• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.6
• /
• pp.535-541
• /
• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si doped GaAs crystals for photonic devices, and low-dislocation-density low-residual-strain 4-inch to 6-inch semi-insulating GaAs crystals for electronic devices by Vertical Bridgman(VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.09a
• /
• pp.9-13
• /
• 1998

Large vacuum Bridgman-Stockbarger (BS) equipments was composed for growing large diameter CaF2 crystals. The CaF2 crystal of 4.5-inch was grown under the conditions of freezing temperature gradient of 12$^{\circ}C$/cm and growing rate of 3mm/hr. Also the 6-inch crystal was grown by using thermal stabilization method under freezing temperature gradient of 14$^{\circ}C$/cm and growing rate of 2mm/hr. The dislocation density was characterized for evaluating the quality of crystals. And the optical properties such as transmittance, refractive index and fluorescence were analyzed in order to investigate on the applications of optical components.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.09a
• /
• pp.21-25
• /
• 1998

An experimental investigation on flow pattern was carried out in molten Woods metal using an incorporated magnet probe to determine the velocity field in a Woods metal model of Czochralski crystal growth system. The local velocities in Woods metal were obtained 3-dimensionally at numerous positions of large crucible by measuring the voltage induced in the melt. Since there have not been a lot of the model experiments on the velocity distributions in the large size of melt with low Prandtl number for Czochralski crystal growth system, the present paper aims to give useful guidelines for e analysis of fluid flow in Czochralski growth system.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.1
• /
• pp.19-24
• /
• 1995

Large size potassium lithium niobate (KLN) crystals with dimensions of $8{\times}6{\times}2 mm^3$ were grown by the top - seeded solution growth (TSSG) method. The extraordinary refractive index $n_e$at the second harmonic frequency for KLN crystal depends on the composition and decreases in this crystal due to the large Li content. KLN crystal was characterized by observation in UV - VIS spectrometry. It is transparent from the ultraviolet to infrared spectral regions that the transmission limit and cut- off wavelength are about 350 and 380 nm.

• Journal of computational fluids engineering
• /
• v.3 no.1
• /
• pp.100-107
• /
• 1998

A numerical analysis of thermal stress over temperature variations near the crystal-melt interface is carried out for a floating-zone growth of Cadmium Telluride (CdTe). Thermocapillary convection determines crystal-melt interfacial shape and signature of temperature in the crystal. Large temperature gradients near the crystal-melt interface yield excessive thermal stresses in a crystal, which affect the dislocations of the crystal. Based on the assumption that the crystal is elastic and isotropic, thermal stresses in a crystal are computed and the effects of operating conditions are investigated. The results show that the extreme thermal stresses are concentrated near the interface of a crystal and the radial and the tangential stresses are the dominant ones. Concentrated heating profile increases the stresses within the crystal, otherwise, the pulling rate decreases the stresses.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.2
• /
• pp.129-134
• /
• 1995

Bulk properties of single crystals $KMnCl_3$ undoped and Mg- doped $LiNbO_3$ were examined by using the neutron scattering technique. This study shows that the good -looking samples by polarized light have to be examined by the. neutron scattering to ensure the bulk properties of single crystal. Large mosaic spread in KMnCb indicated the crystal is not in a single domain. Many parts are relatively randomly directed against crystal axis with close angle each other. For the small mosaic spread of Li~ in the scattering pattern, it is found that some large domains have close orientations. Mg doped Li~ is turned out to be a well grown one.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.18 no.4
• /
• pp.137-139
• /
• 2008

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.9 no.1
• /
• pp.75-80
• /
• 2000

This paper deals with the precision cutting characteristics of mono-crystal diamonds poly-crystal diamonds and tungsten carbide tool on ductile material. The cutting tests were carried out under various uncut chip areas and 20${\mu}{\textrm}{m}$ depth of engagement. The machinability in precision machining was discussed from the viewpoints of the normal cutting forces and the surface roughness of the workpiece. As the feed rate decreases the normal force difference for cutting edge radii appears to large. In various cutting edge radii the surface roughness difference when cut the copper which is ductile material than the aluminium alloy is large. As the same cutting condition the hardness value on cut surface with the diamond tool appears to be smaller than that of the tungsten carbide tool.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1999.06a
• /
• pp.129-157
• /
• 1999

Low-dislocation-density large-diameter GaAs single crystals with low-residual-strain have been strongly required. We have developed dislocation-free 3-inch Si-doped GaAs crystals for photonic devices [1], and low-dislocation-density low-residual-strain 4-inch to 6-inch [2, 3] semi-insulating GaAs crystals for electronic devices by Vertical Boat (VB) technique. We confirmed that VB substrates with low-residual-strain have higher resistance against slip-line generation during MBE process. VB-GaAs single crystals show uniform radial profile of resistivity reflecting to the flat solid-liquid interface during the crystal growth. Uniformity of micro-resistivity of VB-GaAs substrate is much better than that of the LEC-GaAs substrate, which is due to the low-dislocation-density of VB-GaAs single crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.1 no.1
• /
• pp.117-126
• /
• 1991

Silicon single crystal is the most frequently used materials for the semiconductor device fabrication, The crystal growth techniques have been steadily improving for achieving a greater degree of crystal perfection and large ingot size. This report present the advantages, disadvantages and technical problems of the various crystal pulling technique briefly on the economic impact of productivity. Also, future directions of the pulling technique and process including the economical and quantitative aspects are deal with.