• Title/Summary/Keyword: Large crystal

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3-Dimensional NiCo2O4 nanostructure prepared by hydrothermal process and its application for glucose sensor (수열합성에 의한 3차원 구조의 NiCo2O4 제조 및 글루코스 센서로서의 응용)

  • Jang, Kyu-bong;Mhin, Sungwook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.2
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    • pp.78-83
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    • 2021
  • In this study, we prepared NiCo2O4 nanoparticles with large surface area by hydrothermal synthesis. In order to optimize the processing conditions for spinel NiCo2O4 nanoparticles with large surface area, experimental variables including concentration of Ni and Co precursor, reaction time, and temperature for post-heat treatment were evaluated. Optimized conditions for spinel NiCo2O4 with large surface area were [Ni]/[Co] 1:2 ratio, reaction time for 12 h, and post-heat treatment at 400℃. To investigate the feasibility as potential application for glucose sensor, electrochemical tests of the prepared NiCo2O4 nanoparticles in response to glucose was performed, which suggests that the NiCo2O4 can be suitable for a non-enzymatic-based electrochemical glucose sensor based on its high sensitivity and selectivity for glucose detection.

Photoalignment of Liquid Crystal on Silicon Microdisplay

  • Zhang, Baolong;Li, K. K.;Huang, H. C.;Chigrinov, V.;Kwok, H. S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.295-298
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    • 2003
  • Reflective mode liquid crystal on silicon (LCoS) microdisplay is the major technology that can produce extremely high-resolution displays. A very large number of pixels can be packed onto the CMOS circuit with integrated drivers that can be projected to any size screen. Large size direct-view thin film transistor (TFT) LCDs becomes very difficult to make and to drive as the information content increases. However, the existing LC alignment technology for the LCoS cell fabrication is still the mechanical rubbing method, which is prone to have minor defects that are not visible normally but can be detrimental if projected to a large screen. In this paper, application of photo-alignment to LCoS fabrication is presented. The alignment is done by three-step exposure process. A MTN $90^{\circ}$ mode is chose as to evaluate the performance of this technique. The comparison with rubbing mode shows the performance of photo-alignment is comparable and even better in some aspect, such as sharper RVC curve and higher contrast ratio.

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A Study on a Morphological Identification of Notoginseng Radix (삼칠근(三七根)의 형태(形態)에 관한 연구(硏究))

  • Moon, Seong-Ho;Lee, Young-Jong
    • The Korea Journal of Herbology
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    • v.23 no.2
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    • pp.25-31
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    • 2008
  • Objectives : In order to distinguish morphological characteristics of trunk bark and root bark of Ulmus davidiana var. japonica (Rehder) Nakai and the trunk bark and root bark of Hemiptelea davidii Planchon were sampled and compared in terms of their external and internal features with flour states according to their medical use, through microscopic examination. Methods : The slice of the tested material made by paraffin section technique was colored with Safranine Malachite Green contrast methods, and the flour of it was mounted by the liquid made by the same ratio of each of glycerin, acetic acid, and water, and then observed and photographed by olymphus-BHT. Results : 1. Internal Features 1) A large parenchymatous cell was observed in the phloem of the slice of both trunk bark and root bark of Ulmi Cortex, However, both of the trunk bark and root bark of Hemipteleae Cortex did not have parenchymatous cell in the phloem; instead, stone cells including much square crystal of calcium oxalate were distributed around fiber bundle, and the parenchymatous cell included much druse crystal of calcium oxalate. 2) In both the Ulmi Cortex and Hemipteleae Cortex, rhytidome was observed in trunk bark, but not in root bark, but in the parenchymatous cell of the root bark of the Ulmi Cortex contained starch grain. 2. Flour States 1) In the flour of root bark of the Ulmi Cortex, a large parenchymatous cell was observed. However, in the flour of trunk bark and root bark of Hemipteleae Cortex, no parenchymatous eel was found; instead, stone cell including square crystal of calcium oxalate and druse crystal of calcium oxalate were observed. 2) There was no remarkable difference between the trunk bark and root bark of Hemipteleae Cortex. However, starch grain was contained in the parenchymatous cell of the root bark of Ulmi Cortex but not in the trunk bark of it. Conclusions : There were some morphological differences in external, internal, and flour parts of Ulmi Cortex and Hemipteleae Cortex. In particular, there was a morphological difference in flour states between the trunk bark and root bark of Ulmi Cortex, it is possible to use microscope to distinguish their flour states.

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Fiber Interferometers Based on Low Loss Fusion Splicing of Photonic Crystal Fibers (저손실 융착접속을 이용한 광자결정 광섬유 간섭계)

  • Ahn, Jin-Soo;Kim, Gil-Hwan;Lee, Kwan-Il;Lee, Kyung-Shik;Lee, Sang-Bae
    • Korean Journal of Optics and Photonics
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    • v.21 no.5
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    • pp.200-205
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    • 2010
  • We report temperature and strain sensing characteristics of two kinds of in-line fiber interferometers. One interferometer consists of a section of Hollow Optical Fiber(HOF) spliced between two Photonic Bandgap Fibers(PBGF) and the other is built by splicing a section of HOF between two Large Mode Area-Photonic Crystal Fibers(LMA-PCF). To minimize the splice losses, we carefully optimized the heating time and arc current of the splicer so as not to collapse the air holes of the fiber. It is found that the first interferometer has a temperature sensitivity of 15.4 pm/$^{\circ}C$ and a strain sensitivity of 0.24 pm/${\mu}\varepsilon$. The other interferometer exhibits a temperature sensitivity of 17.4 pm/$^{\circ}C$ and a strain sensitivity of 0.2 pm/${\mu}\varepsilon$.

Crystal Structures of Dehydrated $Ag^{+}\;and\;Ca^{2+}$ Exchanged Zeolite A, $Ag_{3.3}Ca_{4.35}$-A and of Its Ethylene Sorption Complex

  • Se Bok Jang;Jong Yul Park;Yunghee Oh Kim;Yang Kim
    • Bulletin of the Korean Chemical Society
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    • v.14 no.1
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    • pp.82-86
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    • 1993
  • Two crystal structures of dehydrated $Ag_{3.3}Ca_{4.35}-A ({\alpha} = 12.256(2){\AA})$ and of its ethylene sorption complex (${\alpha} = 12.259(2){\AA}$) have been determined by single-crystal X-ray diffraction techniques in the cubic space group Pm3m at 21(l)$^{\circ}$C. Both crystals were dehydrated at 360$^{\circ}$C and $2{\times}10^{-6}$ Torr for 2 days and one crystal was treated with 200 Torr of ethylene at 24(2)$^{\circ}$C. The structures were refined to final error indices, $R_1$=O.065 and $R_2$ = 0.088 with 202 reflections and $R_1$=0.049 and $R_2$ = 0.044 with 259 reflections, respectively, for which I>3${\sigma}$(I). In these structures, all Ag$^+$ and Ca$^{2+}$ ions are located on two and three different threefold axes associated with 6-ring oxygens, respectively. In $Ag_{3.3}Ca_{4.35}-A{\cdot}6.65\;C_2H_4,\;3.3\;Ag^+\;and\;3.35\;Ca^{2+}$ ions are recessed 1.09 ${\AA}$ and 0.21 ${\AA}$, respectively, into the large cavity from the (111) plane at O(3). Each Ag$^+$ and Ca$^{2+}$ ion in the large cavity forms a complex with one $C_2H_4$$^{2+}$ ions and ethylene molecules are longer than those between Ag$^+$ ions and ethylene molecules.

A Study on the Growth Rate and Surface Shape of Single Crystalline Diamond According to HFCVD Deposition Temperature (HFCVD 증착 온도 변화에 따른 단결정 다이아몬드 표면 형상 및 성장률 변화)

  • Gwon, J.U.;Kim, M.S.;Jang, T.H.;Bae, M.K.;Kim, S.W.;Kim, T.G.
    • Journal of the Korean Society for Heat Treatment
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    • v.34 no.5
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    • pp.239-244
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    • 2021
  • Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

Analysis of calcium fluoride single crystal grown by the czochralski method (초크랄스키 방법으로 성장한 CaF2 단결정 분석)

  • Lee, Ha-Lin;Na, Jun-Hyuck;Park, Mi-Seon;Jang, Yeon-Suk;Jung, Hea-Kyun;Kim, Doo-Gun;Lee, Won-Jae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.6
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    • pp.219-224
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    • 2022
  • CaF2 single crystal has a large band gap (12 eV), and it is used for optical windows, prisms, and lenses due to its excellent transmittance in a wide wavelength range and low refractive index. Moreover, it is expected to be one of the materials for ultraviolet transmissive laser optical components. CaF2 belongs to the fluoride compounds and has a face-centered cubic (FCC) structure with three sub-lattices. The representative method for CaF2 single crystal growth is Czochralski, which method has the advantages of high production efficiency and the ability to make large crystals. In this study, X-ray diffraction (XRD), X-ray rocking curves (XRC) measurement, and chemical etching were performed to analyze the crystallinity and defect density of the CaF2 single crystals, grown by the Czochralski method. Fourier-transform infrared spectroscopy (FT-IR) and UV-VIS-NIR spectroscopy systems were used to investigate the optical properties of the CaF2 crystal. The provability of various applications, including UV application, was systematically investigated with various analysis results.

Crystallographic Studies of Dehydrated $Ag^{+}\;and\;K^{+}$ Exchanged Zeolite A Reacted with Alkali Metal Vapor

  • Yang Kim;Mi Suk Jeong;Karl Seff
    • Bulletin of the Korean Chemical Society
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    • v.14 no.5
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    • pp.603-610
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    • 1993
  • The crystal structure of dehydrated $Ag_{5.6}K_{6.4}-A$, zeolite A ion-exchanged with $K^+\;and\;Ag^+$ as indicated and dehydrated at 360$^{\circ}$C, has been determined by single-crystal X-ray diffraction techniques. Also determined were the structures of the products of the reactions of this zeolite with 0.1 Torr of Cs vapor at 250$^{\circ}$C for 48 h and 72 h, and with 0.1 Torr of Rb vapor at 250$^{\circ}$C for 24 h. The structures were solved and refined in the cubic space group Pm3m at 21(l)$^{\circ}$C (a= 12.255(l) ${\AA}$ , 12.367(l) ${\AA}$, 12.350(l) ${\AA}$, and 12.263(l) ${\AA}$, respectively). Dehydrated $Ag_{5.6}K_{6.4}$-A was refined to the final error indices $R_1= 0.044\;and\;R_2=0.037$ with 202 reflections for which I>3${\sigma}$(I). The crystal structures of the reaction products were refined to $R_1=0.087\;and\;R_2= 0.089$ with 157 reflections, $R_1=0.080\;and\;R_2= 0.087$ with 161 reflections, and $R_1= 0.071\;and\;R_2=0.061$ with 88 reflections, respectively. In the structure of $Ag_{5.6}K_{6.4}-A,\;K^+$ ions block all 8-oxygen rings, and one reduced Ag atom is found per sodalite cavity. Also, ca. 4.6 $Ag^+ ions\;and\;3.4 K^+ ions$ are found at 6-ring sites in the large cavity. The crystal structures of the reaction products show that all $K^+$ and $Ag^+$ ions have been reduced, and that all K^+$ atoms have left the zeolite. Cs or Rb species are found at three different crystallographic sites: 3.0 $Cs^+\;or\;3.0Rb^+$ ions per unit cell occupy 8-ring centers, ca. 8.0 $Cs^+ ions\;or\;5.7 Rb^+$ ions, are found on threefold axes opposite 6-rings deep in the large cavity, and ca. 2.5 $Cs^+\;or\;2.3 Rb^+ ions are found on threefold axes in the sodalite unit. Also, 1 $Rb^+$ ion lies opposite a 4-ring. Silver atoms, corresponding to 75% or 40% occupancy of hexasilver clusters stabilized by coordination to $Cs^+\;or\;Rb^+$ ions, are found at the centers of the large cavities. In the crystal structures of dehydrated Ag_{5.6}K_{6.4}-A$ reacted with Cs vapor, excess Cs atoms are absorbed and these form (locally) cationic clusters such as $(Cs_4)3^+\;and\;(Cs_6)4^+$.

Crystallographic Study on the Selectivity and Distribution of Sr2+ Ions Within Zeolite A In the Presence of Competing Na+ Ions in Aqueous Exchange Solution (Na+ 경쟁이온이 존재하는 수용액에서 Zeolite A 내 Sr2+ 이온의 선택성 및 분포에 관한 결정학적 연구)

  • kim, Hu Sik;Park, Jong Sam;Lim, Woo Taik
    • Korean Journal of Mineralogy and Petrology
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    • v.35 no.1
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    • pp.41-50
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    • 2022
  • To study the properties of Sr2+ exchange into zeolite A with increasing the molar concentration of Na+ in given exchange solution, four single crystals of fully dehydrated Sr2+- and Na+- exchanged zeolite A were prepared by the bath method using mixed ion-exchange solutions. The Sr(NO3)2:NaNO3 molar rations of the ion exchange solution were 1:1(crystal 1), 1:100(crystal 2), 1:250(crystal 3), and 1:500 (crystal 4), respectively, with a total concentration of 0.05 M. The single-crystals were then vacuum dehydration at 623 K and 1×10-4 Pa for 2 days. Their single-crystal structures were determined by single-crystal synchrotron X-ray diffraction techniques in the cubic space group Pm3-m, at 100(1) K, and were then refined to the final error indices of R1/wR2=0.047/0.146, 0.048/0.142, 0.036/0.128, and 0.040/0.156 for crystals 1, 2, 3, and 4, respectively. In crystals 1 and 2, the 6 Sr2+ ions are found at three different crystallographic sites. In crystal 3, 1 Sr2+ and 10 Na+ ions are found in large cavity and sodalite unit. In crystal 4, only 12 Na+ ions occupy three equipoints. The degree of Sr2+ ion-exchange decreased sharply from 100 to 16.7 to 0% as the initial Na+ concentration increase and the Sr2+ concentration decrease. In addition, the unit cell constant of the zeolite framework decreased with this lower level of Sr2+ exchange.

Nearly single crystal, few-layered hexagonal boron nitride films with centimeter size using reusable Ni(111)

  • Oh, Hongseok;Jo, Janghyun;Yoon, Hosang;Tchoe, Youngbin;Kim, Sung-Soo;Kim, Miyoung;Sohn, Byeong-Hyeok;Yi, Gyu-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.286-286
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    • 2016
  • Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

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