• Journal of the Optical Society of Korea
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• v.7 no.3
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• pp.160-164
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• 2003

Materials processing by ultrashort pulsed laser is actively being applied to micromachining technology due to its advantages with regard to non-thermal machining. In this study, materials processing with ultrashort pulses was studied by using the high repetition rate of a 800 nm Ti:sapphire regenerative amplifier. This revealed that the highly precise micromachining of metallic thin film and bulk glass with a minimal heat affected zone (HAZ) could be obtained by using near damage threshold energy. Grooves with diffraction limited sub-micrometer width were obtained with widths of 620 nm on Cr thin film and 800 nm on a soda-lime glass substrate. The machined patterns were investigated through SEM images. We also phenomenologically examined the influence of variations of parameters and proposed the optimal process conditions for microfabrication.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1858-1860
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• 1999

To fabricate superconducting multiplexers with narrow pass band characteristics and reduce the physical size of device, we have designed multiplexer using hair-pin type filters with the center frequency of 13.6 GHz. Multiplexers have been fabricated superconductor(HTS), because It has low surface resistance. The $YBa_2Cu_3O_{7-{\delta}}$(YBCO) films were deposited on MgO substrates$(20{\times}20{\times}0.5mm^3)$ by using pulsed laser deposition and conventional photo-lithographic methods were used to pattern the multiplexer. Epitaxial YBCO films were grown on(100) MgO substrates and showed strongly c_axis orientations observed by X-ray diffraction technique. Superconducting transition temperatures were measured to be about 89K. Simulated results of superconducting multiplexer consisting of hair-pin type filters show the insertion loss of about 1.2dB. The measured frequency response will be compared with the simulated results.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1539-1542
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• 2005

Self-assembled monolayers (SAMs) formed by the adsorption of alkanethiols, $HS(CH_2)_nX$, where X is an organic functional group, onto gold surfaces have attracted widespread interest as templates for the fabrication of molecular and biomolecular microstructures. Previously photopatterning has been thought of as being restricted to the micron scale, because of the wellknown diffraction limit. So, we have explored a novel approach to nanofabrication by utilizing a femtosecond laser coupled to a near-field scanning optical microscope (NSOM).

• Journal of the Korean Institute of Navigation
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• v.16 no.2
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• pp.21-27
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• 1992

Shortening the lasing wavelength(particularly below infrared ; the visible region) of laser diodes is very attractive because it can provide a wide range of applications in the fields of optical information, measurement, sensor, the development of medical instrument, and optical communication through plastic fibers. According to the recent researches on the field, InGaAsP/GaAs was suggested as a material for red-light laser. In this study, in order to grow InGaAsP/GaAs epitaxial layer on InGaAsP/GaAs by LPE, we used GaP and InP two phase solution technique for 670nm and 780 nm region, respectively. Through the X-ray diffraction measurement for the epitaxial layer grown from the experiments, we found that the lattice mismatch of $In_{0.46}Ga_{0.54}As_{0.07}P_{0.93}$/GaAs and $In_{0.19}Ga_{0.81}As_{0.62}P_{0.38}$/GaAs was about +0.3% and +0.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.165-169
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• 2001

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with and without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increase of a crystallite size in the films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. Many crystalline grains were observed in the morphology of the deposited films by scanning electron microscopy. In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1057-1059
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• 2002

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.662-666
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• 1989

Pure mono Silane(Purity: 99.99%) was used as a thin film source and [$SiH_4$ + $H_2$ (5%)] + [$PH_3$ + $H_2$(0.05%)] mixed dilute gas was used for p-n junction diode. The substrate was P-type silicon wafer (p=$3{\Omega}$ cm) with the direction (100). The crystalline qualities of deposited thin film were investigated by the X-ray diffraction, RHEED and TED patterns and the voltampere characteristics of p-n junction diode was identified by I-V curve.

• Proceedings of the KIEE Conference
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• 1992.07a
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• pp.437-440
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• 1992

We design a multi-element photo-detector to measure the size of particles using the diffracted light energy distribution. The light energy that is scattered by particles in the collimated laser beam is collected by the Fourier transform lens and directed to the multi-semicircular concentric annular detecters. The scattered profile measured by the photodetector is sampled by a 32 channel analog-to-digital converter. A nonnegative least squares analysis translates the light energy distribution into the corresponding unique particle size distribution.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.109.4-109
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• 2001

We have developed a laser ultrasonic system for visualization of elastic waves propagating on a solid surface, in order to visualize ultrasonic waves propagating on opaque media. This system can produce a series of successive images as an animation of wave propagation, because of scanning an optical heterodyne probe to measure surface transient displacements. Using this visualization technique, we observed the scattering and diffraction of ultrasonic waves around various shapes of artificial defects, and examined its application to nondestructive inspection. This imaging system provides various kinds of visualization images such as propagation image, amplitude image, arrival time image and velocity image. We have been confident that this technique is available for nondestructive inspection and materials ...

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.68-74
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• 2017

To minimize chromatic variations across a wavelength band, we suggest a new design that corrects the first- and second-order wavelength derivatives of the refractive power. Based on this method, a diffraction-limited collimator is designed. The design is very stable against wavelength change, as expected. The chromatic change of the effective focal length is less than 0.002% in the wavelength range from 360 to 410 nm.