• Title/Summary/Keyword: Large crystal

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Finite element analysis of transient growth of GaAs by horizontal Bridgman method (수평브릿지만법에 의한 갈륨비소 과도기 성장의 유한요소 해석)

  • 김도현;민병수
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.1
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    • pp.19-31
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    • 1996
  • To invetigate the impurity distribution in GaAs crystal grown by horizontal Bridgman method, we constructd the mathematical model describing heat transfer, mass transfer and fluid flow n transient growth of GaAs. Galerkin finite element method and implicit time integration were used to solve the equations and simulate the transient growth. The concentration distribution is similar to the case of diffusion controlled growth when Gr - 0. With the increase of Gr the concentration profile is distroted and the minimum solute concentration appears near the interface. As solidification prosceeds, interface deflection increases steadily and transverse segregation increases until mixing by flow becomes steady. The axial segregation increases with solidification. But, with high intensity of flow axial segregation becomes steady after short transient. At small and large Gr the result showed a good agreememt with the prediction Smith and Scheil.

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A study of faraday rotation for $Cd_{1-x}Mn_{x}Te$ single crystals ($Cd_{1-x}Mn_{x}Te$단결정의 Faraday 회전에 관한 연구)

  • 박효열
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.10 no.4
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    • pp.286-291
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    • 2000
  • $Cd_{1-x}Mn_{x}Te$ singe crystals were grown by the vertical Bridgman method and the Faraday rotations were measured as a function of wavelength and magnetic field. The Verdet constants were evaluated using the result of Faraday rotation. The Verdet constants were maximum at nearly absorption edge and increased for $0\leq x \leq 0.38 $ but decreased for x>0.40. We found that large Faraday rotation occur in $Cd_{0.62}Mn_{0.38}Te$ at nearly absorption edge wavelength was more useful for a magnetic field sensor than any other crystals, and $Cd_{0.60}Mn_{0.40}Te$ crystal was useful in this application when wavelength is He-Ne laser wavelength.

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Morphological study on non-seeded grown AlN single crystals (무종자결정 상에 성장된 AlN 결정의 형태학적 연구)

  • Kang, Seung-Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.6
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    • pp.265-268
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    • 2012
  • The growth of AlN single crystals of large size and good quality is of prime importance for UV LEDs and power devices applications. However, the crystals having the size of more than 1 inch and high quality have not been reported in the world. In the PVT growth of AlN, the crystal morphology of as grown were important because the preferred orientation of growth of it was evaluated for growth rate increase. In the present study, the AlN single crystals grown by PVT process were evaluated by the side of the growth morphology. Optical microscopic characterization was carried out to observe the shape of the crystals and the growth facets. Furthermore the growth habit of it were discussed by observation of the surface of AlN crystals.

Fundamentals of Liquid Crystal and Liquid Crystal Optics (액정의 비등방 물성 및 광학 특성)

  • Yu, Chang-Jae;Lee, Sin-Doo
    • Korean Journal of Optics and Photonics
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    • v.24 no.4
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    • pp.159-167
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    • 2013
  • The liquid crystal(LC) display is the most promising technology of the flat panel displays covering all applications from small mobile to large television applications. To understand the operating principles and improve the performances of the various LC displays, one should grasp the anisotropic nature of the LC and the propagation of light in the anisotropic media. Basic formulas governing the distribution of the LC molecules, directly related to the electro-optic effects of the LC devices, are described in view of the macroscopic interaction. Based on the matrix representation, the polarization analysis for the LC devices is also presented.

Crystal Structure of Antimony-sorbed Indium-exchanged Zeolite A (인디움 제올라이트 A의 안티몬 흡착과 결정구조)

  • Lim, Woo Taik;Lee, Hyun Su;Heo, Nam Ho
    • Analytical Science and Technology
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    • v.16 no.5
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    • pp.375-390
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    • 2003
  • A single crystal of fully indium-exchanged zeolite A (In-A) was brought into contact with antimony in a fine Pyrex capillary at $350^{\circ}C$ for 6 days. The reaction was monitored by electron-probe X-ray microanalysis (EPXMA). The crystal structure of antimony-sorbed indium-exchanged zeolite A has been determined by single-crystal X-ray diffraction techniques at $21^{\circ}C$ in the cubic space group Pm ${\bar{3}}m$. The crystal structure of $In_8Si_{12}Al_{12}O_{48}{\cdot}(In)_{1.35}(Sb)_{0.7}$ ($a=12.111(2){{\AA}}$, $R_1=0.071$, and $R_2=0.067$) has 8 indium cations, 1.35 indium atoms, and 0.7 antimony atoms per unit cell. Unit cell 1 ($In_8-A{\cdot}In$, 65% of unit cells) contain the $(In_5)^{8+}$ cluster. In unit cell 2 ($In_8-A{\cdot}(In)_2(Sb)_2$, 35% of unit cells), two $(In_3)^{2+}$ cluster and one $(In_3Sb_2)^{7+}$ cluster are found in the large cavity.

A study on the synthesis and crystal growth of the MFI type zeolite, silicalite under highgravity (고중력에서 MFI 형 Zeolite 인 Silicalite 결정의 합성 및 성장에 관한 연구)

  • Kim, Wha-Jung;Lee, Joon
    • Applied Chemistry for Engineering
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    • v.2 no.2
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    • pp.97-107
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    • 1991
  • Highly-siliceous dealuminated zeolite, silicalite(end member of ZSM-5) was synthesized from a batch composition of 2.55 $Na_2O-5.0$ TPABr-$100SiO_2-2800H_2O $ at $180^{\circ}C$ and at times ranging from one to seven days of reaction time. Autoclaves containing the synthesis mixture were centrifuged within the specially-equipped convection oven to provide an elevated gravitational force field like 30 and 50 G. Tests were also conducted at normal gravity. For synthesis performed under elevated gravities, average and maximum crystal sizes were substantially greater than those synthesized under normal gravity and product yields were also found to be affected by elevated gravity ; that is, product yields were substantially enhanced under elevated gravity from 4 % to 55 % with respect to normal gravity. The average crystal sizes of silicalite synthesized at normal gravity were 50 to $70{\mu}m$ over an entire range of reaction time, one to seven days while the average crystal sizes synthsized under elevated gravities, 30 and 50 G, were 160 to $190{\mu}m$ respectively. For the elevated gravity, in particular, two separate nucleations and growths were observed. For examples, at 50G, large crystals of $200{\mu}m$ were produced through the second growing stage after 5 days of reaction following the rapid first growing stage where fairly large crystals of $135{\mu}m$ were produced only in 2 days of reaction. The maximum crystal sizes obtained through the above two growing stages were 190 and $300{\mu}m$, respectively. A discussion of how elevated gravity affects nucleation, growth, yield and crystal size of silicalite is presented.

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Reaction of Dehydrated Ag$_2$Ca$_5$-A with Cesium. Crystal Structures of Fully Dehydrated Ag$_2$Ca$_5$-A and Ag$_2$Cs$_{10}$-A

  • Kim, Yang;Song, Seong-Hwan;Park, Jong-Yul;Kim, Un-Sik
    • Bulletin of the Korean Chemical Society
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    • v.10 no.3
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    • pp.243-247
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    • 1989
  • Two crystal structures of dehydrated $Ag^+\;and\;Ca^{2+}$ exchanged zeolite A, $Ag_2Ca_$5-A, reacting with 0.01 Torr of Cs vapor at $200^{\circ}C$ for 2 hours and 0.1 Torr of Cs vapor at $250^{\circ}C$ for 48 hours, respectively, have been determined by single crystal X-ray diffraction techniques. Their structures were solved and refined in the cubic space group Pm3m at $21(1)^{\circ}C$. The stoichiometry of first crystal was $Ag_2Ca_5$-A (a = 12.294(1)${\AA}$), indicating that Cs vapor did not react with cations in zeolite A and that of second crystal was $Ag_2Cs_{10}$-A (a = 12.166(1)${\AA}$), indicating that all $Ca^{2+}$ ions were reduced by Cs vapor and replaced by $Cs^+$ ions. Full-matrix least-squares refinements of $Ag_2Ca_5-A\;and\;Ag_2Cs_{10}$-A has converged to the final error indices, $R_1\;=\;0.041\;and\;R_2$ = 0.048 with 227 reflections, and $R_1\;=\;0.117\;an\;n\;fdd\;R_2$ = 0.120 with 167 reflections, respectively, for which I > $3{\sigma}$(I). In the structure of $Ag_2Ca_5$-A, both $Ag^+$ ions and $Ca^{2+}$ ions lie on two crystal symmetrically independent threefold axis sites on the 6-rings; $2\;Ag^+$ ions are recessed 0.33 ${\;AA}$ from the (111) planes of three O(3) oxygens and 5 $Ca^{2+}$ ions lie on the nearly center of each 6-oxygen planes. In the structure of $Ag_2Cs_{10}-A,\;Cs^+$ ions lie on the 5 different crystallographic sites. 3 $Cs^+$ ions lie at the centers of the 8-rings at sites of D4h symmetry. 6 $Cs^+$ ions lie on the threefold axes of unit cell: $4\;Cs^+$ ions are found deep in the large cavity and 2 $Cs^+$ ions are found in the sodalite cavity. One $Cs^+$ ion is found in the large cavity near a 4-ring.

New Generation Color Filter Technology in TFT-LCD

  • Koo, Horng Show
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.408-411
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    • 2004
  • Color filter is a fundamental and necessary component to make a full-color TFT-LCD, its quality intensively influence the performance of TFT-LCD in the application of Notebook Computer, Monitor and Television. Color filter in chromaticity also make an effect for human visual system and video enjoyment. Recently, mother glass size is enlarged for demand of large-size panels and new generation color .filter technology for large-size liquid crystal cell panels is also developed. Here, latest generation color filter technology in TFT-LCD will be discussed.

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Design and testing large FOV retinal displays on the basis holographic combiner

  • Gan, Mikhail A.;Gan, Iacov M.;Tchertkov, Alexander S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.442-445
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    • 2004
  • We report principles and results of design large FOV retinal display systems by software WinDEMOS and software for computer testing display systems TEDiS. We discuss results design head mounted and head up display. As combiner we are used volume interference recorded or synthetic HOE, and as the sours of the image high resolution transmitting or reflective liquid crystal matrixes on silicon (LCOS) or CRT.

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The Fabrication of the Single Crystal Wire from Cu Single Crystal Grown by the Czochralski Method and its Physical Properties (Czochralski법을 이용한 금속 단결정의 성장과 구조적, 전기적 성질에 관한 연구)

  • Park, Jeung-Hun;Cha, Su-Young;Park, Sang-Eon;Kim, Sung-Kyu;Cho, Chae-Ryong;Park, Hyuk-K.;Kim, Hyung-Chan;Jeong, Myung-Hwa;Jeong, Se-Young
    • Korean Journal of Crystallography
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    • v.16 no.2
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    • pp.141-148
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    • 2005
  • It is well known that the general metals have a lot of grain boundaries. The grain boundaries play a negative role to increase the resistivity and to decrease the conductivity. The small resistivity and the large conductivity have been a goal of the material scientists, and no signal noise, perfect signal transfer, and the realization of the real sound are the dream of electronic engineers and audio manias. Generally, oxygen free copper (OFC) and Ohno continuous casting (OCC) copper cables have been used for the purpose of the precise signal transfer and low noise. However they still include a lot of grain boundaries. In our study, we have grown the single crystal by the Czochralski method and succeeded to produce single crystal wires from the crystal in the dimension of $0.5{\times}0.5{\times}2500mm$. The produced wire still possesses very good single crystal properties. We observed the structure of the wire, and measured the resistance and impedance. Glow Discharge Spectrometer (GDS) was used for analyzing the compositions of copper single crystals and commercial copper. Current-Voltage curve, resistance, total harmonic distortion and speaker frequency response were measured for comparing electrical and acoustic properties of two samples.