• 제목/요약/키워드: Langmuir-Blodgett(LB} film

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Eicosanoic Acid Langmuir-Blodgett(LB) 박막을 이용한 분자 다이오드의 전기적 특성 (Electrical Properties of Molecular Diode Using Eicosanoic Acid Langmuir-Blodgett(LB) Monolayer Film)

  • 구자룡;이호식;권혁주;손병청
    • 한국응용과학기술학회지
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    • 제20권2호
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    • pp.148-153
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    • 2003
  • Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

폴리이미드와 인지질 혼합물의 나노 Langmuir-Blodgett막의 전기화학적 특성에 관한 연구 (A Study on the Electrochemical Properties of Langmuir-Blodgett Nano-film Mixed with Polyimide and Phospholipid)

  • 박근호
    • 한국응용과학기술학회지
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    • 제29권3호
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    • pp.421-428
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    • 2012
  • 우리는 순환전압전류법에 의한 폴리이미드와 인지질혼합 나노LB 필름에 대한 전기화학적 특성을 조사하였다. polyamic acid와 인지질 단분자 LB막은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 전기화학적 특성은 $KClO_4$ 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업 전극)으로 순환전압전류법을 사용하여 측정하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s였다. 그 결과 polyamic acid와 인지질 혼합물의 LB 필름은 순환전압전류도표로부터 환원전류로 인한 비가역공정으로 나타났다. Polyamic acid와 인지질혼합 LB막에서 확산계수(D)효과는 LAPC를 사용한 경우가 LLPC를 사용한 것 보다 확산계수 값이 적었다.

Langmuir-Blodgett법으로 제조한 기능성 폴리이미드 초박막의 전기화학적 특성 (Electrochemical Properties of Ultrathin Film Prepared Functional Polyimide by Langmuir-Blodgett Method)

  • 박근호;민창훈;손태철
    • 한국응용과학기술학회지
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    • 제26권4호
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    • pp.400-406
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    • 2009
  • We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

Langmuir-Blodgett(LB) 유기 초박막의 열자격 변위 전류에 관한 연구 (A Study on the Thermally-Stimulated Displacement Current (TSDC) of the Organic Ultra-Thin Langmuir-Blodgett(LB) Films)

  • 이호식;이원재;김태완;;강도열
    • 한국전기전자재료학회논문지
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    • 제11권8호
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    • pp.581-586
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    • 1998
  • This paper describes athermally stimulated displacement current (TSDC) of arachidic acid(AA) and polyamic acid alkylamine salts(PAAS) Langmuir-Blodgett(LB) films, which is a precursor of polyimide(PI). The TSDC measurements of AA LB film were performed from temperature to about 11$0^{\circ}C$ at a rate of 0.2$^{\circ}C$/s inside a vacuum chamber for a reference. And the TSDC measurements PAAS LB film were performed from room temperature to about 25$0^{\circ}C$ and temperature was increased at the same rate as that of AA LB film. They show that there are TSDC peaks at about 7$0^{\circ}C$ in the arachidic acid LB films, and at about 7$0^{\circ}C$ and 16$0^{\circ}C$ in the PAAs LB films. Results of these measurements indicate the one small peak at 7$0^{\circ}C$ is resulted from a softening of the alkyl group and the large peak at 16$0^{\circ}C$ is possibly due to dipole of C-O group in the PASS molecule. We have calculated the vertical component of the AA and PAAs L film out of the TSDC curves. It shows that the dipole moment of the AA LB film is about 70-mD at 7$0^{\circ}C$. And the dipole moment of PAAS LB film is about 040mD at 7$0^{\circ}C$ and about 200mD at 16$0^{\circ}C$ in the first measurement of TSDC. In the second measurement of TSDC of PASS LB film after cooling down to room temperature, the TSDC peaks are almost disappeared.

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Fabrication of Protein A-Viologen Hetero Langmuir- Blodgett Film for Fluorescence Immunoassay

  • Lee, Woochang;Chun, Bum-Suk;Oh, Byung-Keun;Lee, Won-Hong;Park, Jeong-Woo
    • Biotechnology and Bioprocess Engineering:BBE
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    • 제9권4호
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    • pp.241-244
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    • 2004
  • Protein A molecular thin film was fabricated as a platform of antibody-based biosensor. For the immobilization of the protein A thin film, a viologen multilayer was built up using the Langmuir-Blodgett (LB) technique, and then, protein A was adsorbed on the viologen LB film by an electrostatic interaction force, which was formed as a hetero-film structure. For the deposition of viologen, surface pressure area ($\pi$-A) isotherm was investigated. The fabricated protein A-viologen hetero LB film was investigated using atomic force microscopy (AFM). Using the developed molecular film, antibody immobilization and fluorescence measurement was carried out.

LB법에 의한 분자소자의 기초연구 (I) (A Basic Study on Molecular Electronic Device by Langmuir-Blodgett Technique)

  • 권영수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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    • pp.98-100
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    • 1989
  • Langmuir-Blodgett(LB) technique will be used to produce ultra thin film, and then characterization of the physical and electrical properties of LB ultra thin films, this study will be an investigation for the possibilities of the ultra thin films as an Molecular Electronic Device.

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(N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 Langmuir-Blodgett막의 전기적 특성 (Electrical Properties of (N-docosyl quinolinium)-TCNQ(1 :2) Charge Transfer Complex Langmuir-Blodgett Films)

  • 정순욱;정회걸
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.143-146
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    • 1999
  • In this study, Ultra-thin films of (N-ducosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. By measure of UV-vis spectra and capacitance, deposition status was confirmed together with the thickness of natural oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The electrical properties of (N-docosyl 7uin7linium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction uf either vertical or horizontal axis is results in a quite different value.

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LB 법을 이용한 새로운 유기물의 전기 발광 소자에 관한 연구 (Electroluminescence device of the new organic materials using Langmuir-Blodgett(LB) method)

  • 이호식;이원재;박종욱;김태완;강도열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.601-604
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    • 1999
  • Electroluminescence(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. Recently, many EL researcher have interested a new emissive organic material. In this study, light-emitting organic electroluminescent devices were fabricated using Langmuir-Blodgett(LB) technique with new emissive organic material. This new emissive organic material were synthesis by our teams and we called PECCP [poly(3,6-N-2ethylhexyl carbazoly cyanoterephthalidene)] which has strong electron donor group and electron acceptor group in main chain repeat unit. This material has good solubility in common organic solvent such as chloroform. THF, etc. and has a good stability in air. In here, the new emissive material is applied to Langmuir-Blodgett(LB) method because our new material has a good stability in air. Optimum conditions of film deposition were examined by a surface pressure-area( $\pi$ -A) isotherms with various factors. The LB film were deposited on a indium Tin Oxide(ITO) glass. We were investigated by measuring current-voltage(I-V) characteristics. Also we were measured the UV/visible absorption at about 410nm and PL spectrum at about 530nm. We are attempt to the electroluminescence device properties of the new emissive material by Langmuir-Blodgett(LB) technique.

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Langmuir-Blodgett법을 이용한 (N-docosyl quinolinium)-TCNQ(1:2) 착물의 초박막 제작 (Fabrication of Ultra Thin Films with (N-docosyl quinolinium)-TCNQ(1:2) complex by the Langmuir -Blodgett Technique)

  • 정순욱;정회걸
    • 한국재료학회지
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    • 제9권12호
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    • pp.1229-1233
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    • 1999
  • 본 연구에서는 (N-docosyl quinolinium)-TCNQ (1:2) 착물의 LB초박막을 제작하였다. LB막의 누적을 위한 최적조건을 구하기 위하여 subphase 온도, barrier 압축속도 및 분산량을 변화시키면서 표면압-면적(${\pi}$-A) 등온선 특성을 측정하였다. 그리고 전이비, UV-vis의 최대 흡광도, 정전용량 및 두께를 측정하여 LB막의 누적상태를 확인하였다. 그 결과 분자수준으로 잘 제어된 양호한 LB막이 제작되었음을 알 수 있었다..

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인지질 화합물의 나노 Langmuir-Blodgett막의 전기화학적 특성에 관한 연구 (A Study on the Electrochemical Characteristics of Langmuir-Blodgett Nano-Films of Phospholipid Compound)

  • 정아진;박근호
    • 한국응용과학기술학회지
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    • 제29권2호
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    • pp.311-316
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    • 2012
  • 우리는 순환전압전류법에 의한 LB 필름에 대한 전기화학적 특성을 조사하였다. 인지질 화합물은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 0.5, 1.0, 1.5 및 2.0 N $NaClO_4$ 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업전극)으로 순환전압전류법을 사용하여 전기화학적 측정을 시도하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기전위인 -1350 mV로 환원시켰다. 그 결과, 인지질 화합물의 LB 필름은 순환전압전류도표로부터 오직 산화전류로 인한 비가역공정으로 나타났다. LB 필름의 확산계수(D) 효과는 인지질 화합물 양의 증가로 인하여 감소하였다.