• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.4
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• pp.171-174
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• 2004

The $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = $8.1686{\AA}$, b = $9.0425{\AA}$, c = $8.0065{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity was 1.080e-$3{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.134-136
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• 2004

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686 A, b = 9.0425 ${{\AA}}$, c = 8.0065 ${{\AA}}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.1
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• pp.28-31
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• 2004

The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1407-1409
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• 2003

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686, b=9.0425, c=8.0065. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}cm$ and electron mobility was $-5.4810^{3}cm^{2}$/Vsec at room temperature(RT).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.66-72
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• 2010

In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$ and 25.5[nm/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode.

• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.124-126
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• 2003

The results of investigations of $Ag_2Se$ single crystal is presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance a=4.1686 $\AA$, b=9.0425 $\AA$, c=8.0065 $\AA$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity values was $1.25{\times}10^3ohm^{-1}cm^{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).