• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.164-167
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• 1988

This paper reports optical properties and hole formation of a 488nm-optimumed trilayer structure utiluzed Te-based thin films as a recording layer, and the application of trilayer to 830nm. The optical recording characteristics of metallic recording media are enhanced significantly by incoporating the metal (Al) layer into an antireflection trilayer structure. Due to the interference condition inherent in the design of the trilayer structure, reflectance from holes is ranked a low fraction. the hole formation is carried out by laser by $Ar^+$ laser(488nm). For 20nsec laser pulse duration, the hole opening threshold power of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayor that used in this experiments. Hole shapes of the whole sample were clean. For the application of the diode laser, the thickness of dielectric is varied by$\lambda$/4n. In order to compare the monolayer with the trilayer reflectance was measured.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.248-251
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• 2009

We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{\circ}(Horizontal){\times}24.4^{\circ}$ (Vertical), 1313.8 nm, respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.657-658
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• 2006

Although there are many numerical models to simulate fs laser ablation of metals, no model can analyze the ablation phenomena over a wide range of fluence. In this work, a numerical code for simulating the fs laser ablation phenomena of metals has been developed. The two temperature model is employed to predict the ablation rate and the crater shape of metals using phase explosion mechanism in the relatively high fluence regime. Also, the ultrashort thermoelastic model is used for the low fluence regime to account for spallation of the sample by high strain rate. It has been demonstrated that the thermoelastic stress generated within the sample can exceed the yield stress of the material even near the threshold fluence. Numerical computation results are compared with the experiment for Cu and Ni and show good agreement. Discussions are made on the hydrodynamic model considering phase change and hydrodynamic flow.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.119-123
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• 2005

We report the random pattern characteristics of the super resolution near field structure(Super-RENS) write once read-many(WORM) disc at a blue laser optical system(laser wavelength 405nm, numerical aperture 0.85) and the Super-RENS read only memory(ROM) disc at a blue laser optical system(laser wavelength 659nm, numerical aperture 0.65). We used the WORM disc of which carrier-to-noise ratio (CNR) of 75nm is 47dB and ROM disc of which carrier-to-noise ratio (CNR) of 173nm is 45dB. We controlled the equalization (EQ) characteristics and used advanced partial-response maximum likelihood (PRML) technique. We obtained bit error rate (bER) of 10-3 level at 50GB WORM disc and bite error rate of 10-4 level at 50GB level ROM disc. This result shows high feasibility of Super-RENS technology for practical use.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.282-287
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• 1995

We have studied the characteristics of a cw Ti:sapphire laser pumped by an Ar-ion laser. Ti:sapphire is one of the most attractive materials for the generation of ultra-short pulses because of its very broad gain bandwidth. We used a 4.1 mm thick, 0.15 wt. % $Ti^{3+}$ -doped, Brewster-angled Ti:sapphire crystal and made a folded cavity to create a strong focusing mode. The folding angle of the cavity was adjusted to $15.4^{\circ}$ to compensate for the astigmatism from the Brewster-angled Ti:sapphire crystal. 5 WAr-ion laser was used as a pumping source. We observed that the Ti:sapphire cw output power was sensitively changed with respect to the condition of the folded cavity. The threshold pumping power was 2 Wand the slope efficiency was 16% when an output coupler of 10% transmission was used. The maximum output power was more than 450 mW at 5 W pumping. mping.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.459-462
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• 1999

Recent advances in NLO Borate Crystals for UV Generation are reviewed with the particular emphasis on the technique to improve the life time of UV optics. The laser-damage resistance of CLBO and fused silica surfaces was successfully improved after removing polishing compound by ion beam etching. The polishing compound embedded in the CLBO and fused silica surfaces were to a depth of less than 100nm. We were able to remove polishing compound without degrading the surface condition when the applied ion beam voltage was less than 200 V. The laser-induced surface damage threshold of CLBO was improved up to 15J/$\textrm{cm}^2$(wavelength: 355 nm, pulse width: 0.85 ns)as compared with that of the as-polished surface (11 J/$\textrm{cm}^2$). The laser-induced surface damage of fused silica also increased from 7.5J/$\textrm{cm}^2$ to 15J/$\textrm{cm}^2$. For the irradiation of a 266 nm high-intensity and high-repetition laser light, the surface lifetime of CLBO and fused silica could be more doubled compared with that of the as-polished surface.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.36-45
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• 1992

The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.50-54
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• 2018

In this study, a femtosecond laser pre-annealing technology based on indium zinc oxide (IZO) thin-film transistors (TFTs) was investigated. We demonstrated a stable pre-annealing process to analyze the change in the surface structures of thin-films, and we improved the electrical performance. Furthermore, static and dynamic electrical characteristics of IZO TFTs with n-channel inverters were observed. To investigate the static and dynamic responses of our solution-processed IZO TFTs, simple resistor-load-type inverters were fabricated by connecting a $1-M{\Omega}$ resistor. The femtosecond laser pre-annealing process based on IZO TFTs showed good performance: a field-effect mobility of $3.75cm_2/Vs$, an $I_{on}/I_{off}$ ratio of $1.8{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Our IZO-TFT-based N-MOS inverter performed well at operating voltage, and therefore, is a good candidate for advanced logic circuits and display backplane.

• Korean Journal of Optics and Photonics
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• v.9 no.4
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• pp.231-235
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• 1998

Passively Q-switched, laser diode(LD) end-pumped Nd:YAG laser was demonstrated by using $Cr^{4+}$:YAG as a saturable absorber. In addition , we could calculate an excitation efficiency, which is an important parameter to evaluate the pumping geometry, directly by measuring the absorbed power in Nd:YAG at threshold condition. We found that output parameters such as average power, pulse duration, and repetition rate strongly depended on the low intensity transmission of $Cr^{4+}$:YAG and driving current of lase diode. The maximum Q-switched output power of 1 W was obtained with 40 kHz repetition rate. The pulse duration was varied from 50 ns to 200 ns.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.6
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• pp.24-31
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• 2010

Laser carbonization of a polymer layer can be employed in various applications in the microelectronics industry, e.g repairing brightness pixels of an LCD panel. In this work, the process of thermal degradation of LCD color filter polymer by various laser sources with pulsewidths from CW to fs is studied. LCD pixels are irradiated by the lasers and the threshold irradiance of LCD color filter polymer carbonization is experimentally measured. In the numerical analysis, the transient temperature distribution is calculated and the number density of carbonization in the polymer layer is also estimated. It is shown that all the lasers can carbonize the polymer layers if the output power is adjusted to meet the thermal conditions for polymerization and that pulsed lasers can result in more uniform distribution of temperature and carbonization than the CW laser.