• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.486-491
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• 2008

The plasma processing is applied to many industrial fields as thin film deposition or surface treatment technique. In this study, we investigated large-area uniformed surface treatment of PET film at low temperature by using Scanning Plasma Method(SPM). Then, we measured difference and distribution of temperature on film's surface by setting up a thermometer. We studied the condition of plasma for surface treatment by examining intensity of irradiation of uniformed plasma. And we compared contact angles of treated PET film by using Ar and $O_2$ plasma based low temperature. In our result, surface temperature of 3-point of treating is low temperature about $22^{\circ}C$, in other hands, there is scarcely any variation of temperature on film's surface. And by using Ar plasma treatment, contact angle is lower than untreatment or $O_2$ plasma treatment. In case of PET film having thermal weak point, low temperature processing using SPM is undamaged method in film's surface and uniformly treated film's surface. As a result, Ar plasma surface treatment using SPM is suitable surface treatment method of PET film.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.179.2-179.2
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• 2013

A large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER device. Negative hydrogen ion sources are major components of neutral beam injection (NBI) systems in future large-scale fusion experiments such as ITER and DEMO. The RF sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck-Institute for Plasma Physics), Garching, for the ASDEX-U and W7-AS neutral beam heating systems. Ion sources of the first NBI system (NBI-1) for the KSTAR tokamak have been developed successfully with a bucket plasma generator based on the filament arc discharge, which have contributed to achieve a good plasma performance such as 15 sec H-mode operation with an injection of 3.5 MW NB power. There is a development plan of RF ion source at the KAERI to extract the positive ions, which can be used for the second NBI system (NBI-2) of the KSTAR and to extract the negative ions for future fusion devices such as Fusion Neutron Source and Korea-DEMO. The development progresses of RF ion source at the KAERI are described in this presentation.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.201-204
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• 2002

A large area inductively coupled plasma which is applicable to LCD processing is built with a modified single loop RF antenna. Combination of parallel and series paths of RF current through the antenna induces local enhancement of plasma density, which in turn provides uniform plasma density near the substrate. The plasma density distribution is measured and compared with that of the conventional single loop antenna. Aisotropic etching of photoresist is performed, and it is found that etch uniformity is improved by 3％ from 15% of the conventional etcher over 350$\times$300mm glass substrates. Photoresist etching rate and uniformity can be further improved by applying a periodic weak axial magnetic fieid.

• Journal of Magnetics
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• v.7 no.3
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.861-864
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• 1999

A new plasma source using the multi-cathode electron beam has been designed and manufactured. A multi-cathode was adopted to produce bulk plasmas in a large volume. Multi-cathode electron beam plasma source(MCEBPS) was found to generate stable plasmas over the wafer diameter of 300 mm or above. W(tungsten) filament was used as a cathode. Over a 320 mm diameter, both the plasma potential $V_p$ and floating potential $V_f$ were uniformly maintained and the difference between $V_p and V_f$ was measured to be small. The plasma density was around $10^{10} cm^{-3}$ and its variation along the radial distance was small.

• Nuclear Engineering and Technology
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• v.52 no.12
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• pp.2709-2716
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• 2020

Compositions of large nuclear cores (e.g. boiling water reactors) are highly heterogeneous in terms of fuel composition, control rod insertions and flow regimes. For this reason, they usually lack high order of symmetry (e.g. 1/4, 1/8) making it difficult to estimate their neutronic parameters for large spaces of possible loading patterns. A detailed hyperparameter optimization technique (a combination of manual and Gaussian process search) is used to train and optimize deep neural networks for the prediction of three neutronic parameters for the Ringhals-1 BWR unit: power peaking factors (PPF), control rod bank level, and cycle length. Simulation data is generated based on half-symmetry using PARCS core simulator by shuffling a total of 196 assemblies. The results demonstrate a promising performance by the deep networks as acceptable mean absolute error values are found for the global maximum PPF (~0.2) and for the radially and axially averaged PPF (~0.05). The mean difference between targets and predictions for the control rod level is about 5% insertion depth. Lastly, cycle length labels are predicted with 82% accuracy. The results also demonstrate that 10,000 samples are adequate to capture about 80% of the high-dimensional space, with minor improvements found for larger number of samples. The promising findings of this work prove the ability of deep neural networks to resolve high dimensionality issues of large cores in the nuclear area.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.231-236
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• 2004

The area of flat glass panel displays such as LCD (Liquid crystal display) and PDP (Plasma display panel) has been increased more than 2 $\times$ 2 m$^2$ for productivity improvement. However, such a large panel area incurs large panel deflection during panel transfer using robots or AGV (Automated guided vehicle) systems. Therefore, electronic industries are making an effort to find an alternative transfer system for the large glass panels with small deflection. The air conveyor with porous pads is one plausible solution, but it becomes expensive because the large porous pads cost much and air consumption increases as the panel area increases. In this work, a simple air slit levitating conveyor was devised to lower the equipment cost and to reduce the air consumption of system. The air flow model between the LCD glass panel and conveyor was constructed and its validity was verified by experiments. To minimize the air consumption, the conveyor dimensions were optimized, and the air consumptions between the air conveyors with the air slit and that with the porous pad were compared.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.275-281
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• 2001

We used the discrete-sectional model to analyze the particle growth by coagulation of particles in silane plasma reactor, considering the Gaussian distribution function for particle charges. The effects of process conditions such as monomer size and mass generation rate of monomers on particle growth in plasma reactor were analyzed theoretically/ Based on the Gaussian distribution function of particle charges, the large particles of more than 40 nm in size are almost found to be charged negatively, but some fractions of small, tiny particles are in neutral state or even charged positively. As the particle size and surface area increase with time by particle coagulation, the number of charges per particle increases with time. As the large particles are generated by particle coagulation, the particle size distribution become bimodal. The results of discrete-sectional model for the particle growth in silane plasma reactor were in close agreement with the experimental results by Shiratani et al. [3] for the same plasma conditions. We believe the model equations for the particle charge distribution and coagulation between particles can be applied to understand the nano-sized particle growth in plasma reactor.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.