• 한국세라믹학회지
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• 제45권3호
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• pp.146-149
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• 2008

Strontium-substituted $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$ compositions were prepared by the solid state synthesis method. These compositions were characterized for their phase, crystallinity and morphology using powder x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Photoluminescence properties were investigated by measuring excitation spectra, emission spectra and decay time for varying Ba/Sr concentrations. Photoluminescence results show higher luminescence and long decay time for $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$(x=0). This is probably due to the influence of the 5d electron states of $Eu^{2+}$ in the crystal field. Long persistence was observed for these compositions due to $Dy^{3+}$ co-doping.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.781-785
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• 2000

Chalcogenide glasses are suggested as a candidate for optical recording. In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ thin films. We have used a He-Ne laser light(633nm) to probe and record of the grating. Also the polarization state of object beam was modulated with a λ/4 wave plate. The polarization state of the +1st order diffracted beam was generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The result is shown that the diffraction efficiency of circularly polarized recording represents higher than other polarization state.ate.e.

• Transactions on Electrical and Electronic Materials
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• 제5권6호
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• pp.219-222
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• 2004

This paper discovers that there are some peculiar properties that can remove holography grating, which was made in chacogenide thin film by impressed voltage. The thin films were used are $As_{40}Ge_{10}Se_{15}S_{35}$, and we use He-Ne laser in order to form thin films. I-V curved line in a thin film before a lattice was made has the critical point, about 3.7 V. Moreover, the I-V curved line increased current intensity at over 4 V after it made thin film. In addition, while holography grating is being made, and when it has the highest diffraction efficiency, a lattice can be deleted if put more voltage into it.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.736-739
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• 2003

We prepared the chalcogenide As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/, Se$\_$75/Ge$\_$25/ thin film. Holographic grating was formed by the He-Ne laser( λ =633 nm). Annealing at 100$^{\circ}C$ and 200$^{\circ}C$ has been used to change the optical property of chalcogenide thin films for holographic grating formation. As the results, large variation of the optical property was generated at the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ chalcogenide film. Diffraction efficiency of the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ film has been enhanced about three times

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권3호
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• pp.75-80
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• 2001

Holographic polymer dispersed liquid crystals (HPDLCs) have fabricated by irradiating an Ar-ion laser ( ${\lambda}$=514nm) at various intensity on LC/acrylate monomer mixtures which were sandwitched between two ITO coated glass plates. Monomer systems were composed of dipentaerythritol-hydroxy penta acrylate (DPHPA, f=5)/monofunctional acrylate monofunctional monomers. The LC used in this system was E7 (BL001, Merck). Gratings were fabricated by periodic interference of twobeams. Reflection efficiency-irradiation intensity-monomer type relationships were obtained from the UV-visible spectra of the HPDLC films. Peaks were found at a bit smaller wavelength than 514nm, due to the shrinkage of mixture volume upon polymerization. Real time measurements of diffraction efficiency have been obtained according to monomer types and LC contents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.77-78
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• 2007

In this paper, we suppose that the 1-dimensional photonic crystal using holography lithography. We used Ag doped amorphous AsGeSeS which belongs in the chalcogenide materials have sensitive photoluminescence property. The purpose of this experiment is the process to complete 3-D photonic crystal after making 2-D photonic crystal. The lattice formation was made an observation by irradiating He-Ne laser with the AsGeSeS film leaned obliquely. Then, by measuring formed diffraction beam, the diffraction lattice was calculated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• 한국광학회지
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• 제17권3호
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• pp.273-277
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• 2006

홀버닝 광메모리의 광원으로서 상용 반도체 레이저 다이오드에 Littman형 및 고정방향 Littrow형 외부공진기를 결합하여 파장가변 레이저 다이오드 시스템을 제작하고 성능을 비교 분석하였다. 두 형태의 파장가변 레이저 다이오드 시스템 모두 0차 출력광은 단일종모드로 동작하며 CFP(Confocal Fabry-Perot)의 분해능인 9MHz이내의 선폭을 예상할 수 있었으며 다이오드 구동전류 140mA 및 동작 온도 $25^{\circ}C$의 조건하에서 거울 및 회절격자를 수동나사로 회전시키는 성긴 튜닝시 Littman형은 5.375nm, 고정방향 Littrow형은 13.65 nm이상의 파장가변 범위를 보였고 PZT (Piezoelectric Transducer)에 200Hz의 톱니파 전압을 인가해서 거울을 회전시키는 미세 튜닝 시 두 형태 모두 0.042nm의 범위 내에서 연속적인 파장가변이 가능하였다. 특히 고정방향 Littrow형 외부공진기는 출력광의 방향이 바뀌는 기존의 단점을 보강하였으며, 또한 외부공진기의 길이에 따른 최대파장가변 범위를 측정하였다.

• 한국광학회지
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• 제27권3호
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• pp.95-100
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• 2016

본 논문에서는 이터븀(Yb)이 첨가된 이중 클래딩 광섬유를 이용한 고출력 고품질 준연속 레이저 시스템에 대한 연구 개발과 레이저 특성에 대해 보고한다. 이론적 수치 모사를 통해 최적화된 준연속 레이저 발진 조건을 찾았고, 그것을 바탕으로 공진기 구조와 MOPA (Master-Oscillator Power-Amplifier) 구조를 가진 광섬유 레이저 시스템을 각각 구축하였다. 두 레이저 시스템 모두 10 Hz 반복률, 10 ms로 작동시킬 때 최고 평균 출력 >150 W, 첨두 출력 >1.5 kW 이상의 준연속 레이저 빔을 발생시키는데 성공하였고, 레이저 발진 특성 및 빔 특성을 각각 비교하였다. 그리고 향후 더 높은 출력을 얻기 위한 방법과 전망에 대해 논의할 것이다.

• 대한전자공학회논문지
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• 제25권5호
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• pp.566-571
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• 1988

Laser scanning system using a hologram is simpler in optical system, lower in cost than using a polygon. In this paper, a thick hologram is fabricated for the underfilled transmission disk type with a merit of wabble insensitivity to vibration. High diffraction efficiency over 50% is obtained using silver halide recording material. The two-dimensional scan pattern with 13 scan-line is made by 7-facet hologon and mirror system. This system can be practically applied to POS(Point of Sale) bar-code symbol reader.