• Korean Journal of Optics and Photonics
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• v.12 no.6
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• pp.496-502
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• 2001

We generated a nondiffracting beam and investigated its intensity profile on propagation. We first obtained an annular output beam from Nd:YAG laser with a negative branch unstable ring resonator and, using a 1m focal length lens, we generated a Bessel- Gauss beam. The inner radius of the annular output beam was 2.57 mm and the ring width was 0.145 mm. The intensity profile of the nondiffracting beam did not show any appreciable diffraction up to 33 m distance from the focal lens. This result was compared with the theory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.312-315
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• 2000

In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide $A_{s40}Ge_{10}Se_{15}S_{35}4 thin films using a He-Ne laser light(633nm). The thickness of thin films is a 8677${\AA}$ and 9093${\AA}$. A He-Ne laser used to probe and record of the grating. Also the polarization state of object beam modulated with a $\lambda/4$ wave plate. The polarization state of the +lst order diffracted beam generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The diffraction efficiency of circularly polarized recording represented higher than other polarization state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.33-35
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• 2000

Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase Na$_{0.5}$K$_{0.5}$NbO$_3$ (NKN) thin film have been grown on LaA1O$_3$ substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\phi$ scan data evidence highly c-axis oriented along the [001] direction.ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.820-823
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• 2000

In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide $As_{40}$$Ge_{10}$$Se_{15}$$S_{35}$ thin films using a He-Ne laser light(633nm). The thickness of thin films is a 8677${\AA}$ and 9093${\AA}$. A He-Ne laser used to probe and record of the grating. Also the, polarization state of object beam modulated with a $\lambda/4$ wave plate. The polarization state of the +1st order diffracted beam generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The diffraction efficiency of circularly polarized recording represented higher than other polarization state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.791-795
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• 2000

Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.

• Korean Journal of Optics and Photonics
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• v.10 no.5
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• pp.391-395
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• 1999

We present the measurement of the diffraction efficiency and response time of the photorefractive grating recorded in $LiNbO_3$ photorefractive crystal doped with 4%-mole MgO. Two laser sources were used in the experiments; frequency-doubled Q-switched Nd:YAG laser ($\lambda$=532 nm) and cw Ar-ion laser ($\lambda$=514.5 nm). The same optical geometry was also used in both experiments in order to maintain the experimental consistency. Using the two-wave mixing scheme in both experiments we measured the maximum diffraction efficiency in the range of beam intensity of 1.6~100 W/ $\textrm{cm}^2$, and the response times for both cases of recording and erasing. Two sets of results obtained from the experiments are compared and analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.73-76
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• 2005

To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.256-256
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• 2008

We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.36-42
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• 2000

Some polarization characteristics of reflection type photopolymer are investigated. Photopolymer on a Mylar substrate alters an incoming linearly polarized laser beam to an elliptical polarization. Due to the rotation of the polarization, the recording gratings show different diffraction efficiencies. The rotation angle is of order of 10-50% for the tested samples. It is found that the polymer layer does not changes the polarization direction but the Mylar substrate alone distorts the incoming polarization to a comparable degree. As align the polarization states of photopolymers to be parallel with a laser using a He-Ne laser(633nm), which is not sensitive to that material, it was possible to make high diffraction efficiency gratings.

• Journal of the Korean Magnetics Society
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• v.22 no.4
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• pp.147-156
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• 2012

Recently, there have been considerable interests in various thin film growth techniques with atomically controllable thickness. Among them, atomically controlled pulsed laser deposition (PLD) technique is quite popular. We have developed advanced thin film growth technique using PLD and Reflection high energy electron diffraction (RHEED). Using the technique, the growth of oxide thin films with the precisely controllable thickness has been demonstrated. In addition, our technique can be applied to high quality thin film growth with minimal defect and bulk chemical composition. In this paper, our recent progresses as well as the current research trend on oxide thin films will be summarized.