• Journal of Embryo Transfer
• /
• v.27 no.1
• /
• pp.37-43
• /
• 2012

This study evaluated a method of sorting X and Y chromosomes based on size using the forward angle light scatter related refractive index (FSC) of a flow cytometer. Hanwoo bulls sperm were separated to X and Y chromosomes by the parameters of FSC or Hoechst 33342 intensity. As a result, using monitor program linked flow cytometry during sorting processing, the purities were $97{\pm}0.57$ or $96{\pm}0.67%$ for the X-fraction and $96{\pm}0.33$ or $97{\pm}1.33%$ for the Y-fraction in the two sperm sorting methods. There were no differences in the X and Y ratios (X and Y %) between the sperm sorting methods based on FSC or DNA content. The proportions of female and male embryos used for in vitro fertilization and development were $66.03{\pm}3.31$ or $69.37{\pm}1.41%$, and $70.56{\pm}2.42$ or $56.11{\pm}3.09%$ when sperm were processed using the sex sorting method by FSC or Hoechst 33342. In conclusion, further study is needed to determine the optimum procedure and improve the nozzle to enhancing sorting accuracy or efficiency. Also, the findings of this study do not negate the possibility that the difference method of sperm sorting cannot use a UV laser beam.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.4
• /
• pp.224-229
• /
• 2006

There has been studied flow to minimize the spot size to increase data capacity. Optical data storage devices are being developed near practical limits with wavelength and NA of 405nm and 0.85. There has been studied many types of next generation storage devices such as blu-ray multilayer system, probe based data storage and holographic data storage. Among these data storage devices, solid immersion lens(SIL) based near field recording (NFR) has been widely studied. In this system, SIL is the key component that focuses the laser beam with a very small size which enables ultra high data capacity. Therefore, optical performance evaluation system is required for SIL assembly. In this dissertation, a simple and accurate SIL assembly measurement method is proposed with wedge plate lateral shearing interferometer(LSI). Wedge plate LSI is cheaper than commercialized interferometer, robust to the vibration and the moving distance for phase shifting is large that is order of micrometer. We designed the thickness, wedge angle, material, surface quality and wavelength of wedge plate as 1mm, 0.02degree, fused silica, lamda/10(10-5) and 405nm, respectively. Also, we confirmed simulation and experimental results with quantitative analysis. This simple wedge plate LSI can be applied to different types of SIL such as solid immersion mirror(SIM), hemispherical, super-hemispherical and elliptical SIL.

• Journal of the Optical Society of Korea
• /
• v.19 no.6
• /
• pp.566-574
• /
• 2015

We report for the first time highly efficient trans-reflective color filters capable of demonstrating coloration in both transmission and reflection modes by taking advantage of a multilayer stack consisting of MgF₂ and TiO₂ used respectively as the low and high index materials. In order to enable such trans-reflective performance, securing an optimal stop band assuming an appropriate bandwidth within the visible regime is pivotal, which was realized by tailoring the thicknesses and the numbers of TiO₂-MgF₂ bi-layers. Three devices were designed through rigorous simulations and developed via e-beam evaporation to demonstrate vivid blue, green, and red colors in the reflection mode, and yellow, magenta, and cyan colors in the transmission mode, featuring an enhanced efficiency exceeding 90% under normal incidence. The color performance of the filters was examined by referring to the chromaticity coordinates of the transmission and reflection spectra, alongside photographed color images. The dependence of the performance on the angle of incidence was explored with respect to incident polarization, indicating that a transmission surpassing 60% could be stably maintained up to an angle of 75°. Polarization independent transfer characteristics were especially achieved for the normal incidence. The proposed devices may be readily extended to other spectral regimes by adjusting the thicknesses of the films.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.99.1-99.1
• /
• 2012

The thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ~104 $cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia, temperature which strongly affect on the morphology of CZTS film.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.291-291
• /
• 2011

1차원 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si(111) 기판 위에 Ga-droplet을 촉매로 사용을 하여 molecular beam epitaxy로 성장을 하였다. 성장온도는 600$^{\circ}C$로 고정을 하였고 growth rate은 GaAs(100) substrate에서 2.5 A/s로 Ga의 양을 고정하고 V/III ratio를 1부터 8까지 변화를 시켰다. As의 양에 따라서 생성되는 NWs의 개수가 증가하고 growth rate이 빨라지는 것을 확인할 수 있었다. Transmission Electron Microscopy 분석 결과 낮은 V/III ratio에서는 zincblende, wurtzite 그리고 stacking faults 가 혼재 되어 있는 것을 확인 할 수 있었다. 이러한 결함은 소자를 만드는데 한계가 있기 때문에 pure zincblende나 pure wurtzite를 가져야 하는데 V/III ratio : 8 에서 pure zincblende구조가 되었다. Gibbs-Thomson effect에 따르면 구조적 변화는 Ga droplet과 NWs의 접면에서 크기가 중요한 역할을 한다[1]. 연구 결과 V/III ratio : 8일 때 Ga droplet의 크기가 zincblende성장에 알맞다는 것을 예상할 수 있었다. laser confocal photoluminescence 결과 상온에서 1.43 eV의 bandgap을 가지는 bulk구조와는 다른 와 1.49eV의 bandgap을 가지는 것을 확인하였다.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.25 no.9
• /
• pp.1400-1409
• /
• 2001

This paper describes a fiber optic sensor suitable for non-contact detection of ultrasonic waves. This sensor is based on a fiber optic Sagnac interferometer. Quadrature phase bias between two interfering laser beams in Sagnac loop is introduced by a polarization controller. A stable quadrature phase bias can be confirmed by observing the interferometer output versus phase bias. This method eliminates a digital signal processing for detection of ultrasonic waves using Sagnac interferometer. Interference intensity is affected by the frequency of ultrasonic waves and the time delay of Sagnac loop. Collimator is attached to the end of the probing fiber to focus the light beam onto the specimen surface and to collect the reflected light back into the fiber probe. Ultrasonic waves produced by conventional ultrasonic transducers are detected. This fiber optic sensor based on Sagnac interferometer is very effective for detection of small displacement with high frequency such as ultrasonic waves used in conventional non-destructive testing.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.187-187
• /
• 2013

양자점(Quuantum dot, QD)은 0차원 특성을 가지는 구조로 양자 구속 효과로 인하여 bulk와 는 다른 구조적, 광학적, 전기적 특성을 가지고 있다. InAs QD는 size와 barrier의 bandgap 조절을 이용하여 쉽게 bandgap을 바꿀 수 있는 장점이 있어 solar cell, semiconductor laser diode, infrared photodetector 등으로 많은 연구가 이루어지고 있다. 일반적으로 Stranski-Krastanov (SK) mode로 성장한 InAs QD는 보통 GaAs epilayer와의 lattice mismatch (7%)를 이용하여 성장을 하고 이로 인하여 strain을 가지고 있고 QD의 density와 stack이 높을수록 strain이 커진다. 하지만 sub-monolayer (SML) QD 같은 경우 wetting layer가 생기는 지점인 1.7 ML이하에서 성장되는 성장 방식으로 SK-QD보다는 작은 strain을 가지게 된다. 또 QD의 size가 작아 SK-QD보다 큰 bandgap을 가지고 있다. 본 연구에서는 분자선 에피택시(molecular beam epitaxy, MBE)를 이용하여 semi-insulating GaAs substrate 위에 InAs QD를 0.5/1/1.5/1.7/2/2.5 monolayer로 성장을 하였다. GaAs과 InAs의 성장온도와 성장속도는 각각 $590^{\circ}C$, 0.8 ML/s와 $480^{\circ}C$, 0.2 ML/s로 성장을 하였으며 적층사이의 interruption 시간은 10초로 고정하였고 10주기를 성장하였다. Photoluminescence (PL)측정 결과 SML-QD는 size에 따라서 energy가 1.328에서 1.314 eV로 약간 red shift를 하였고 SK-QD의 경우 1.2 eV의 energy정도로 0.1 eV이상 red shift 하였다. 이는 QD size에 의하여 energy shift가 있다고 사료된다. 또 wetting layer의 경우 1.41 eV의 energy를 가지는 것으로 확인 하였다. SML-QD는 SK-QD 보다 반치폭(full width at half maximum, FWHM)이 작은 것은 확인을 하였고 strain field의 감소로 해석된다. 하지만 SML-QD의 경우 SK-QD보다 상대적으로 작은 PL intensity를 가지고 있었다. 이를 개선하기 위해서는 보다 높은 QD density를 요구하게 되는데 growth temperature, V/III ratio, growth rate 등을 변화주어서 연구할 계획이다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.658-658
• /
• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Physical Therapy Rehabilitation Science
• /
• v.4 no.1
• /
• pp.49-54
• /
• 2015

Objective: Cervical stabilization exercises are frequently to improve strength and endurance of cervical muscles. The purpose of this study was to identify changes in head repositioning accuracy (HRA) and neck proprioception through cervical stabilization exercises in healthy adults. Design: One group pretest-posttest design. Methods: Thirteen participants with no previous history of neck pain or injury to the cervical spine were recruited. HRA was measured by equipment including laser pointer, helmet, eye patch and marking pens. The distance between the spot where the beam had stopped and the center of the graph paper was measured three times with the averaged value used as the head repositioning accuracy. Neck proprioception was measured by a cervical range of motion device (CROM). Subjects wore the CROM tester and were to look straight ahead while bending his/her neck. Subjects were instructed to perform extension, lateral flexion and rotation, and the values were then measured and recorded. The measurements were performed pre-intervention, and after cervical stabilization exercise. Results: There was no significant difference on HRA after intervention. In addition, there was no significant difference on neck proprioception compared with pre-intervention. Conclusions: The present study did not identify any effect on HRA and neck proprioception of cervical stabilization exercise. Further investigations are required to elucidate this in old aged participants and patients with neck pain.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.10
• /
• pp.461-466
• /
• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.