• Geotechnical Engineering
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• v.1 no.1
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• pp.59-72
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• 1985

This paper deals with the numerical analysis by the (mite element method introducing Biot's theory of consolidation and the modified Cambridge model proposed by Roscoe school of Cambridge University as constitutive equation and using Christian-Boehner's technique. Especially, time interval and division of elements are investigated in vies of stability and economics. In order to check the validity of author's program, the program was tested with one-dimensional consolidation case followed by Terzaghi's exact solution and with the results of the Magnan's analysis for existing banking carried out for study at Cubzac-les-ports in France. The main conclusions obtained are summarized as follows: 1. In the case of one-dimensional consolidation, the more divided the elements are near the surface of the foundation, the higher the accuracy of the numerical analysis is. 2. For the time interval, it is stable to divide 20 times per 1-lg cycle. 3. At the element which has long drain distance, the Mandel-fryer effect appears due to time lag. 4. Lateral displacement at an initial loading stage predicted by author's program, in which the load was assumed as not concentrative. but rather in grid form, is well consistent with the value of observation. 5. The pore water pressure predicted by author's program has a better accordance with the value of observation compared with Magnan's results. 6. Optimum construction control by Matsuo-Kawamura's method is possible with the predicted lateral displacement and settlement by the program.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• Journal of Chest Surgery
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• v.40 no.12
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• pp.805-810
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• 2007

Background: This paper reviews our experience retrospectively to examine the clinical results and effectiveness of lateral tunnel (LT) and extracardiac conduit (ECC) Fontan procedures at a single institution. Material and Method: One hundred and sixty five Fontan procedures were performed (67 LT and 98 ECC) between January 1996 and December 2006. Preoperative and postoperative hemodynamic values, arrhythmia, hospital and intensive care unit stay, chest tube drain, morbidity and mortality were reviewed. Result: The overall operative mortality in the LT and ECC groups was 4.5% (3) and 2.0% (2), respectively. There was a significant difference in the immediate postoperative transpulmonary gradient (LT $8.5{\pm}2.5$ vs ECC $6.6{\pm}2.4$, p-value<0.001) and central venous pressure (LT $18.3{\pm}3.8$ vs ECC $15.6{\pm}2.4$, p-value=0.001) between the two groups. The mean follow-up in the LT and ECC groups was $74.1{\pm}31.5$ and $38.1{\pm}29.1$ months, respectively. There was one late death. The actuarial survival at 10 years in the LT and ECC groups was 92% and 89%, respectively. In arrhythmia, the ECC patients showed a slightly low incidence but the difference was not statistically significant. Conclusion: Both the LT and ECC Fontan procedures showed comparable early and mid-term outcomes in terms of the surgical morbidity and mortality, postoperative hemodynamics, and mid-term survival. The ECC Fontan procedure reduces the risk of arrhythmia in the follow up period.

• Journal of Korea Water Resources Association
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• v.55 no.11
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• pp.923-929
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• 2022

The Chuncheon Mullori area is an underprivileged area of water welfare where local water supply is not supplied, and it is supplying water to the villages with small water supply facilities using lateral flow and groundwater as water sources. This is an area with poor water supply conditions, such as relying on water trucks due to water shortages during the recent severe drought. Therefore, in order to solve the problem of water shortage during drought and to prepare for the increasing water demand, a sand dam was installed along the valley, and this facility has been operating since May 2022. In this study, repeated simulations were performed according to the hydraulic conductivity of the filler material and the storage coefficient value for the inflow condition for about two years from mid-March 2020 to mid-March 2022. For each case, the amount of discharge through the perforated drain pipe was calculated. Overall, as the hydraulic conductivity increased, the amount of discharge and its ratio increased. However, when the hydraulic conductivity of the second floor was relatively low, the amount of discharge increased and then decreased as the hydraulic conductivity of the third floor increased. This is considered to be due to the fact that the water level was kept low due to the rapid drainage compared to the net inflow into the third floor because the water permeability of the third floor and the drainage coefficient of the drain pipe were large. As a result of simulating the flow of the open channel in the upper part of the sand dam as a hypothetical groundwater layer with very high hydraulic conductivity, the decrease in discharge rate was slower than the increase in the hydraulic conductivity of the hypothetical layer, but it was clearly shown that the discharge volume decreased relatively as the hydraulic conductivity of the virtual layer increased.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.14-22
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• 2010

The source/channel/drain regions are formed by ion implantation with different dopant types of $n^+/p^{(+)}/n^+$ in the fabrication of the conventional n-type metal-oxide-semiconductor field effect transistor(NMOSFET). In implementing the ultra-small devices with channel length of sub-30 nm, in order to achieve the designed effective channel length accurately, low thermal budget should be considered in the fabrication processes for minimizing the lateral diffusion of dopants although the implanted ions should be activated as completely as possible for higher on-current level. Junctionless (JL) MOSFETs fully capable of the the conventional NMOSFET operations without p-type channel for enlarging the process margin are under researches. In this paper, the optimum design of the JL MOSFET based on silicon nanowire (SNW) structure is carried out by 3-D device simulation and the basic radio frequency (RF) characteristics such as conductance, maximum oscillation frequency($f_{max}$), current gain cut-off frequency($f_T$) for the optimized device. The channel length was 30 run and the design variables were the channel doping concentration and SNW radius. For the optimally designed JL SNW NMOSFET, $f_T$ and $f_{max}$ high as 367.5 GHz and 602.5 GHz could be obtained, respectively, at the operating bias condition $V_{GS}$ = $V_{DS}$ = 1.0 V).