• 제목/요약/키워드: Laser threshold

검색결과 309건 처리시간 0.028초

515nm 피코초 레이저를 이용한 구리 어블레이션 공정의 최대 가공율에 대한 이론적 분석 (Theoretical analysis on the maximum volume ablation rate for copper ablation with a 515nm picosecond laser)

  • 신동식;조용권;손현기;서정
    • 한국레이저가공학회지
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    • 제16권2호
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    • pp.1-6
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    • 2013
  • Picosecond lasers are a very effective tool for micromachining metals, especially when high accuracy, high surface roughness and no heat affected zone are required. However, low productivity has been a limit to broadening the spectrum of their industrial applications. Recently it was reported that in the micromachining of copper with a 1064nm picosecond laser, there exist the optimal pulse energy and repetition rate to achieve the maximum volume ablation rate. In this paper, we used a 515nm picosecond laser, which is more efficient for micromachining copper in terms of laser energy absorption, to obtain its optimal pulse energy and repetition rate. Theoretical analysis based on the experimental data on copper ablation showed that using a 515nm picosecond laser instead of a 1064nm picosecond laser is more favorable in that the calculated threshold fluence is 75% lower and optical penetration depth is 50% deeper.

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Nanosecond Laser Cleaning of Aluminum Alloy Oxide Film

  • Hang Dong;Yahui Li;Shanman Lu;Wei Zhang;Guangyong Jin
    • Current Optics and Photonics
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    • 제7권6호
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    • pp.714-720
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    • 2023
  • Laser cleaning has the advantages of environmental protection, precision, and high efficiency, and has good prospects for application in removing oxide films on the surface of aluminum alloy. This paper discusses the cleaning threshold and cleaning mechanism of aluminum alloy surface oxide film. A nanosecond pulsed laser was used to remove a 5-㎛-thick oxide film from the surface of 7A04 aluminum alloy, and the target surface temperature and cleaning depth were simulated. The effects of different laser energy densities on the surface morphology of the aluminum alloy were analyzed, and the plasma motion process was recorded using a high-speed camera. The temperature measurement results of the experiment are close to the simulation results. The results show that the laser cleaning of aluminum alloy oxide film is mainly based on the vaporization mechanism and the shock wave generated by the explosion.

펨토초 레이저를 이용한 폴리머 박막 재료 초미세 공정에 관한 연구 (Investigation on Femtosecond Laser Processing of Polymeric Thin Films)

  • 정세채
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.669-670
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    • 2006
  • Two-photon absorption coefficient of a series of dyes in polymer thin films was determined by measuring the femtosecond laser ablation threshold. The threshold value of polymeric thin films decreased gradually when the dopant increased. The two-photon absorption coefficient of the dye molecules dispersed in the polymer film was estimated by using the theoretical relationship between the ablation threshold of the blended polymeric thin films and the dye concentration. The relative values of two-photon absorption cross-section are in good agreement with those measured in solution. On the other hand, the absolute values are smaller than the latter.

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Material Dependence of Laser-induced Breakdown of Colloidal Particles in Water

  • Yun, Jong-Il
    • Journal of the Optical Society of Korea
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    • 제11권1호
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    • pp.34-39
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    • 2007
  • Laser-induced breakdown of colloidal suspensions, such as polystyrene, $ZrO_2$, and $SiO_2$ particles in diameters of 100-400 nm in water is investigated by nanosecond flash-pumped Nd:YAG laser pulses operating at a wavelength ${\lambda}$= 532 nm. The breakdown threshold intensity is examined in terms of breakdown probability as a function of laser pulse energy. The threshold intensity for $SiO_2$ particles ($1.27{\times}10^{11}\;W/cm^2$) with a size of 100 nm is higher than those for polystyrene and $ZrO_2$ particles with the same size, namely $5.7{\times}10^{10}$ and $5.5{\times}10^{10}\;W/cm^2$, respectively. Results indicate that the absorption of five photons is required to induce ionization of $SiO_2$ particles, whereas the other particles necessitate four-photon absorption. These breakdown thresholds are compared with those measured by nanosecond pulses from a diode-pumped Nd:YAG laser having a different focusing geometry.

액체의 상폭발 과정에 의한 펄스 레이저 용발률의 증진 (Enhancement of Pulsed-Laser Ablation by Phase Explosion of Liquid)

  • 김동식;이호
    • 대한기계학회논문집B
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    • 제25권11호
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    • pp.1483-1491
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    • 2001
  • Enhancement of pulsed-laser ablation by an artificially deposited liquid film is presented. Measurements of ablation rate, ablation threshold, and surface topography arc performed. Correlation between material ablation and photoacoustic effect is examined by the optical beam deflection method. The dependence of ablation rate on liquid-film thickness and chemical composition is also examined. The results indicate that photomechanical effect in the phase explosion of liquid is responsible for the enhanced ablation. The low critical temperature of liquid induces explosive vaporization with localized photoacoustic excitation in the superheat limit and increases the ablation efficiency. Experiments were carried out utilizing a Q-swiched Nd:YAG laser at near-threshold laser fluences with negligible plasma effect (up to ∼100 MW/cm$^2$).

Nd:YVO$_4$ 마이크로칩 레이저의 단일 종모드 동작 (Single Longitudinal Mode Operation in Nd:YVO$_4$ Microchip Laser)

  • 지명훈;김교준;이영우
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권6호
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    • pp.260-264
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    • 2002
  • We developed LD Pumped Nd:$VVO_4$ microchip laser with the cavity length of 1mm. The microchip laser output was 87.5㎽ at the wavelength of 1063.9nm with the input power of 241㎽ at the wavelength of 809nm. The slope efficiency was 40.7% and the threshold input power was 31.1㎽. We have also defined input power limit for the single longitudinal mode operation theoretically. It was 2.5 times larger than that of threshold input intensity. According to the results of simulation, the Nd:YVO$_4$ microchip laser can be operated with the maximum output of 15㎽ for the single longitudinal mode up to the input power of 77.75㎽.

펄스 Nd:YAG 레이저를 이용한 $\mu$-BGA 기판의 개별칩 분리 연구 (The singulation study of $\mu$-BGA(Ball Grid Array) board using a pulsed Nd:YAG laser)

  • 백광렬;이경철;이천
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.524-527
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    • 2000
  • In this paper, we have studied minimization of the burr which occurred after $\mu$-BGA(ball grid array) singulation process, singulation of the multilayer with a pulsed Nd:YAG(266, 532 nm) laser is used to cut the metal layer which doesn't well absorb laser beam. Especially, the photoresist and $N_2$blowing is effective to minimize of the surface demage and burr. In this experiment, the $N_2$ blowing reduces a laser energy loss by debris and suppress a surface oxidation. The SEM(scanning electron microscopes) and non-contact 3D inspector are used to measure cutting line-width and surface demage. The $\mu$-BGA singulation threshold energy is 75.0 J/cm$^2$at 30 ${\mu}{\textrm}{m}$/s scan speed.

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다층 PCB 기판의 미세 가공을 위한 UV레이저 어블레이션에 관한 연구 (A Study on UV Laser Ablation for Micromachining of PCB Type Substrate)

  • 장원석;김재구;윤경구;신보성;최두선
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 추계학술대회 논문집
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    • pp.887-890
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    • 1997
  • Recently micromachining using DPSSL(Diode Pumped Solid State Laser) with 3rd harmonic wavelength is actively studied in laser machining area. Micromachining using DPSSL have outstanding advantages as UV source comparing with excimer laser in various aspect such a maintenance cost, maskless machining, high repetition rate and so on. In this study micro-drilling of PCB type substrate which consists of Cu-PI-Cu layer was performed using DPSS Nd:YAG laser(355nm, wavelength) in vector scanning method. Experimental and numerical method(Matlab simulation, FEM) are used to optimize process parameter and control machining depth. The man mechanism of this process is laser ablation. It is known that there is large gap between energy threshold of copper and that of PI. Matlab simulation considering energy threshold of material is performed to effect of duplication of pulse and FEM thermal analysis is used to predict the ablation depth of copper. This study could be widely used in various laser micromachining including via hole microdrilling of PCB, and micromachining of semiconductor components, medical parts and printer nozzle and so on.

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광통신 모듈용 분포 귀환형 InGaAsP/InP 레이저 다이오드 제작 및 소자 특성평가 (Fabrication process and device characterization of distributed feedback InGaAsP/InP laser diodes for optical fiber communication module)

  • 전경남;김근주
    • 반도체디스플레이기술학회지
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    • 제10권4호
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    • pp.131-138
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    • 2011
  • We fabricated distributed feedback InGaAsP/InP laser diodes for optical fiber communication module and characterized the lasing properties in continuous wave operation. The active layer of 7-period InGaAsP(1.127 eV)/InGaAsP(0.954 eV) multi-quantum well structure was grown by the metal-organic chemical vapor deposition. The grating for waveguide was also fabricated by the implementation of the Mach-Zehender holographic method of two laser beams interference of He- Cd laser and the fabricated laser diode has the dimension of the laser length of $400{\mu}m$ and the ridge width of $1.2{\mu}m$. The laser diode shows the threshold current of 3.59 mA, the threshold voltage of 1.059 V. For the room-temperature operation with the current of 13.54 mA and the voltage of 1.12 V, the peak wavelength is about 1309.70 nm and optical power is 13.254 mW.

ITO Thin Film Ablation Using KrF Excimer Laser and its Characteristics

  • Lee, Kyoung-Chel;Lee, Cheon;Le, Yong-Feng
    • Transactions on Electrical and Electronic Materials
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    • 제1권4호
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    • pp.20-24
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    • 2000
  • This study aimed to develop ITO(Indium Tim Oxide) tin films ablation with a pulsed type KrF excimer laser required for the electrode patterning application in flat panel display into small geometry on a large substrate are. The threshold fluence for ablating ITO on glass substrate is about 0.1 J/㎠. And its value is much smaller than that using 3 .sup rd/ harmonic Nd:YAG laser. Through the optical microscope measurement the surface color of the ablated ITO is changed into dark brown due to increase of surface roughness and transformation of chemical composition by the laser light. The laser-irradiated regions were all found to be electrically isolating from the original surroundings. The XPS analysis showed that the relative surface concentration of Sn and In was essentially unchanged (In:Sn=5:1)after irradiating the KrF excimer laser. Using Al foil made by 2$\^$nd/ harmonic Na:YAG laser, the various ITO patterning is carried out.

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