• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.60-65
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• 2002

$ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition method on Si(100) substrates at a substrate temperature of $550^{\circ}C$ with oxygen pressures of 100mTorr, and subsequently to investigate their photoluminescence characteristics after post-annealed at $600^{\circ}C$ and $700^{\circ}C$. As a result for X-ray diffraction, $Ga_2O_3$ shape appeared with increasing annealing temperature. The luminescent spectra show a broad band extending from 350 to 600nm peaking at 460nm. A post-annealing treatment of $ZnGa_2O_4$ thin films led to the different shape of luminescent intensity and grain size.

• Journal of Welding and Joining
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• v.12 no.2
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• pp.11-19
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• 1994

레이저 가공기술은 재료가공 분야에서 넓은 응용분야를 가지고 있으며, 특히 절단, 용접, 열처리 등의 가공분야에서 고정밀도와 자동화의 용이성으로 인해 생산성이 높은, 고부가가치의 첨단응용 기술로 부각되고 있다. 특히 레이저절단은 타 절단법에 비교되는 절단정도, 열영향, 생산성, 작업 환경등의 각종 우위성으로 박판 및 후판절단분야에서 급속한 보급을 보이기 시작하였다. 현재 대 부분의 레이저 가공기는 CNC화 되어가고 있는 추세이며, 레이저 절단의 경우 생산성증대 및 고 정밀화를 위하여 CAD/CAM인터페이스에 의한 자동화가 필연적인 상황이다. 뿐만아니라 고출력 레이저 발전기를 가공 기본체에 탑재한 탑재형 레이저가공기의 출현으로 대형부재의 절단이 가능 하게 되었으며, 더불어 절단공정의 무인화를 지향하는 각종 시스템이 개발되고 있다. 이와 같은 무인화, 생산성증대, 작업시간단축과 러닝 코스트 및 재료의 절감을 위한 노력의 일환으로 컴 퓨터에 의한 자동 및 반자동 네스팅 시스템의 개발을 들 수 있다. 레이저에 의한 2차원 절단응 용분야에서의 네스팅작업은 설계가 끝난 각 부품의 절단작업의 전단계로서 수행되며, 일반적으로 네스팅공정이 완료되면 절단경로를 결정하고 가공조건과 함께 수치제어공작기계의 제어에 필요한 NC코드를 생성하게 된다. 최근에는 이와 같은 네스팅 시스템이 일부 생산현장에 적용되고 있 으나 이러한 시스템들의 대부분이 외국에서 개발된 것을 수입하여 사용하는 실정이다. 2차원 패턴의 최적자동배치문제는 비단 레이저 절단과 같은 열가공 분야에서 뿐만 아니라 블랭킹 금형, 의류, 유리, 목재등 여러분야에서 응용이 가능하며 패키지의 국산화가 시급한 실정이다. 네스 팅작업은 적용되는 분야에 따라 요구사항과 구속조건이 달라지며 이로 인해 알고리즘과 자료구 조도 달라지게 되나 공통적인 목표는 주어진 영역안에서 겹침없이 배치하면서 버림율을 최소화 하는 것이다. 지난 10여년간 여러 산업의 응용분야에서는 네스팅시스템의 도입이 활발하게 이 루어지고 있는데 수동에 반자동 및 자동에 이르기까지 다양하나 자동네스팅시스템의 경우 배치 효율의 신뢰성이 비교적 부족하기 때문에 아직까지는 생산현장에서 기피하는 실정이다. 배치알 고리즘의 관점에서 볼 때 이러한 문제들은 NP-complete문제로 분류하며 제한된 시간안에 최적의 해를 구하기가 가능한 조합 최적화 문제로 알려져 있다. 따라서 이 글에서는 레이저 절단분야 에서의 네스팅시스템에 관한 개요와 최근의 연구동향 그리고 몇 가지 전형적인 네스팅 알고리 즘들을 소개하고 비교분석을 통해 개선점을 간략하게 논의하고자 한다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.5
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• pp.237-241
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• 2004

Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility ($\mu$$_{FE}$ ) , less than 1 c $m^2$/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in $\mu$$_{FE}$ and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 75$0^{\circ}C$ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.

• Journal of The Korean Society For Urban Railway
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• v.6 no.4
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• pp.393-399
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• 2018

It is well recognized that residual stresses of the rails, generated from the manufacturing process including roller straightening and heat treatment, play an important role in determining fatigue and fracture properties of the rails. Thus, it has been a challenge to measure the residual stresses accurately. In this work, contour method was employed to evaluate the residual stresses existing in interior of the rails. The cross section perpendicular to the longitudinal direction of the rail was cut at a very slow rate using electric discharge machining (EDM), after which a laser-based flexural measuring instrument enabled us to precisely measure the flection of the cross section. The measured data were converted into the residual stresses using the commercial finite element package, ABAQUS, through a user-defined element (UEL) subroutine, and the residual stresses of the new rails (50N, KR60, UIC60) with three different specifications were compared.

• Journal of Biomedical Engineering Research
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• v.43 no.2
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• pp.116-123
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• 2022

This study analyzes the Mechanical properties of a medical bone plate by 3D printing. With the recent development of 3D printing technology, it is being applied in various fields. In particular, in the medical field, the use of 3D printing technology, which was limited to the existing orthosis and surgical simulation, has recently been used to replacement bones lost due to orthopedic implants using metal 3D printing. The field of application is increasing, such as replacement. However, due to the manufacturing characteristics of 3D printing, micro pores are generated inside the metal printing output, and it is necessary to reduce the pores and the loss of mechanical properties through post-processing such as heat treatment. Accordingly, the purpose of this study is to analyze the change in mechanical performance characteristics of medical metal plates manufactured by metal 3D printing under various conditions and to find efficient metal printing results. The specimen to be used in the experiment is a metal plate for trauma fixation applied to the human phalanx, and it was manufactured using the 'DMP Flex 100(3D Systems, USA), a metal 3D printer of DMLS (Direct Metal Laser Sintering) method. It was manufactured using the PBF(Powder Bed Fusion) method using Ti6Al4V ELI powder material.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.201-208
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• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.

• Journal of the Korean Applied Science and Technology
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• v.36 no.1
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• pp.174-188
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• 2019

The present study was carried out to investigate the emulsifying properties of heat-treated octenyl succinic anhydride(OSA) starch and the interfacial structure at oil droplet surface in emulsions stabilized by heat-treated OSA starch. First, the aqueous suspensions of OSA starch were heated at $80^{\circ}C$ for 30 min. Oil-in-water emulsions were then prepared with the heat-treated OSA starch suspension as sole emulsifier and their physicochemical properties such as fat globule size, surface load, zeta-potential, dispersion stability, confocal laser scanning microscopic image(CLSM) were determined. It was found that fat globule size decreased as the concentration of OSA starch in emulsions increased, showing a lower limit value ($d_{32}:0.31{\mu}m$) at ${\geq}0.2wt%$. Surface load increased steadily with increasing OSA starch concentration in emulsions, possibly forming multiple layers. In addition, fat globule sizes were also influenced by pH: they were increased in acidic conditions and these results were interpreted in view of the change in zeta potentials. The dispersion stability by Turbiscan showed that it was more unstable in emulsions at acidic condition. Heat-treated OSA starch found to adsorb at the oil droplet surface as some forms of membrane (not starch granules), which might be indicative of stabilizing mechanism of OSA starch emulsions to be steric forces.

• Clean Technology
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• v.25 no.4
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• pp.316-323
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• 2019

In order to enhance combustion efficiency and reduce atmosphere pollutants, it is essential to measure carbon monoxide (CO) concentration precisely in combustion exhaust. CO is the important gas species regarding pollutant emission and incomplete combustion because it can trade off with NOx and increase rapidly when incomplete combustion occurs. In the case of a steel annealing system, CO is generated intentionally to maintain the deoxidation atmosphere. However, it is difficult to measure the CO concentration in a combustion environment in real-time, because of unsteady combustion reactions and harsh environment. Tunable Diode Laser Absorption Spectroscopy (TDLAS), which is an optical measurement method, is highly attractive for measuring the concentration of certain gas species, temperature, velocity, and pressure in a combustion environment. TDLAS has several advantages such as sensitive, non-invasive, and fast response, and in-situ measurement capability. In this study, a combustion system is designed to control the equivalence ratio. Also, the combustion exhaust gases are produced in a Liquefied Petroleum Gas (LPG)/air flame. Measurement of CO concentration according to the change of equivalence ratio is confirmed through TDLAS method and compared with the simulation based on Voigt function. In order to measure the CO concentration without interference from other combustion products, a near-infrared laser at 4300.6 cm^-1 was selected.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.238-244
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• 2013

Doping process using laser is an important process in fabrication of solar cell for heat treatment. However, the process of using the furnace is difficult to form a selective emitter doping region. The case of using a selective emitter laser doping is required an expensive laser equipment and induce the wafer's structure damage due to high temperature. This study, we fabricated a new costly plasma source. Through this, we research the selective emitter doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (a few tens kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer. Atmospheric plasma treatment time was 15 s and 30 s, and current for making the plasma is 40 mA and 70 mA. We investigated a doping profile by using SIMS (Secondary Ion Mass Spectroscopy) and we grasp the sheet resistance of electrical character by using doping profile. As result of experiment, prolonged doping process time and highly plasma current occur a deeper doping depth, moreover improve sheet resistance. We grasped the wafer's surface damage after atmospheric pressure plasma doping by using SEM (Scanning Electron Microscopy). We check that wafer's surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.43-48
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• 2024

The discovery of a two-dimensional electron gas (2DEG) at the interface of LaAlO₃ (LAO) and SrTiO₃ (STO) substrates has sparked significant interest, providing a foundation for cutting-edge research in electronic devices based on complex oxide heterostructures. However, conventional methods for producing LAO thin films, typically employing techniques like pulsed laser deposition (PLD) within physical vapor deposition (PVD), are associated with high costs and challenges in precisely controlling the La and Al composition within LAO. In this study, we adopted a cost-effective alternative approach-solution-based processing-to fabricate LAO thin films and investigated their electrical properties. By adjusting the concentration of the precursor solution, we varied the thickness of LAO films from 2 to 65 nm and determined the sheet resistance and carrier density for each thickness. After vacuum annealing, the sheet resistance of the conductive channel ranged from 0.015 to 0.020 Ω·s^-1, indicating that electron conduction occurs not only at the LAO/STO interface but also into the STO bulk region, consistent with previous studies. These findings demonstrate the successful formation and control of 2DEG through solution-based processing, offering the potential to reduce process costs and broaden the scope of applications in electronic device manufacturing.