• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.6
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• pp.231-238
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• 2022

To secure the mechanical strength of porous Al₂O₃ ceramics, which can be utilized for filters and catalyst supports is essential for their functionality and durability. Superior mechanical strength would be obtained by tailoring the densification and grain growth during sintering. This study deals with grain growth behavior of a freeze-casted Al₂O₃ with addition of La₂O₃. In a temperature range between 1400 and 1600℃, variations of average grain size with sintering time and temperature were observed and analyzed with G_tⁿ-G₀ⁿ = kt and with k = k₀exp(-E_a/RT). As a result, n value and activation energy (E_a) for grain growth were calculated as 3 and 489.09 kJ/mol, respectively. These commonly confirms retardation effect of the La addition during sintering of Al₂O₃ porous structure. More accurate analysis on the La effect can be followed to provide useful guidance for the selection of additives for better mechanical strength in Al₂O₃ porous structures.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.939-945
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• 2004

Glasses of $SiO_2-B_{2}O_3-Al_{2}O_3-CaO-La_{2}O_3$ with various amounts of $La_{2}O_3$ were infiltrated into a porous alumina to make an alumina-glass composite. The infiltration characterization and bending strength of the composite were examined in terms of glass composition. $La_{2}O_3$ in the glass decreased the high temperature viscosity and this enhanced the wetting behaviour of this glass to alumina, and made glass infiltration easier. The infiltrated glass dissolved the alumina skeleton, and $Al_{2}O_3$ component in the glass melt reprecipitated on the alumina. The grain growth occurred to a specific crystal direction. The glass containing $20mole\%$ of $La_{2}O_3$ was crystallized after infiltration, and this enhanced the bending strength of the composite.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.505-511
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• 1997

The effects of sintering atmospheres(air, O2, N2) on the sintering and microwave dielectric properties of (1-x)CaTiO3-xLaAlO3 system was investigated. The sintered density of (1-x)CaTiO3-xLaAlO3 under air atmosphere increased linearly with increasing x, but it decreased in the range of x>0.5 under O2 atmosphere and x>0.6 under N2 atmosphere in spite of the increament of the smaller La(1.06$\AA$) and Al(0.5 $\AA$) ion than Ca(0.99$\AA$) and Ti(0.6$\AA$). In case of the air sintering atmosphere of (1-x)CaTiO3-xLaAlO3 the two phases of orthorhombic and rhombohedral crystal system were coexisting, and the XRD peak of rhombohedral crystalsystem was to be higher with increasing x. However, the sintering atmosphere of O2 and N2 made the monophasic crystal system of orthorhombic keep up by x=0.5 and x=0.6, respectively, and it transformed to pseudo-cubic crystal system in x>0.5 and x>0.6. The XRD peak intensity of (1-x)CaTiO3-xLaAlO3 was to be gradually higher with increasing x under the air atmosphere of sintering. Whereas, its XRD peak intensity increased till x=0.6 but decreased with increasing x in the range of x>0.6 under O2 and N2 atmosphere. The relative dielectric constant of (1-x)CaTiO3-xLaAlO3 sintered under air atmosphere decreased linearly and the Q.f0 value increased according as x increased. On the other hand, the relative dielectric constant of (1-x)CaTiO3-xLaAlO3 under O2 and N2 atmosphere decreased in the range of x$\leq$0.5 with increasing x, but increased rapidly in the range of x$\geq$0.6. And the Q.f0 value increased till x=0.6 but decreased in the range of x>0.6 with increasing x. The temperature coefficient of resonant frequency had no relation to sintering atmosphere.

• Progress in Superconductivity
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• v.2 no.2
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• pp.71-75
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• 2001

The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.67-71
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• 2011

La doped CuO-ZnO-$Al_2O_3$ powders are prepared by sol-gel method with aluminum isopropoxide and primary distilled water as precursor and solvent. In this synthesized process, the obtained metal oxides caused the precursor such as copper (II) nitrate hydrate and zinc (II) nitrate hexahydrate were added. To improve the surface areas of La doped CuO-ZnO-$Al_2O_3$ powder, sorbitan (z)-mono-9-octadecenoate (Span 80) was added. The synthesized powder was calcined at various temperatures. The dopant was found to affect the surface area and particle size of the mixed oxide, in conjunction with the calcined temperature. The structural analysis and textual properties of the synthesized powder were measured with an X-ray Diffractometer (XRD), a Field-Emission Scanning Electron Microscope (FE-SEM), Bruner-Emmett-Teller surface analysis (BET), Thermogravimetry-Differential Thermal analysis (TG/DTA), $^{27}Al$ solid state Nuclear Magnetic Resonance (NMR) and transform infrared microspectroscopy (FT-IR). An increase of surface area with Span 80 was observed on La doped CuO-ZnO-$Al_2O_3$ powders from $25m^2$/g to $41m^2$/g.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.122-123
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• 2010

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.101-101
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.618-620
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• 2002

The sintering and dielectric characteristics of $(1-x)Al_2O_3-xLa_2O_3$ ceramics (x=0.2, 0.4, 0.5, 0.6, 0.8, 1.0) were investigated. The sample of x=0.6 composition showed a largest density$(6.5g/cm^3)$ in the all samples and its grain were very uniform. The dielectric constant of the samples linearly increased from 9 to 17 up to x=0.6 with a increasing of x. The temperature coefficient of resonance frequency for the samples showed a positive value at x=0.2 and a negative value at x>0.4.

• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.633-638
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• 2011

Mn substituted La, Sr or Ba-hexaaluminate were prepared by $(NH_4)_2CO_3$ co-precipitate method and calcined at $1,200^{\circ}C$ for 5 h. Catalysts were characterized by X-ray diffraction and $N_2$ physisorption and scanning electron microscope (SEM). Compared to $SrMnAl_{11}O_{19}$ and $BaMnAl_{11}O_{19}$, $LaMnAl_{11}O_{19}$ in which La located at mirror plane showed better crystallinity and high surface area, 13 $m^2/g$. $LaMnAl_{11}O_{19}$ revealed well developed plate-like structure which is characteristic structure of hexaaluminate. The catalytic activity of methane combustion increased in the following order: $LaMnAl_{11}O_{19}$ > $SrMnAl_{11}O_{19}$ > $BaMnAl_{11}O_{19}$ and was dependent on surface area of catalysts. 60 wt% $CeO_2/LaMnAl_{11}O_{19}$ calcined at $700^{\circ}C$ showed enhanced methane activity and methane was oxidized completely at low temperature ($700^{\circ}C$). It was confirmed that addition of ceria seems to be effective for the low and middle temperature combustion of methane. But, after calcination at high temperature of $1,200^{\circ}C$, it lost the promoting effect of ceria due to increase of ceria particle size and it had a limit to applying to the high temperature catalytic combustion.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1123-1132
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• 1994

Bi-Sr-Ca-Cu-O superconductor thin films were prepared on MgO and LaAlO3 substrates by MOCVD technique. The films deposited on MgO and LaAlO3 substrates became superconducting at 64 K and 70 K respectively. The measured critical current density of thin film deposited on LaAlO3 substrate was around 104 A/$\textrm{cm}^2$. After annealing at $700^{\circ}C$ for 3 hours, the critical transition temperature(Tc) of films deposited on LaAlO3 was changed from 70 K to 74 K.