• 한국표면공학회지
• /
• 제41권1호
• /
• pp.6-11
• /
• 2008

An Indium Zinc Oxide(IZO) transparent conductive layer was deposited on a large size glass substrate by using magnetron dc sputtering method with varying a deposition temperature. As the deposition temperature decreased to a room temperature, the sheet resistance of IZO film increased. But this deposition temperature range is included in an applicable to a device. From a standpoint of the sheet resistance, the differences of the sheet resistance were not great and the uniformity of the layer was uniformed around 10%. Crystallization particles were shown on the surface of the layer as deposition temperature increased, but these particles were not shown on the surface of the layer as deposition temperature decreased to the room temperature. It didn't make a scrap of difference in a transmittance of varying deposition temperature. Therefore, it is concluded that IZO thin film manufactured by the room temperature deposition condition can be used as a large size transparent conductive layer of a liquid crystal display device.

• 한국전기전자재료학회논문지
• /
• 제37권1호
• /
• pp.26-35
• /
• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• 한국결정성장학회지
• /
• 제23권6호
• /
• pp.296-301
• /
• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under the thermal chemical vapor deposition system. A 304-type stainless steel was used as a substrate with nickel powders as the catalyst. The surface of the substrate was pretreated using a sand paper or a mechanical drill to enhance the production yield of the carbon coils. The characteristics of the deposited carbon nanomaterials on the substrates were investigated according to the surface state on the stainless steel substrate. The protrusion induced by the grooves on the substrate surface could enhance the formation of the carbon nanomaterials having the coils geometries. The cause for the enhancement of the carbon coils formation by the grooves was suggested and discussed with the surface energies for the interaction between as-growing carbon elements. Finally, we could obtain the massive production yield of the carbon coils by the surface pretreatment using SiC sand papers on the several tens grooved stainless steel substrate.

• Bulletin of the Korean Chemical Society
• /
• 제31권7호
• /
• pp.2031-2035
• /
• 2010

A triple-probe channel type chemosensor based on an $NO_2S_2$-macrocycle functionalized with phenyltricyanovinyl group was synthesized and its sensing characteristics were examined. The pink-red solution of L changed selectively to pale yellow upon addition of $Hg^{2+}$. The selective fluorometric response of L to all the tested metal ions was studied. The results showed that a large enhancement of the fluorescence of L was observed only in the case of $Hg^{2+}$. In addition, L showed large anodic shift (~ 0.3 V) for the addition of excess $Hg^{2+}$. Through above three observed results by the different techniques, we confirmed that the proposed chemosensor acts as the multiple-probe channel sensing material. The crystal structure of mercury(II) nitrate complexs of L which shows a 1-D polymer network with a formula $[Hg_2(L)_2(NO_3)_2({\mu}-NO_3)_2]_n$ was also reported.

• 한국결정성장학회지
• /
• 제14권3호
• /
• pp.95-100
• /
• 2004

This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts with respect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the agglomeration of the coherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-difference numerical method. The interface atomic diffusion is taken to be the dominant transport mechanism where both capillarity and elastic strain are considered for the driving forces. Under plane strain condition with elastically homogeneous and anisotropic system with cubic symmetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the film thickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibrium aspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only a function of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since the equilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to silicon area, and may deteriorate the electrical performances.

• 센서학회지
• /
• 제7권6호
• /
• pp.432-436
• /
• 1998

최근에 액정을 이용한 대형 디스플레이 장치를 만들기 위하여 PDLC(Polymer Dispersed Liquid Crystal)가 활발하게 개발되고 있다. 이것은 광손실이 적고 휘도가 높으며 제작 공정이 간단하여, 대형 디스플레이 장치로 제작하기 쉽다. 본 연구에서는 PDLC의 전기광학적 특성을 알아보기 위해 응답속도와 인가전압에 따른 광투과량을 측정하였다. 측정방법은 He-Ne 레이저를 PDLC 셀에 조사하고, 투과된 광량은 광다이오드를 사용하여 측정하였다. 측정결과는 디지털 오실로스코프로 분석하고 그래픽으로 표시하였으며, 측정한 데이터를 가지고 기존의 LCD와 비교하여 디스플레이 장치로서의 가능성을 연구하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.308-309
• /
• 2008

We have proposed a high performance liquid crystal display using two thin film transistors (TFTs) for the large size TFT-LCD desirably 42inch WXGA panel for TVs. The device generates stronger electric fields to reorient liquid crystals than that in the conventional IPS device because the voltages with opposite polarity with respect to the common electrode are applied to each finger-type electrode. As a result, the operation voltage of 2Tr-IPS mode can be decreased and the transmittance can be increased compared to conventional IPS device. Consequently, the 2Tr-IPS has all the advantages over conventional IPS from large size point of view.

• 한국기계가공학회지
• /
• 제19권4호
• /
• pp.30-35
• /
• 2020

The light guide plate (LGP) provides a surface light source on the back of the liquid crystal display (LCD), which is not self-emitting; thus, it is an essential component of display units requiring sufficient brightness. To maximize the light-emitting effect of an LGP, enough incident light, from the light source, should enter into its side. However, the current trend in LCD panels is represented by larger and thinner screens and this smaller thickness prevents the accordingly thin LGPs from providing sufficient brightness. This paper proposes a process for manufacturing wedge-type LGPs, which might increase the amount of incident light and, consequently the surface light emission, for applications in large LCDs. The proposed method was validated by building a dedicated manufacturing machine and performing illuminance experiments on the fabricated LGP.

• 한국결정성장학회지
• /
• 제15권2호
• /
• pp.61-67
• /
• 2005

본 연구에서는 질화규소의 소결 과정에서 인위적으로 형성시킨 기공내부에 질화규소의 휘스커를 성장시키는 새로운 방법을 시도하였다. 실험변수로는 기공의 크기, 기공률 및 질소압력을 사용하였다. 기공률이 14vol%와 27vol%로 낮은 경우에는 질화규소 휘스커가 기공내부에 잘 성장되었으나 39vol%와 50vol%로 기공률이 증가된 경우에는 휘스커가 거의 성장하지 않았다. 한편 기공의 크기와 질소압력은 기공내부에 질화규소 휘스커의 성장에 거의 영향을 주지 않았고, 소결과정에 기공 내에 휘스커를 성장시키는 중요한 조건은 고립된 형태의 닫힌 기공을 유지하는 것임을 알았다.

• 한국결정성장학회지
• /
• 제9권4호
• /
• pp.402-416
• /
• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.