• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.16.1-16.1
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• 2011

$TiO_2$ is a promising material for gas sensors. To achieve high sensitivities, the material should exhibit a large surface-to-volume ratio and possess the high accessibility of the gas molecules to the surface. Accordingly, a wide variety of porous $TiO_2$ nanomaterials synthesized by wet-chemical methods have been reported for gas sensor applications. Nonetheless, achieving the large-area uniformity and comparability with well-established semiconductor production processes of the methods is still challenging. An alternative method is soft-templating which utilizes nanostructured inorganic or organic materials as sacrificial templates for the preparation of porous materials. Fabrication of macroporous $TiO_2$ films and hollow $TiO_2$ tubes by soft-templating and their gas sensing applications have been reported recently. In these porous materials composed of assemblies of individual micro/nanostructures, the form of links or necks between individual micro/nanostructures is a critical factor to determine gas sensing properties of the material. However, a systematic study to clarify the role of links between individual micro/nanostructures in gas sensing properties of a porous metal oxide matrix is thoroughly lacking. In this work, we have demonstrated a fabrication method to prepare highly-ordered, embossed $TiO_2$ films composed of anatase $TiO_2$ hollow hemispheres via soft-templating using polystyrene beads. The form of links between hollow hemispheres could be controlled by $O_2$ plasma etching on the bead templates. This approach reveals the strong correlation of gas sensitivity with the form of the links. Our experimental results highlight that not only the surface-to-volume ratio of an ensemble material composed of individual micro/nanostructures but also the links between individual micro/nanostructures play a critical role in evaluating the sensing properties of the material. In addition to this general finding, the facileness, large-scale productivity, and compatability with semiconductor production process of the proposed fabrication method promise applications of the embossed $TiO_2$ films to high-quality sensors.

• 공업화학
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• 제24권5호
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• pp.544-550
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• 2013

본 연구에서는 소수성 다공질 세라믹관이 결합된 수중 유전체장벽방전 플라즈마 반응기를 이용하여 모사 염색폐수의 색도저감을 조사하였다. 플라즈마에 의해 생성되는 활성성분들은 수명이 매우 짧으므로 생성되는 즉시 물과 접촉시켜야 효과적인 폐수처리가 가능하며, 또한 반응속도를 증가시키기 위해서는 기/액 접촉면적이 커야 하는데, 본 연구의 반응기는 두 가지 목적을 동시에 이룰 수 있다. 아조 염료로는 amaranth, 그리고 플라즈마 생성을 위한 기체로는 공기가 사용되었으며, 방전전력, 기체 유량, 용존 음이온, 염료 초기농도 등 색도 제거에 미치는 다양한 변수의 영향이 평가되었다. 기체유량이 $1.5Lmin^{-1}$일 때, 플라즈마 기체가 염색폐수와 가장 효과적으로 접촉하였으며, 색도 제거가 가장 빠르게 일어났다. 염료 초기농도 $40.2{\mu}molL^{-1}$ (폐수부피 : 0.8 L), 방전전력 3.37 W의 조건에서 색도를 99% 이상 제거하는데 약 25 min이 소요되었다. 그밖에 염료의 초기농도가 낮을수록, 방전전력이 높을수록 색도 제거 속도가 증가하는 것으로 나타났다. 염소이온이 존재할 경우 색도 제거 속도가 빨라졌으나, 질산이온은 색도 제거 속도에 영향을 주지 않았다.

• 대한한의학방제학회지
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• 제19권2호
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• pp.47-59
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• 2011

Objectives : We investigated the effects of gambigyeongsinhwan2(GGH(2)) on body weight and examined whether blood triglyceride levels and visceral fat are inhibited by it in high fat diet-fed obese male mice. Methods : 8 weeks old, high fat diet-fed obese male mice were divided into 5 groups: C57BL/6N normal, control, GGH(2)-1, GGH(2)-2 and GGH(2)-3. After mice were treated with GGH(2) for 8 weeks, we measured body weight gain, food intake, feeding efficiency ratio, fat weight, plasma leptin and lipid levels. We also did histological analysis for liver and fat on the mice. Results : 1. Compared with controls, GGH(2)-treated mice had lower body weight gain and adipose tissue weight, the magnitudes of which were prominent in GGH(2)-3. 2. Compared with controls, GGH(2)-treated mice had lower feeding efficiency ratio, the magnitude of which was prominent in GGH(2)-3. 3. Compared with controls, GGH(2)-treated mice had lower blood plasma triglyceride level. 4. Blood plasma AST and ALT concentrations were not changed by GGH(2), indicating GGH(2) do not show any toxic effects. 5. Consistent with their effects on body weight gain, the size of adipocytes were significantly decreased by GGH(2), whereas the adipocyte number per unit area was significantly increased, suggesting that GGH(2) decreased the number of large adipocytes. Hepatic lipid accumulation was decreased by GGH(2). Conclusions : These results demonstrate that GGH(2) effectively reduces body weight gain, feeding efficiency ratio, blood plasma triglyceride level and improves abdominal fat.

• 대한기계학회논문집B
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• 제36권12호
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• pp.1171-1176
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• 2012

실리콘 기판 위에 플라즈마 기상층착법을 이용하여 합성된 탄소나노튜브를 화학적인 방법이나 전자빔 혹은 이온빔과 같은 진공 챔버 내에서의 공정없이 펨토초레이저를 이용하여 선택적으로 패터닝 하는 방법을 구현하였다. 플라즈마 기상층착법으로 합성된 탄소나노튜브는 수직성장이 가능하며 탄소나노튜브 간의 간격을 조절하여 성장이 가능하다. 이러한 장점으로 전계방출소자, 바이오센서 등의 응용을 위하여 이용되는 합성 방법이다. 이러한 응용을 위하여 선택적으로 나노튜브를 제거하고 탄소나노튜브 끝의 촉매금속을 제거하는 것이 응용의 효율을 높이는데 매우 중요하다. 본 연구에서는 탄소나노튜브의 전기적, 구조적 특성에 영향을 줄 수 있는 화학적인 방법을 사용하지 않고 펨토초레이저를 사용하여 패터닝과 촉매금속을 제거하는 방법을 구현하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• E2M - 전기 전자와 첨단 소재
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• 제12권7호
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• 한국재료학회지
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• 제7권4호
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• pp.322-329
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• 1997

ECR 마이크로 플라즈마 CVD법에 의하여 단결정 Si기판위에서 대면적에 걸쳐 방향성을 가진 다이아몬드박막을 성공적으로 성장시키고, 막 증착공정을 바이어스처리 단계와 성막단계의 2단계로 나누어 실시할 때 바이어스처리 단계에서 여러 공정 매개변수들이 다리아몬드 핵생성밀도에 미치는 효과에 관하여 조사하였다. 기판온도$600^{\circ}C$, 압력 10Pa, 마이크로파 전력 3kW, 기판바이어스 +30V의 조건으로 바아어스 처리할 때, 핵생성에 대한 잠복기간은 5-6분이며, 핵생성이 완료되기 까지의 시간은 약 10분이다. 10분 이후에는 다이아몬드 결정이 아닌 비정질 탄소막이 일단 형성된다. 그러나 성장단계에서 이러한 비정질 탄소막은 에칭되어 제거되고 남아있는 다이다몬드 핵들이 다시 성장하게 된다. 또한 기판온도의 증가는 다이아몬드 막의 결정성을 높이고 핵생성 밀도를 증가시키는 데에 별로 효과가 없다. ECR플라즈마 CVD법에서 바이어스처리 테크닉을 사용하면, 더욱 효과적임을 확인하였다. 총유량 100 sccm의 CH$_{3}$OH(15%)/He(85%)계를 사용하여 가스압력 10Pa, 바이어스전압 +30V마이크로파 전력 3kW, 온도 $600^{\circ}C$의 조건하에서 40분간 바이어스처리한 다음 다이아몬드막을 성장시켰을 때 일시적으로나마 제한된 지역에서 완벽한 다이아몬드의 에피성장이 이루어졌음을 SEM으로 확인하였다. 이것은 Si기판상에서의 다이아몬드의 에피성장이 가능함을 시사하는 것이다. 그밖에 라만분광분석과 catodoluminescence 분석에 의한 다이아몬드의 결정질 조사결과와 산소방전 및 수소방전에 의한 챔버벽의 탄소오염효과 등에 관하여 토의하였다.

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2008년도 한국우주과학회보 제17권2호
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• pp.31.1-31.1
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• 2008

While some observations in the geomagnetic tail region supported electrons could be accelerated by reconnection processes, we still need more observation data to confirm electron acceleration in this region. Because most acceleration processes accompany strong pitch angle diffusion, if the electrons were accelerated in this region, strong energetic electron precipitation should be observed near earth on aurora oval. Even though there are several low altitude satellites observing electron precipitation, intense and small scale precipitation events have not been identified successfully. In this presentation, we will show an observation of strong energetic electron precipitation that might be analyzed by relativistic electron acceleration in the confined region. This event was observed by low altitude Korean STSAT-1, where intense several hundred keV electron precipitation was seen simultaneously with 10 keV electrons during storm time. In addition, we observed large magnetic field fluctuations and an ionospheric plasma depletion with FUV aurora emissions. Our observation implies relativistic electrons can be generated in the small area where Fermi acceleration might work.

• 전자공학회논문지A
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• 제31A권5호
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• pp.106-112
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• 1994

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

• 열처리공학회지
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• 제19권4호
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• pp.219-224
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• 2006

Silver paste with low sintered temperature has been developed in order to apply electronic parts, such as bus electrode, address electrode in PDP (Plasma Display Panel) with large screen area. In this study, nano-sized silver particles with 10-30 nm were synthesized from silver nitrate ($AgNO_3$) solution by chemical reduction method and silver paste with low sintered temperature was prepared by mixing silver nanoparticles, conventional silver powder with the particle size 1.6 um and Pb-free frit. Conductive thick film from silver paste was fabricated by screen printing on alumina substrate. After firing at $540^{\circ}C$, the cross section and surface morphology of the thick films were analyzed by FE-SEM. Also, the sheet resistivity of the fired thick films was measured using the four-point technique.