• Journal of the Optical Society of Korea
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• v.13 no.4
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• pp.468-471
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• 2009

We propose a simple nondestructive method to obtain refractive-index profiles of a graded-index (GRIN) light-focusing rod by means of a diffraction grating. In our proposed method, a laser beam is illuminated through a diffraction grating perpendicular to the axis of the GRIN lens and the separation between the zeroth and first-order diffraction peaks is measured and analyzed. The results demonstrate that the refractive-index profiles of commercially available GRIN lenses can be successfully reconstructed.

• Journal of Welding and Joining
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• v.34 no.1
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• pp.75-81
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• 2016

This study applied laser surface melting process using CW(Continuous wave) Yb:YAG laser and cold-work die steel SM45C and investigated microstructure and hardness. Laser beam speed, power and beam interval are fixed at 70 mm/sec, 2.8 kW and $800{\mu}m$ respectively. Depth of Hardening layer(Melting zone) was a minimum of 0.8 mm and a maximum of 1.0 mm that exceeds the limit of minimum depth 0.5 mm applying trimming die. In all weld zone, macrostructure was dendrite structure. At the dendrite boundary, Mn, Al, S and O was segregated and MnS and Al oxide existed. However, this inclusion didn't observe in the heat-affected zone (HAZ). As a result of interpreting phase transformation of binary diagram, MnS crystallizes from liquid. Also, it estimated that Al oxide forms by reacting with oxygen in the atmosphere. The hardness of the melting zone was from 650 Hv to 660 Hv regardless of the location that higher 60 Hv than the hardness of the HAZ that had maximum 600 Hv. In comparison with the size of microstructure using electron backscatter diffraction(EBSD), the size of microstructure in the melting zone was smaller than HAZ. Because it estimated that cooling rate of laser surface melting process is faster than water quenching.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.2-304.2
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• 2016

Hafnium oxide-aluminum oxide (HfO2-Al2O3) dielectric films have been fabricated by Pulsed Laser Deposition (PLD), and their properties are studied in comparison with HfO2 films. As a gate dielectric of the TFT, in spite of its high dielectric constant, HfO2 has a small energy band gap and microcrystalline structure with rough surface characteristics. When fabricated by the device, it has the drawback of generating a high leakage current. In this study, the HfAlO films was obtained by Pulsed Laser Deposition with HfO2-Al2O3 target(chemical composition of (HfO2)86wt%(Al2O3)14wt%). The characteristics of the thin Film have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The X-ray diffraction studies confirmed that the HfAlO has amorphous structure. The RMS value can be compared to the surface roughness via AFM analysis, it showed HfAlO thin Film has more lower properties than HfO2. The energy band gap (Eg) deduced by spectroscopic ellipsometer was increased. HfAlO films was expected to improved the interface quality between channel and gate insulator. Apply to an oxide thin Film Transistors, HfAlO may help improve the properties of device.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.1
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• pp.20-26
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• 2012

The objective of this study is to assess plastic deformation in aluminium alloy by acoustic nonlinearity of laser-generated surface waves. A line-arrayed laser beam made by high-power pulsed laser and mask slits is utilized to generate the narrowband surface wave and the frequency characteristics of laser-generated surface waves are controlled by varying the slit opening width and slit interval of mask slits. Various degrees of tensile deformation were induced by interrupting the tensile tests so as to obtain aluminum specimens with different degrees of plastic deformation. The experimental results show that the acoustic nonlinear parameter of a laser-generated surface wave increased with the level of tensile deformation and it has a good correlation with the results of micro-Vickers hardness test and electron backscatter diffraction (EBSD) test. Consequently, acoustic nonlinearity of laser-generated surface wave could be potential to characterize plastic deformation of aluminum alloy.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.7
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• pp.97-103
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• 2019

Mn+1AXn (MAX) phases are a family of nano-laminated compounds that possess unique combination of typical ceramic properties and typical metallic properties. As a member of MAX-phase, $Ti_2AlN$ bulk materials are attractive for some high temperature applications. In this study, $Ti_2AlN$ bulk with high density were synthesized by spark plasma sintering method. X-ray diffraction, micro-hardness, electrical and thermal conductivity were measured to compare the effect of material properties both $Ti_2AlN$ bulk samples and a conventional Ti-6Al-4V alloy. A femto-second laser conditions were conducted at a repetition rate of 6 kHz and laser intensity of 50 %, 70% and 90 %, respectively, laser confocal microscope were used to evaluate the width and depth of ablation. Consequently, the laser ablation result of the $Ti_2AlN$ sample than that of the Ti-6Al-4V alloys show a considerably good ablation characteristics due to its higher thermal conductivity regardless of to high densification and high hardness.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.230-235
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• 2009

Photopolymer is evaluated as better material than the others used for hologram storage, due to many advantages, such as high diffraction efficiency, easy processing, and self-developing. In this study, chalcogenide inorganic compound ($SeO_2$) which has optical activity, was added to polyvinyl alcohol/acrylamide photopolymer films. In order to optimize diffraction efficiency of these photopolymer films, we prepared the photopolymer films with various film thicknesses and Eosin Y content. Diffraction efficiency of the photopolymer films were measured using a 532 nm laser at $40^{\circ}$ incident angle. As a result, the phtopolymer film with Eosin Y content of 0.0045 g and thickness of $297{\mu}m$ showed the highest diffraction efficiency (78.70%).

• Journal of Broadcast Engineering
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• v.24 no.3
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• pp.452-462
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• 2019

A digital hologram, which is one of the next generation visual systems, can be generated and displayed in various formats, and a digital hologram is created in accordance with the characteristics of the system for display. Diffraction efficiency can be used as a measure of the characteristics of digital holograms generaged under various conditions in various display environments. In this paper, diffraction efficiency for computer-generated hologram (CGH) under various conditions was measured. This paper discusses the generation conditions that should be considered in hologram display. We compared each condition by measuring the intensity of the first order diffraction pattern of the fringe generated under the Fresnel condition for the phase hologram. Through this paper, we showed the tend about characteristics of the diffraction efficiency according to object point, reconstruction distance, laser and SLM.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.226-226
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• 2010

Boron Nitride (BN) doped GeSbTe films were grown by the ion beam sputtering deposition (IBSD). The in-situ sheet resistance data and the x-ray diffraction patterns showed the crystallization is suppressed due to the BN incorporation. The phase change speed in BN doped GeSbTe films were investigated using the static tester equipped with nanosecond pulsed laser. The phase change speed for BN doped GST films become faster than the corresponding values for an undoped GST film. The Johnson-Mehl-Avrami(JMA) plot and Avrami coefficient for laser crystallization showed that the change in growth mode during the laser crystallization is a most important factor for the phase change speed in the BN doped GST films. The JMA results and the atomic force microscopy (AFM) images indicate that the origin of the change in the crystalline growth mode is due to an increase in the number of initial nucleation sites which is produced by the incorporated BN. In addition, the retension properties for the laser writing/erasing are remarkably improved in BN doped GeSbTe films owing to the stability of the incorporated BN.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.475-479
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• 2007

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.