• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.163-164
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and corning glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S in $600{\AA}$, $10{\sim}5{\AA}/s$. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.130-131
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and coming glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S 600 $\AA$, 10~5 $\AA$/s. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• Progress in Superconductivity
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• v.11 no.2
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• pp.141-146
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• 2010

Phase stability diagram and boundary of a- and c-axis orientation of $SmBa_2Cu_3O_{7-y}$ (SmBCO) thin films grown by pulsed laser deposition (PLD) were reported with studies based on x-ray diffraction [1]. Four different samples are systematically analyzed: normal c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$, a-axis oriented $SmBa_2Cu_3O_{7-y}$, c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ with $Sm_2BaCuO_5$ phase, and a mixture with c-axis oriented orthorhombic $SmBa_2Cu_3O_{7-y}$ and anomalously long-c tetragonal $SmBa_2Cu_3O_x$. Raman scattering spectroscopy equipped with polarization analysis elucidates the crystal orientation and the origin of the growth of the materials. It indicates that the technique can be used for quality control of conductor manufacturing processes as well as for enhancement of the materials properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.101-102
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The un doped ZnO thin films were grown on c-$Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.361.1-361.1
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• 2014

PbVO3 (PVO), a polar magnetic material considered as a candidate of multiferroic, has ferroelectricity along the c-axis and 2-dimensional antiferromagnetism lying in the in-plane through epitaxial growth [1,2]. PVO thin films were grown on LaAlO3 (001) substrates under reduction atmosphere from a stable Pb2V2O7 sintered target using pulsed laser deposition method. Epitaxial growth of the PVO films is possible only under Ar atmospheren with no oxygen partial pressure. X-ray diffraction was used to investigate the phase formation and texture of the films. We confirmed epitaxial growth of the PVO films with crystalline relationship of PbVO3[001]//LaAlO3[001] and PbVO3[100]//LaAlO3[100]. In addition, surface morphology of the films displays drastic changes in accordance with the growth conditions. Elongated PVO grains are related to the Pb2V2O7 pyrochlore structure. The relation between structural deformation and ferroelectricity in the PVO films was examined by local measurement of piezoresponse force microscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.55-56
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• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.117-119
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• 2003

YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) high temperature superconducting thin films were grown on SrTiO$_3$single crystal substrates by pulsed laser deposition(PLD). The texture and lattice parameter of the YBCO films were analysed using the GADDS (general area detector diffraction system) which enables XRD analyses to be done faster and with fewer sample movement than with the XRD system with point detector. The XRD results of the films grown in different deposition conditions are reported together with the SEM microstructure analysis results.ysis results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.726-730
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• 2007

Two dimensional photonic crystals (2D PCs) have been fabricated by a double exposure holographic method using a He-Cd laser with a wavelength of 442nm. The arrays of the 2D PCs exhibit variable lattice structures from square to triangle according to a change of rotating angle $({\gamma})$ for double exposure beams. In addition, the period and filling factor of PCs as well as the forms (dot or antidot) could be controlled by experimental conditions. $A l.18-{\mu}m-thick$ resist was spin-coated on Si substrate and the 1st holographic exposure was carried out at incident angle $({\theta})$ of $11^{\circ}$. Then the sample was rotated to ${\gamma}=45^{\circ}{\sim}90^{\circ}$ and the 2nd holographic process was performed at ${\theta}=11^{\circ}$. The variation of diffraction efficiency during the exposure process was observed using a He-Ne laser in real time. The images of 2D PCs prepared were analyzed by SEM and AFM. We believe that the double holographic method is a tool suitable to realize the 2D PCs with a periodic array of large area.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.181-186
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• 2000

The setup of the moir$\acute{e}$ deflectometry using the virtual grating was done, so the convergence and divergence of a pencil of ray was determined. The light source was He-Ne laser(3mW). The focal length of the first lens, the second lens being 18 mm, 250 mm respectively was used for the setup of the beam expander. The optics of the moir$\acute{e}$ deflectometry determining the vergence was used a diffraction grating(pitch = $1.6{\mu}m/line$) and a front flat reflection mirror. The effective focal length of the trial lens set was measured and compared with the theoretical value.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.46-47
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• 2006

Ga-doped ZnO nanowires have been synthesized by pulsed laser deposition (PLD) in furnace on gold coated (0001) sapphire substrates. The effect of repetition rate on structural and optical properties of Ga-doped ZnO nanowires are investigated. By controlling repetition rate, the diameter of nanowires is varied between about 60 and 100 nm, and the length of nanowires is varied between about 2 and 4 um. The X-ray diffraction (XRD) reveals the structural defects induced by the Ga doping. The room temperature photoluminescence (PL) spectra of Ga-doped ZnO nanowires show strong UV emission between 382.394 and 385.279 nm with negligible visible emission.