• 제목/요약/키워드: LTPS TFTS

검색결과 57건 처리시간 0.032초

A New Level Shifter using Low Temperature poly-Si TFTs

  • Shim, Hyun-Sook;Kim, Jong-Hun;Cho, Byoung-Chul;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1015-1018
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    • 2004
  • We proposed a new cross-coupled level shifter circuit using low temperature poly-Si(LTPS) TFT. The proposed level shifter can operate on low input voltage in spite of low mobility and widely varying high threshold voltage of LTPS TFT. Also, the proposed level shifter operates at high frequency and reduces power consumption for having fast rising and falling time and shortening period flowing short-circuit currents.

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Pixel Circuit with High Immunity to the Degradation of TFTs and OLED for AMOLED Displays

  • Lin, Chih-Lung;Tu, Chun-Da
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.473-476
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    • 2008
  • A simple voltage compensation pixel circuit for AMOLED is produced using low temperature polycrystalline silicon (LTPS) technology. Its operation is verified by AIM-SPICE. Simulation results show that the pixel circuit has high immunity to variation of LTPS-TFT and reduces the drop in luminance due to the degradation of the OLED.

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Development of Rapid Thermal Processor for Large Glass LTPS Production

  • Kim, Hyoung-June;Shin, Dong-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.533-536
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    • 2006
  • VIATRON TECHNOLOGIES has developed Field-Enhanced Rapid Thermal Processor (FERTP) system that enables LTPS LCD and AMOLED manufacturers to produce poly-Si films at low cost, high throughput, and high yield. The FE-RTP allows the diverse process options including crystallization, thermal oxidation of gate oxides and fast pre-compactions. The process and equipment compatibility with a-Si TFT lines is able to provide a viable solution to produce poly-Si TFTs using a-Si TFT lines.

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A five mask CMOS LTPS process with LDD and only one ion implantation step

  • Schalberger, Patrick;Persidis, Efstathios;Fruehauf, Norbert
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1645-1648
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    • 2006
  • We have developed a CMOS LTPS process, which requires only five photolithographic masks and only one ion doping step. Single TFTs, inverters, ring oscillators and shift registers were fabricated. N- and p-channel devices reached field effect mobilities of $173cm^2/Vs$ and $47cm^2/Vs$, respectively.

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Development of 2 inch LTPS-TFT AMOLED on Flexible Metal Foil

  • Park, Dong-Jin;Moon, Jae-Hyun;Kim, Yong-Hae;Chung, Choong-Heui;Lee, Myung-Hee;Lee, Jin-Ho;Song, Yoon-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1111-1114
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    • 2006
  • We have developed a 2 inch LTPS-TFT AMOLED display with a top emission structure on a $50-{\mu}m-thick$ metal foil. The Active matrix back planes were fabricated with the p-channel LTPS TFT with a conventional pixel circuit consisting of 2 transistors and 1 capacitance. The p-channel TFTs on the metal foil exhibited the field-effect mobility of $22cm^2/Vs$. Finally, a images from prototype monochrome AMOLED displays are successfully presented, with $64{\times}88$ pixels and 56-ppi resolution.

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고 개구율 화소보상회로를 갖는 저전력 LTPS AMOLED 패널 설계 (Design of Low Power LTPS AMOLED Panel and Pixel Compensation Circuit with High Aperture Ratio)

  • 강홍석;우두형
    • 대한전자공학회논문지SD
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    • 제47권10호
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    • pp.34-41
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    • 2010
  • 본 연구를 통해서 대 면적, 저 전력 AMOLED 용용에 적합한 고 개구율 픽셀 보상회로와 이에 대한 구동회로를 제안하였다. 균일도는 다소 떨어지지만 안정성과 이동도가 뛰어난 저온 다결정 실리콘(LTPS) 박막 트랜지스터(TFT)를 기반으로 설계했다. 픽셀의 불량률을 낮추고 배면발광방식에 적합하도록 픽셀 보상회로를 보다 간단하게 개선하여 고 개구율 특성을 갖도록 했다. 제안하는 고 개구율 픽셀 보상회로는 일반적인 구동방식을 사용할 경우 명암비에서 큰 손해를 볼 수가 있으므로, 명암비를 높게 유지하기 위한 구동방식 및 구동회로를 제안하여 검증하였다. 이와 더불어 동영상 특성을 개선하기 위해 black data insertion 방식을 구현할 수 있도록 설계했다. 배면발광방식의 19.6" WXGA AMOLED 패널에 대해 설계했으며, 픽셀의 평균 개구율은 41.9%로 기존에 비해 8.9% 증가했다. TFT의 $V_{TH}$ 편차가 ${\pm}0.2\;V$일 때, 패널의 불균일도와 명암비는 각각 6% 이하와 10만:1 이상으로 예측되었다.

6 Mask LTPS CMOS Technology for AMLCD Application

  • Park, Soo-Jeong;Lee, Seok-Woo;Baek, Myoung-Kee;Yoo, Yong-Su;Kim, Chang-Yeon;Kim, Chang-Dong;Kang, In-Byeong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1071-1074
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    • 2007
  • 6Mask CMOS process in low temperature polycrystalline silicon thin film transistors (poly-Si TFTs) has been developed and verified by manufacturing a 6Mask CMOS AMLCD panel. The novel 6Mask CMOS process is realized by eliminating the storage mask, gate mask and via open mask of conventional structure.

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High Efficiency and Small Area DC-DC Converter for Gate Driver using LTPS TFTs

  • Kim, Kyung-Rok;Kim, Hyun-Wook;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1085-1088
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    • 2007
  • A new DC-DC converter was designed for gate driver circuit using low temperature poly-Si TFT technology. To achieve high efficiency and small area, we proposed a cross-coupled type DC-DC converter which converts 5V of input voltage to 9V of output voltage and supplies 120$\mu$A of current to load. Its efficiency is 92.9% and the area is reduced as much as 19% compared to the previously reported latch type DC-DC converter.

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A Low-Power and High-Accuracy Driving Method for LTPS TFT-LCD in Mobile Applications

  • Kim, Han-Jun;Jung, Jae-Yoon;Choi, Jung-Hwan;Lee, In-Hwan;Kwon, Oh-Kyong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.409-412
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    • 2006
  • A high data accuracy and low power consumption driving method and output stage of the source driver are proposed for the LTPS TFT-LCD in mobile applications. The proposed driving method is insensitive to the variations of the electrical characteristics of TFTs, which enables the output errors of the source driver are under 1/2 LSB in all gray levels. In addition, the power consumption of the driver with the method is decreased to 9.9mW which is 55.9% of that of the conventional source driver by reducing unnecessary charge waste.

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