• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.61-63
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• 2008

Parallel femtosecond laser processing using a computer-generated hologram (CGH) displayed on a liquid crystal spatial light modulator (LCSLM) is demonstrated. The use of the LCSLM enables to perform an arbitrary and variable patterning. This holographic femtosecond laser processing has advantages of high throughput and high light-use efficiency. A critical issue is to precisely control the intensities of the diffraction peaks of the CGH. We demonstrate some methods for the control of the diffraction peaks. We also demonstrate the laser processing with two-dimensional and three-dimensional parallelism.

• Proceedings of the Korean Society of Laser Processing Conference
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• 1998.11a
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• pp.0-0
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• 1998

-Part I- As market needs become more various, the production of smaller quantities of a wider variety of products becomes increasingly important. In addition, in order to meet demands for more efficient production, long-term unmanned factory operation is prevailing at a remarkable pace. Within this context, laser machines are gaining increasing popularity for use in applications such as cutting and welding metallic and ceramic materials. FANUC supplies four models of $CO_2$ laser oscillators with laser power ranging from 1.5㎾ to 6㎾ on an OEM basis to machine tool builders. However, FANUC has been requested to produce laser oscillators that allow more compact and lower-cost laser machines to be built. To meet such demands, FANUC has developed six models of Slab type YAG laser oscillators with output power ranging from 150W to 2㎾. These oscillators are designed mainly fur cutting and welding sheet metals. The oscillator has an exceptionally superior laser beam quality compared to conventional YAG laser oscillators, thus providing significantly improved machining capability. In addition, the laser beam of the oscillator can be efficiently transmitted through quartz optical fibers, enabling laser machines to be simplified and made more compact. This paper introduces the features of FANUC’s developed Slab type YAG laser oscillators and their applications. - Part II - All-solid-state lasers employing laser diodes (LD) as a source of pumping solid-state laser feature high efficiency, compactness, and high reliability. Thus, they are expected to provide a new generation of processing tools in various fields, especially in automobile and aircraft industries where great hopes are being placed on laser welding technology for steel plates and aluminum materials for which a significant growth in demand is expected. Also, in power plants, it is hoped that reliability and safety will be improved by using the laser welding technology. As in the above, the advent of high-power all-solid-state lasers may not only bring a great technological innovation to existing industry, but also create new industry. This is the background for this project, which has set its sights on the development of high-power, all-solid-state lasers with an average output of over 10㎾, an oscillation efficiency of over 20%, and a laser head volume of below 0.05㎥. FANUC Ltd. is responsible for the research and development of slab type lasers, and TOSHIBA Corp. far rod type lasers. By pumping slab type Nd: YAG crystal and by using quasi-continuous wave (QCW) type LD stacks, FANUC has already obtained an average output power of 1.7㎾, an optical conversion efficiency of 42%, and an electro-optical conversion efficiency of 16%. These conversion efficiencies are the best results the world has ever seen in the field of high-power all-solid-state lasers. TOSHIBA Corp. has also obtained an output power of 1.2㎾, an optical conversion efficiency of 30％, and an electro-optical conversion efficiency of 12%, by pumping the rod type Nd: YAG crystal by continuous wave (CW) type LD stacks. The laser power achieved by TOSHIBA Corp. is also a new world record in the field of rod type all-solid-state lasers. This report provides details of the above results and some information on future development plans.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.99-104
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• 1990

The hetero-epitaxial growth of AmB v type onto-electronic material is attempted by means of the laser-induced chemical vapour deposition technique. The bimolecular gas phase reaction of trimethylgallium with ammonia on (001) alumina substrate for the epitaxy of gallium nitride is chosen as a model system. In this study, ArF exciter laser (193nm) is employed as a photon source. Marked difference is found in nucleation and in subsequent crystal incorporation between the doposits formed with and without the laser-irradiation. The surface coverage with isomorphically grown drystallites is pronounced upon "volume-excited" irradiation in comparison with the conventional thermal process. As to the crystal structure of the grown layers, the laser-induced deposits of GaN may be represented by either of the following two models: (001) plane of sapphire //y (001) plane of wurtzite-type GaN, OR (001) plane of sapphire//(001) plane of wurtzite-type-GaN (111) plane of twinned zinc blende-type GaN.

• Journal of Magnetics
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• v.17 no.4
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• pp.251-254
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• 2012

The electron paramagnetic resonance (EPR) of the $Eu^{2+}$ ion in $SrCl_2$:Eu single crystal has been investigated using an X-band spectrometer. The angular dependence of magnetic resonance positions for the $Eu^{2+}$ impurity ion in the crystallographic aa-plane is analyzed with effective spin-Hamiltonian. The EPR spectra of the isolated $Eu^{2+}$ center merged to each other. The hyperfine splitting of the isolated $Eu^{2+}$ center due to the $^{151}Eu$ nucleus is approximately 35 G. Three kinds of $Eu^{2+}$ centers except the isolated $Eu^{2+}$ center, $Eu^{2+}$ pairs, $Eu^{2+}$ triples, and other $Eu^{2+}$ clusters, are split from the fitting of the integrated experimental spectrum with the Gaussian curve. The calculated spectroscopic splitting parameters of the $Eu^{2+}$ pairs, $Eu^{2+}$ triples, and other $Eu^{2+}$ clusters in $SrCl_2$:Eu crystal are $g_1$ = 2.06, $g_2$ = 1.94, and $g_3$ = 1.93, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.539-543
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• 1998

The relationship of growth-in defects such as crystal originated particles (COP), flow pattern defects(FPD), laser scattering tomography defects (LSTD) was investigated in Cz-Si single crystals which had different pulling speed during crystal growing. It is concluded that the density and radial distribution of grown-in defects is strongly dependent on the pulling speed. And as the generation areas of these grown-in defects in a wafer are identical in radial position, they can be generated from same origin during crystal growing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.1-4
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• 2008

The growth of composite-structured Nd:$GdVO_4$ single crystal rods by the double die EFG method is reported. Two crucibles are combined with an outer and inner die for ascending of different melt. The composite-structured Nd:$GdVO_4$ single crystal rods with a length of 50 mm and an outer diameter of 5 mm including of inner Nd-doped core region with diameter 3 mm were grown successfully. Nd distribution in the, radial direction has graded profile from result of EPMA. Absorption coefficient in the core region at 808 nm was $42cm^{-1}$. Finally, we demonstrated the laser oscillation using our composite crystal and 2-W output was obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.187-198
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• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.352-357
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• 2007

Since a pattern defects "repair" system using a diode pumped solid state laser for Flat Panel Display (FPD) was suggested, a lot of laser systems have been explored and developed for mass-production microfabrication process. A maskless lithography system using 405 nm violet laser and Digital Micromirror Device (DMD) has been developed for PDP and Liquid Crystal Display (LCD) Thin Film Transistor (TFT) photolithography process. In addition, a "Laser Direct Patterning" system for Indium Tin Oxide (ITO) for Plasma Display Panel(PDP) has been evaluated one of the best successful examples for laser application system which is applied for mass-production lines. The "heat" and "solvent" free laser microfabrications process will be widely used because the next-generation flat panel displays, Flexible Display and Organic Light Emitting Diode (OLED) should use plastic substrates and organic materials which are very difficult to process using traditional fabrication methods.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.157-161
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• 1990

Self-pumped phase conjugation(SPPC) in BaTiO3 single crystal is experimentally investigated at a wavelength of 514.5nm from an Ar+ laser. The incident Gaussian beam enters the crystal as an extraordinary ray. The maximum SPPC reflectivity of 48% is obtained at incident angle 80 degree. the SPPC wave demonstrates good image reconstruction. The response time (r) of SPPC wave as a function of incident intensity is measured to be r=36$\times$I-0.79sec.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.323-328
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• 2002

The model of the shortest chemical bonds is applied for the classification of acentric simple and binary Mo(VI) and W(VI) oxides. It is shown that on the plane of the shortest chemical bonds the compounds are located into the rosette of three intersected ellipses. The correlation between the optical nonlinearity and combination of the bond lengths is discussed.