absorption metals. EAM established on density functional theory was developed as a new means for calculating various properties and phenomena of realistic metal systems. In this study, we had constructed the EAM program from constitutive formulae and parameters of the hydrogen, nickel and palladium for the purpose of predicting the expansion behavior on hydrogen absorbing. In result, not only the ground state properties of metals but also lattice constants and the volume expansion ratio of metal hydrides show good agreement with Daw's data and experiment data.

A MEIS Study on Ge Eppitaxial Growth on Si(001) with dynamically supplied Atomic Hydrogen

  • Ha, Yong-Ho;Kahng, Se-Jong;Kim, Se-Hun;Kuk, Young;Kim, Hyung-Kyung;Moon, Dae-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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    • pp.156-157
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    • 1998
  • It is a diffcult and challenging pproblem to control the growth of eppitaxial films. Heteroeppitaxy is esppecially idfficult because of the lattice mismatch between sub-strate and depposited layers. This mismatch leads usually to a three dimensional(3D) island growth. But the use of surfactants such as As, Sb, and Bi can be beneficial in obtaining high quality heteroeppitaxial films. In this study medium energy ion scattering sppectroscoppy(MEIS) was used in order to reveal the growth mode of Ge on Si(001) and the strain of depposited film without and with dynamically supplied atomic hydrogen at the growth thempperature of 35$0^{\circ}C$. It was ppossible to control the growth mode from layer-by-layer followed by 3D island to layer-by-layer by controlling the hydrogen flux. In the absent of hydro-gen the film grows in the layer-by-layer mode within the critical thickness(about 3ML) and the 3D island formation is followed(Fig1). The 3D island formation is suppressed by introducing hydrogen resulting in layer-by-layer growth beyond the critical thickness(Fig2) We measured angular shift of blocking dipp in order to obtain the structural information on the thin films. In the ppressence of atomic hydrogen the blocking 야 is shifted toward higher scattering angle about 1。. That means the film is distorted tetragonally and strained therefore(Fig4) In other case the shift of blocking dipp at 3ML is almost same as pprevious case. But above the critical thickness the pposition of blocking dipp is similar to that of Si bulk(Fig3). It means the films is relaxed from the first layer. There is 4.2% lattice mismatch between Ge and Si. That mismatch results in about 2。 shift of blocking dipp. We measured about 1。 shift. This fact could be due to the intermixing of Ge and Si. This expperimental results are consistent with Vegard's law which says that the lattice constant of alloys is linear combination of the lattic constants of the ppure materials.

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압연가공판재의 수소저장과 팽창거동과의 관계 (The Relation between Hydrogen absorption and Expansion behavior in the Rolled Plate)

  • 정영관;김경훈;이근진
    • 한국수소및신에너지학회논문집
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    • 제12권2호
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    • pp.121-128
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    • 2001
  • In order to study the relation between expansion of the specimen and the hydrogen absorption rate, thin palladium plates with cold rolling were used. Thin palladium plates were hydrogenated in the 0.1mol $H_2SO_4$ electrolyte by electrochemical method. The expansion behavior on hydrogen absorbing can be obtained by X-ray diffraction analysis and by micrometer measurement It is noted that the expansion rate of Palladium specimens in thickness direction is larger than in length and width direction. The lattice constants increase quickly with increasing hydrogen absorbing rate up to 0.5, but above the rate they keep constant. Also the clues for plastic deformation, such as slip lines and voids, were observed in abundantly even though the plates were hydrogenated once.

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에틸 아세토아세테이트 토토머리즘 평형 상수의 밀도 의존성 (The Effect of Solvent Density on the Ethyl Acetoaceate Tautomerism)

  • 박윤국
    • 공업화학
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    • 제17권3호
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    • pp.291-295
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    • 2006
  • 본 연구에서는 아임계 및 초임계 이산화탄소하의 에틸 아세토아세테이트의 케토-에놀 토토머릭 평형상수를 후리에 적외선 분광기를 이용하여 세 가지 다른 온도에서 측정하였다. 케토-에놀 토토머릭 평형상수의 용매에 대한 밀도 의존성을 연구하기 위하여 정온하에서 이산화탄소의 압력을 변화시켰다. 용매인 이산화탄소의 밀도를 증가 시키면, 케토 토토머의 양이 증가하게 되어 케토-에놀 토토머릭 평형상수값이 감소한다. 에틸 아세토아세테이트의 케토-에놀 토토머릭 평형상수의 밀도의존성을 연구하기 위하여 변형된 격자유체수소결합 모델을 적용하였다.

열화학 사이클 H2 제조를 위한 (Co0.5 Mn0.5)Fe2O4의 열적 거동 (Thermal Behavior of (Co0.5 Mn0.5)Fe2O4 for Hydrogen Generation by Thermochemical Cycle)

  • 신현창;최승철;김철성;김종원;주오심;정광덕
    • 한국수소및신에너지학회논문집
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    • 제13권2호
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    • pp.143-150
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    • 2002
  • The thermal behavior of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ prepared by a co-precipitation wasinvestigated for Hz generation by the thermochemical cycle. The reduction reaction of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ started from $480^{\circ}C$, and the weight loss was 1.6 wt% up to $1100^{\circ}C$. At this reaction, $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ was reduced by release of oxygen bonded with the $Fe^{3+}$ ion in the B site of ($CO_{0.5}$ $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$. In the $H_2O$ decomposition reaction, $H_2$ was generated by oxidationof reduced $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$. The crystal structure of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ for reduction reaction maintained spinel structure and the lattice constant of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ ($8.41\AA$) was enlarged to $8.45\AA$. But the lattice constant of $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ after $H_2O$ decomposition reaction did not change to $8.45\AA$. Then, $(Co_{0.5}\;Mn_{0.5})Fe_2O_4$ is excellent material in the thermochemical cyclic reaction due to release oxygen at low temperature for the reduction reaction and produce $H_2$ maintaining crystal structure for redox reaction.

열화학싸이클 수소를 제조를 위한 (Cu0.5Mn0.5)Fe2O4의 열적 거동 (Thermal Behaviors of (Cu0.5Mn0.5)Fe2O4 for H2 production by thermochemical cycles)

  • 김진웅;최승철;주오심;정광덕
    • 한국수소및신에너지학회논문집
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    • 제15권1호
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    • pp.32-38
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    • 2004
  • Thermal behaviors of $(Cu_{0.5}Mn_{0.5})Fe_2O_4$, prepared by a solid method, were investigated for $H_2$ production by a thermochemical cycle. The thermal reduction of $(Cu_{0.5}Mn_{0.5})Fe_2O_4$ started from $300^\circ{C}$ and the weight loss was 1.3 wt% up to 1200. XRD shows the prepared ferrite has the spinel structure with a lattice constant of $8.414{\AA}$ and changed to the oxygen deficient structure by thermal reduction. Oxygen and hydrogen can be separately produced by the cycles of thermal reduction and water oxidation of the oxygen deficient ferrite.

Surface Reactions of Atomic Hydrogen with Ge(100) in Comparison with Si(100)

  • Jo, Sam Keun
    • Applied Science and Convergence Technology
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    • 제26권6호
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    • pp.174-178
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    • 2017
  • The reactions of thermal hydrogen atoms H(g) with the Ge(100) surface were examined with temperature-programmed desorption (TPD) mass spectrometry. Concomitant $H_2$ and $CH_4$ TPD spectra taken from the H(g)-irradiated Ge(100) surface were distinctly different for low and high H(g) doses/substrate temperatures. Reactions suggested by our data are: (1) adsorbed mono(${\beta}_1$)-/di-hydride(${\beta}_2$)-H(a) formation; (2) H(a)-by-H(g) abstraction; (3) $GeH_3$(a)-by-H(g) abstraction (Ge etching); and (4) hydrogenated amorphous germanium a-Ge:H formation. While all these reactions occur, albeit at higher temperatures, also on Si(100), H(g) absorption by Ge(100) was not detected. This is in contrast to Si(100) which absorbed H(g) readily once the surface roughened on the atomic scale. While this result is rather against expectation from its weaker and longer Ge-Ge bond as well as a larger lattice constant, we attribute the absence of direct H(g) absorption to insufficient atomic-scale surface roughening and to highly efficient subsurface hydrogenation at moderate (>300 K) and low (${\leq}300K$) temperatures, respectively.

A Study of Activated Sintering Mechanism of $UO_2$ Powder by High Temperature X-Ray Diffractometry

  • Lee, Byoung-Whie;Suh, Kyung-Soo
    • Nuclear Engineering and Technology
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    • 제4권2호
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    • pp.132-136
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    • 1972
  • 고온 X-선 회절 방법으로 0.05 w/o TiO$_2$첨가로 인한 $UO_2$활성화 소결기구에 미치는 영 향을 조사하였다. 120$0^{\circ}C$에서 TiO$_2$를 첨가한 $UO_2$와 첨가하지 않은 $UO_2$격자상수의 열팽창은 상온에서의 격자상수 보다 각각 1.448%와 1.354% 더 컸으며 TiO$_2$를 첨가한 경우가 약0.094% 더 컸었다. 또한 0.05 w/o TiO$_2$를 첨가한 $UO_2$Pellet의 108$0^{\circ}C$에서의 격자상수는 120$0^{\circ}C$에서의 $UO_2$격자상수와 동일하였다. 이 온도차이는 $UO_2$소결시 0.05w/o TiO$_2$의 첨가로 인하여 강하된 소결온도와 잘 일치된다. 이와같이 TiO$_2$의 미량첨가가 고온에서 $UO_2$격자상수의 열팽창을 증가시켜 $UO_2$의 화산을 촉진시킴으로서 활성화 소결에 영향을 준다고 생각된다.

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연강에서의 닉켈-주석과 주석-아연합금 전착층의 우성배향와 미소경도에 관한 연구 (An Investigation of Preferred Orientation and Microhardness of Nickel-Tin and Tin-Zinc Alloy Electrodeposits on Mild Steel)

  • 안덕수;변수일
    • 한국표면공학회지
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    • 제13권3호
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    • pp.146-154
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    • 1980
  • The effects of various electrodeposition conditions (deposition temperature and cathode current density) on preferred orientation and microhardness of electrodeposited Ni-Sn and Sn-Zn alloys were studied. At deposition temperatures from 25$^{\circ}$ to 95$^{\circ}C$ and constant cathode current density of 270 and 530 A/$m^2$ Ni-Sn and Sn-Zn were codeposited in chloride-fluoride acid and stannate-cyanide alkaline electrolyte bath respectively. Ni-Sn alloy deposited at temperatures from 25$^{\circ}$ to 35$^{\circ}C$ was composed of single phase of $Ni_3Sn_4$ with 73 wt.% Sn and the one deposited at temperatures from 45$^{\circ}$ to 95$^{\circ}C$ was made of multiphase mixture of NiSn, $Ni_3Sn_2$ and $Ni_3Sn_4$ with nearly equiatomic composition (65.5 wt.% Sn). The random orientation of thermody-namically metastable NiSn phase (hexagonal structure) predominated at deposition temperature range 25$^{\circ}$-45$^{\circ}C$, and the strong (110) preferred orientation was found at 65$^{\circ}$-85$^{\circ}C$ and then disappeared again at 95$^{\circ}C$. The microhardness of Ni-Sn deposits increased with deposition temperature up to 85$^{\circ}C$, and then decreased at constant cathode current density. The preferred orientation and the maximum microhardness were discussed in terms of lattice contractile stress which result from desorption of hydrogen atom absorbed in deposit lattice. The Sn content of Sn-Zn alloy deposits increased with deposition temperature up to 75$^{\circ}C$, and then decreased at constant cathode current density of 530 A/$m^2$. It also decreased with cathode current density up to 530 A/$m^2$, and then increased at constant deposition temperature of 25$^{\circ}C$. Sn-Zn alloy deposits were composed of two-phase mixture of ${beta}$-Sn and Zn. The preferred orientations of ${beta}$-Sn (tetragonal structure) changed with deposition temperature. The microhardness of Sn-Zn deposits decreased with deposition temperature. It also increased with cathode density up to 530 A/$m^2$, and then decreased at constant deposition temperature of 25$^{\circ}C$. The microhardness of Sn-Zn deposits was observed to be determinded more by the Sn content than by the preferred orientation.

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