• Title/Summary/Keyword: Laser Energy

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Experimental Investigation of Horizontal Buoyant Discharges from a Rosette-type Riser Using LIF System

  • Kwon, Seok Jae;Seo, Il Won;Kim, Ho Jung
    • Proceedings of the Korea Water Resources Association Conference
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    • 2004.05b
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    • pp.463-467
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    • 2004
  • Rosette-type diffusers with four-ports per riser are constructed in relatively shallow water in Korea. However, the trajectorial bending phenomena due to lower-pressure inside the surrounded buoyant jets on the riser was not considered in most models and was not observed without any experimental results. The buoyant jet behavior affected by the bending effect where there have been growing interests need to be verified experimentally and need to be preceded in the analysis of the characteristics of the buoyant jets oil a riser. The hydraulic model experiments have been carried out to investigate the characteristics of the behavior of horizontal buoyant jets discharged from a Rosette-type riser with four ports as well as single port over a certain range of the experimental conditions including initial momentum and initial buoyancy using LIF (Laser Induced Fluorescence) system to obtain concentration fields. The intensity of the fluorescent light in each pixel on the images obtained from LIF system with the tracer of Rhodamine H was converted to the local dye concentration with a set of calibration procedures to account for the non-uniform distribution of light intensity and the attenuation of light energy by water medium. The experimental results shows that the trajectories from Your ports tend to bend more and more to the inner side with the increase of the densimetric Froude number while the buoyant jet from a single port rises up without any bending phenomena. The previous models, VISJET and Seo et al. (2002), do not simulate the trajectories well except the region before the bending section. This study will focus on the analysis of the behavior of the buoyant jets for mainly a Rosette-type riser by conducting hydraulic model experiments using LIF system.

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AlN를 도핑시킨 ZnO박막의 전기적 및 광학적 특성

  • Son, Lee-Seul;Kim, Gyeom-Ryong;Lee, Gang-Il;Jang, Jong-Sik;Chae, Hong-Cheol;Gang, Hui-Jae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.88-88
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    • 2011
  • ZnO는 직접 천이형 반도체로써, 상온에서 3.4eV에 해당하는 띠틈을 가지고 있다. 뿐만 아니라 60meV의 큰 엑시톤 결합에너지를 가지고 있어 단파장 광전 소자 영역의 LED(Light Emitting Diode)나 LD(Laser Diode)에 널리 사용되고 있다. 하지만 일반적으로 격자틈새 Zn(Zni2+)이온이나 O 빈자리(V02+)이온과 같은 자연적인 도너 이온이 존재하여 n-형 전도성을 나타낸다. 그러므로 ZnO계 LED와 LD의 개발에 있어서 가장 중요한 연구 과제는 재현성 있고 안정된 고농도의 p-형 ZnO박막을 성장시키는 것이다. 하지만, 자기보상효과나 얕은 억셉터 준위, 억셉터의 낮은 용해도로 인하여 어려움을 가지고 있다. 본 연구에서는 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O2분위기에서 성장시켰다. ZnO와 AlN타겟을 동시에 사용하였으며, ZnO타겟에 걸어준 RF 파워는 80W, AlN타겟에 걸어준 RF 파워는 5~20W로 변화시켰다. 박막의 전기적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy), XRD (X-ray Diffraction), SIMS (Secondary Ion Mass Spectrometry), AES (Auger Electron Spectroscopy), Hall measurement를 이용하여 연구하였다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p3/2와 O1s피크는 undoped ZnO박막의 피크보다 낮은 결합에너지에서 측정되었다. 모든 박막이 결정화 되었으며, (002)방향으로 우선적으로 성장된 것을 확인할 수 있었다. 홀 측정 결과, 기판을 $200^{\circ}C$로 가열하면서 성장시킨 박막이 p-형을 나타내었으며, 비저항(Resistivity)이 $5.51{\times}10^{-3}{\Omega}{\cdot}m$, 캐리어 농도(Carrier Concentration)가 $1.96{\times}1018cm^{-3}$, 이동도(Mobility)가 $481cm^2$/Vs이었다. 또한 QUEELS -Simulation에 의한 광학적 특성분석 결과, 가시광선영역에서 투과율이 90%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여주었다.

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Influence of Oxygen Partial Pressure on ZnO Thin Films for Thin Film Transistors

  • Kim, Jae-Won;Kim, Ji-Hong;Roh, Ji-Hyoung;Lee, Kyung-Joo;Moon, Sung-Joon;Do, Kang-Min;Park, Jae-Ho;Jo, Seul-Ki;Shin, Ju-Hong;Yer, In-Hyung;Koo, Sang-Mo;Moon, Byung-Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.106-106
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    • 2011
  • Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

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Preparation and Characterization of Suvarna Bhasma Parada Marit - Characterization of Suvarna Bhasma Parada Marit -

  • Thakur, Kapil;Gudi, Ramacharya;Vahalia, Mahesh;Shitut, Shekhar;Nadkarni, Shailesh
    • Journal of Pharmacopuncture
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    • v.20 no.1
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    • pp.36-44
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    • 2017
  • Objectives: The goal of this study was to characterize Suvarna Bhasma Parada Marit by using the Ayurvedic test parameters, physico-chemical tests, and various instrumentation techniques. Methods: Suvarna Bhasma, an Ayurvedic formulation manufactured as per Bharat Bhaishajya Ratnakar 5/8357 (BBR), has been studied using various instrumentation techniques: X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), laser particle size distribution (PSD) analysis, fourier transform infrared spectroscopy (FT-IR), and atomic absorption spectroscopy (AAS), and physico-chemical parameters, such as the loss on drying (LOD), loss on ignition (LOI), and acid insoluble Ash (AIA) were determined. In addition, Ayurvedic tests, such as Rekhapurnatva (enterable in the furrows of the fingers), Varitaratwa (floatable over water), Nirdhoomta (smokeless), Dantagre Kach-Kach (gritty particle feeling between the teeth), were performed. Results: The XRD study showed Suvarna Bhasma to be crystalline in nature and to contain more than 98% gold. The mean size of the gold crystallites was less than 10 microns, and the morphology was globular and irregular. Suvarna Bhasma contains gold as its single and major element, with EDAX and FT-IR spectra showing that it is more than 98% pure gold. The moisture content (LOD) is less than 0.5%, the LOI is less than 2%, and the AIA is not less than 95%. The Ayurvedic tests, as specified above, helped to confirm the quality of Suvarna bhasma prepared as per the text reference (BBR). Conclusion: This chemical characterization of Suvarna Bhasma performed in this study by using modern instrumentation techniques will be helpful in understanding its pharmacological actions and will help in establishing quality protocols and specifications to substantiate the safety, efficacy & quality of Suvarna Bhasma.

In vivo comparison between the effects of chemically modified hydrophilic and anodically oxidized titanium surfaces on initial bone healing

  • Lee, Hyo-Jung;Yang, Il-Hyung;Kim, Seong-Kyun;Yeo, In-Sung;Kwon, Taek-Ka
    • Journal of Periodontal and Implant Science
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    • v.45 no.3
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    • pp.94-100
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    • 2015
  • Purpose: The aim of this study was to investigate the combined effects of physical and chemical surface factors on in vivo bone responses by comparing chemically modified hydrophilic sandblasted, large-grit, acid-etched (modSLA) and anodically oxidized hydrophobic implant surfaces. Methods: Five modSLA implants and five anodized implants were inserted into the tibiae of five New Zealand white rabbits (one implant for each tibia). The characteristics of each surface were determined using field emission scanning electron microscopy, energy dispersive spectroscopy, and confocal laser scanning microscopy before the installation. The experimental animals were sacrificed after 1 week of healing and histologic slides were prepared from the implant-tibial bone blocks removed from the animals. Histomorphometric analyses were performed on the light microscopic images, and bone-to-implant contact (BIC) and bone area (BA) ratios were measured. Nonparametric comparison tests were applied to find any significant differences (P<0.05) between the modSLA and anodized surfaces. Results: The roughness of the anodized surface was $1.22{\pm}0.17{\mu}m$ in Sa, which was within the optimal range of $1.0-2.0{\mu}m$ for a bone response. The modSLA surface was significantly rougher at $2.53{\pm}0.07{\mu}m$ in Sa. However, the modSLA implant had significantly higher BIC than the anodized implant (P=0.02). Furthermore, BA ratios did not significantly differ between the two implants, although the anodized implant had a higher mean value of BA (P>0.05). Conclusions: Within the limitations of this study, the hydrophilicity of the modSLA surface may have a stronger effect on in vivo bone healing than optimal surface roughness and surface chemistry of the anodized surface.

Characteristics of two extended-cavity diode lasers phase-locked with a 9.2 CHz frequency offset (9.2 GHz 주파수 차이로 위상잠금된 두 외부 공진기 다이오드 레이저의 제작 및 특성 조사)

  • Kwon, Taek-Yong;Shin, Eun-Ju;Yoo, Dae-Hyuk;Lee, Ho-Sung;In, Min-Kyo;Cho, Hyuk;Park, Sang-Eon
    • Korean Journal of Optics and Photonics
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    • v.13 no.6
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    • pp.543-547
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    • 2002
  • We have constructed two extended-cavity diode lasers which are phase-locked with a 9.2 GHz frequency offset. We adopted a digital servo circuit for the phase-locking. The relative linewidth of the phase-locked lasers was less than 2 Hz. Using the measured beat spectrum, we found the carrier concentration to be about 93 %. We measured phase noise and relative frequency stability of the lasers. The Allan deviation at the gate time of 20 s was $2.7{\times}10^{-19}$.

Synthesis and Characterization of CZTS film deposited by Chemical Bath Deposition method

  • Arepalli, Vinaya Kumar;Kumar, Challa Kiran;Park, Nam-Kyu;Nang, Lam Van;Kim, Eui-Tae
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.99.1-99.1
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    • 2012
  • The thin-film photovoltaic absorbers (CdTe and $Cu(In,Ga)Se_2$) can achieve solar conversion efficiencies of up to 20% and are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as $Cu_2ZnSnS_4$ (CZTS) is an emerging solar absorber that is structurally similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ~104 $cm^{-1}$. The CZTS absorber layers are grown and investigated by various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol-gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia, temperature which strongly affect on the morphology of CZTS film.

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Effect of Ga Addition on the Electrical and Structural Properties of (Zn,Mg)O Transparent Electrode Films (Ga 첨가량이 (Zn,Mg)O 투명전극 막의 전기적, 결정학적 특성에 미치는 영향)

  • Suh, Kwang-Jong;Wakahara, Akihiro;Yoshida, Akira
    • Korean Journal of Materials Research
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    • v.15 no.8
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    • pp.491-495
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    • 2005
  • (Zn,Mg)O (ZMO) thin films doped with Ga $(0\~0.03mol\%)$ in the target source were prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$, and the effect of Ga contents on the properties of the electrical, optical and crystal properties of the deposited films was investigated. From X-ray diffraction patterns, ZMO film doped with $0.02 mol\%$ Ga showed crystal structure with c-axis preferred orientation, showing only the (0002) and (0004) diffraction peaks. In contrast, ZMO film doped with $Ga=0.03 mol\%$ showed a randomly oriented crystal structure. All the samples were highly transparent, showing the transmittance values of above $85\%$ in the visible region. For all the Ga doped ZMO films, the value of energy band gap was found to be about 3.5 eV, regardless of their Ga contents. From the Hall measurements, the resistivity and the carrier density for the ZMO film doped with $0.01 mol\%$ Ga were about $5\times10^{-4}\Omega-cm$ and $2\times10^{21}cm^{-3}$, respectively.

Temperature-Dependent Hydrolysis Reactions of U(VI) Studied by TRLFS

  • Lee, J.Y.;Yun, J.I.
    • Journal of Nuclear Fuel Cycle and Waste Technology
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    • v.1 no.1
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    • pp.65-73
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    • 2013
  • Temperature-dependent hydrolysis behaviors of aqueous U(VI) species were investigated with time-resolved laser fluorescence spectroscopy (TRLFS) in the temperature range from 15 to $75^{\circ}C$. The formation of four different U(VI) hydrolysis species was measured at pHs from 1 to 7. The predominant presence of $UO{_2}^{2+}$, $(UO_2)_2(OH){_2}^{2+}$, $(UO_2)_3(OH){_5}^+$, and $(UO_2)_3(OH){_7}^-$ species were identified based on the spectroscopic properties such as fluorescence wavelengths and fluorescence lifetimes. With an increasing temperature, a remarkable decrement in the fluorescence lifetime for all U(VI) hydrolysis species was observed, representing the dynamic quenching behavior. Furthermore, the increase in the fluorescence intensity of the further hydrolyzed U(VI) species was clearly observed at an elevated temperature, showing stronger hydrolysis reactions with increasing temperatures. The formation constants of the U(VI) hydrolysis species were calculated to be $log\;K{^0}_{2,2}=-4.0{\pm}0.6$ for $(UO_2)_2(OH){_2}^{2+}$, $log\;K{^0}_{3,5}=-15.0{\pm}0.3$ for $(UO_2)_3(OH){_5}^+$, and $log\;K{^0}_{3,7}=-27.7{\pm}0.7$ for $(UO_2)_3(OH){_7}^-$ at $25^{\circ}C$ and I = 0 M. The specific ion interaction theory (SIT) was applied for the extrapolation of the formation constants to infinitely diluted solution. The results of temperature-dependent hydrolysis behavior in terms of the U(VI) fluorescence were compared and validated with those obtained using computational methods (DQUANT and constant enthalpy equation). Both results matched well with each other. The reaction enthalpies and entropies that are vital for the computational methods were determined by a combination of the van't Hoff equation and the Gibbs free energy equation. The temperature-dependent hydrolysis reaction of the U(VI) species indicates the transition of a major U(VI) species by means of geothermal gradient and decay heat from the radioactive isotopes, representing the necessity of deeper consideration in the safety assessment of geologic repository.

A Study on the Optical Bistable Characteristic of a Multi-Section DFB-LD (다전극 DFB-LD의 광 쌍안정 특성에 관한 연구)

  • Kim, Geun-Cheol;Jeong, Yeong-Cheol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.8
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    • pp.1-11
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    • 2002
  • A multi-section DFB-LD shows optical bistability subject to externally injected light signal, then it has potential applications such as wavelength conversion and optical logic gates. In this paper, we have studied the optical bistability in multi-section DFB-LD using split-step time-domain model. It is confirmed that the multi-section DFB-LD, which is excited inhomogeneously, shows bistability. The optical bistable characteristics are investigated when input light is injected into a absorptive region. Simulation results show that multi-section DFB-LD works as a flip-flop depending on the set-reset optical pulse which has a few ns in switching time and a few pj in switching energy, so that it can act as a optical logic device. Besides, if we change the carrier lifetime and the differential gain coefficient, it is expected that the response time of optical output signal can be reduced.