• 콘크리트학회논문집
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• 제28권4호
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• pp.489-496
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• 2016

최근, 건물의 자중을 저감시킴으로서 시공성을 향상시키기 위한 방안으로 중공 PC슬래브에 대한 관심이 높아지고 있다. 국내에서 생산되는 대표적인 중공 PC슬래브인 HCS는 생산방식 특성상 전단보강근의 배근이 어렵기 때문에 안전성 및 사용성 측면에서 문제가 제기되고 있다. 이와 같은 측면에서, 최근 새로운 형태의 부분 PC 슬래브 시스템인 Tripple Ribs Slab (TRS)가 개발되었다. TRS는 전단보강근의 배근이 가능한 하프PC형 중공슬래브이다. 본 연구에서는 TRS의 전단성능을 검토하기 위해 전단실험을 진행하였다. 시공단계별로 형성되는 단면조건에 대하여 비대칭 1점 가력으로 실험하였으며 실험결과 강도를 기준 식들과 비교하였다. 실험에서의 변수는 CIP 유무와 래티스바의 유무 또는 래티스바의 종류이다. 실험으로부터, TRS는 설계하중을 충분히 지지할 수 있는 전단성능을 가지고 있으며 실험체의 강도는 국내콘크리트구조기준에서 제시하는 일반식으로 적절하게 예측될 수 있는 것으로 나타났다. CIP가 타설되지 않은 시공단계에서는 래티스바의 기여도가 현저히 낮기 때문에 래티스바의 전단강도를 제외하고 설계하는 것이 바람직하다고 판단된다.

• Advances in nano research
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• 제1권1호
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• pp.59-70
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• 2013

ZnO nanostructures of rod-like, faceted bar, cup-end bars, and spindle shaped morphologies could be grown by a low power ultrasonic synthesis process. pH of the reaction mixture seems to plays an important role for defining the final morphology of ZnO nanostructures. While the solution pH as low as 7 produces long, uniform rod-like nanostructures of mixed phase (ZnO and $Zn(OH)_2$), higher pH of the reaction mixture produces ZnO nanostructures of different morphologies in pure hexagonal wurtzite phase. pH of the reaction as high as 10 produces bar shaped uniform nanostructures with lower specific surface area and lower surface and lattice defects, reducing the defect emissions of ZnO in the visible region of their photoluminescence spectra.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 한국구조물진단유지관리공학회 논문집
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• 제13권2호통권54호
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• pp.122-128
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• 2009

본 연구에서는 영구거푸집의 한 형태인 LB-DECK 패널을 적용하는 교량이 늘어남에 따라 LB-DECK 시공 중 하면주철근 및 하면배력근의 배근에 따른 시공성 저하요인을 해결하고자 하였다. 이에 따라 여러 가지 제시된 방안 중 설계 및 시공의 효율성을 검토하여 하면주철근 및 하면배력근을 LB-DECK 패널 내에 모두 배치하는 방안을 채택하여 개선단면을 도출하고 검증하였다. 검증 방법은 LB-DECK 패널의 개선 전 후에 대하여 정적재하실험을 통하여 하중에 따른 균열형상 및 처짐, 변형률을 비교하여 개선단면에 대한 내하력을 평가하였다. 그 결과 LB-DECK 패널의 경우 개선 전과 비교하여 약 13%, 슬래브의 경우 약 10%의 내하력이 증가하는 효과가 있는 것으로 분석되었다.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1997년도 춘계학술발표회논문집(1)
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• pp.45-50
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• 1997

The conventional MOX fuel shows adverse controllability in view of its neutronic characteristics such as decreased soluble boron worth and effective delayed-neutron fraction compared to the UO$_2$ fuel. In order to mitigate these disadvantages, we devised a new concept of the hybrid UO$_2$-MOX fuel pellet with dual structure such that its outer annular section contains. UO$_2$ fuel and its inner cylindrical bar contains MOX fuel. The lattice physics code HELIOS was used to evaluate the neutronic characteristics of three different types of fuel pellets ; UO$_2$ fuel pellet, MOX fuel pellet, and hybrid UO$_2$-MOX fuel pellet. Results show that the hybrid UO$_2$-MOX fuel pellet generally has intermediate neutronic tendency between UO$_2$ fuel and MOX which could diminish the problems arising from the use of the conventional MOX fuel.

• 한국결정학회지
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• 제14권1호
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• pp.7-12
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• 2003

화합물, SrAl₂(BO₃)₂O는 매우 효과적으로 열적 수축성을 나타내는 격자를 가지고 있다. 우리는 세라믹 시험편의 열팽창 계수측정법과 X-선 회절 분광법을 이용하여 제한된 온도 범위에서 열적 수축을 각각 측정하였다. 알루미늄 보레이트 화합물에 있어서, 열적 수축성은 23∼215℃ 온도 범위에서 c 축에 대한 열팽창 계수 -1.64×10/sup -4/ Å/℃를 보였으며, 20㎜ 세라믹 시험편에 대한 길이의 변화측정 결과는 110∼170℃ 온도 범위에서 최대 -1.75㎛까지 수축하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2006년도 춘계학술대회
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• pp.387-390
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• 2006

We report here that under strong attacksof external $CH_4$ guest molecules the sII and sH methane hydrates are structurally transformed to the crystalline me framework of sI, leading to favorable change of the lattice dimension of the host-guest networks. The High Power Decoupling $^{13}C$ NMR and Raman spectroscopies were used to identify structure transitions of the mixed $CH_4+C_2H_6$ hydrates (sIIl) and hydrocarbons (methylcyclohexane, isopentane) + $CH_4$ hydrates (sH). The resulting spectra indicate that most of the synthesized sII and sH hydrates were transformed to methane hydrate of sl under 110 bar and particularly the coexistence of sl with sII or sH appear according to the surrounding methane-rich gas conditions. The present findings might be expected to Provide rational evidences regarding the preponderant occurrence of naturally-occurring sI methane hydrates in marine sediments.

• 한국응용과학기술학회지
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• 제23권3호
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• pp.223-229
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• 2006

Methanol and formaldehyde were produced directly by the partial oxidation of methane over mixed oxide catalysts. The catalysts were composed of Mo and Bi with late-transition metals, such as Mn, Fe, and Co. The reaction was carried out at $450^{\circ}C$, 50 bar in a fixed-bed differential reactor. The prepared catalysts were characterized by $O_2-TPD$ and BET apparatus. Among the catalysts used, the catalyst composed of 1:1:2.5 molar ratio of Mo:Bi:Mn showed the best methane conversion and methanol selectivity. The change in ratio of methane to oxygen affected at the conversion and selectivity, and the most proper ratio was 10:1.5. Methane conversion, methanol and formaldehyde selectivities increased with the surface areas of the catalysts. From the $O_2-TPD$ result, it was found that the oxygen species responsible for this reaction might be the lattice oxygen species desorbed at high temperature around $800^{\circ}C$.

• 한국구조물진단유지관리공학회 논문집
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• 제16권1호
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• pp.89-98
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• 2012

일체형 삼각 트러스 형태의 철선을 아연도금 강판에 용접한 철선일체형 데크 플레이트는 슬래브 시공 시 현장시공 최소 및 동바리와 지보공 등 거푸집 공사비 절감을 목적으로 개발되어 이미 많은 현장에 적용되고 있다. 본 연구에서는 180mm 두께 슬래브에 적용 가능한 철선일체형 데크 플레이트 시스템을 개발하기 위해 실험적 연구를 수행하였다. 상부철선, 하부철선, 래티스 철선, 경간, 단부가공방법을 변수로 채택하여 총 14개의 시험체를 실물크기로 제작하여 실험을 수행하였다. 실험결과 시험체의 최종 파괴형태 변화 및 단부가공방법이 시험체의 구조 성능에 영향을 미치지 않는 것으로 나타났으며, 하부철선의 영향보다는 래티스 철선이 시험체의 거동에 큰 영향을 미치는 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.235-235
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• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.