• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.11
• /
• pp.21-27
• /
• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

• Journal of Navigation and Port Research
• /
• v.28 no.3
• /
• pp.213-219
• /
• 2004

In this paper, a LNA(Low Noise Amplifier) has been developed, which is operating at L-band i.e., 1452∼1492 MHz for satellite DAB(Digital Audio Brcadcasting) receiver. The LNA is designed to improve input and output reflection coefficient and VSWR(Voltage Standing Wave Ratio) by balanced amplifier. The LNA consists of low noise amplification stage and gain amplification stage, which make a using of GaAs FET ATF-10136 and VNA-25 respectively, and is fabricated by hybrid method. To supply most suitable voltage and current, active bias circuit is designed Active biasing offers the advantage that variations in $V_P$ and $I_{DSS}$ will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets $V_{gs}$ for the desired drain voltage and drain current. The LNA is fabricated on FR-4 substrate with RF circuit and bias circuit, and integrated in aluminum housing. As a reults, the characteristics of the LNA implemented more than 32 dB in gain. 0.2 dB in gain flatness. lower than 0.95 dB in noise figure, 1.28 and 1.43 each input and output VSWR, and -13 dBm in $P_{1dB}$.

• Proceedings of the IEEK Conference
• /
• 2003.07a
• /
• pp.354-357
• /
• 2003

The low noise and balanced amlifier has been designed by using PBG. Usually balanced LNAis used to matching the input and output mismatching that caused by matching the low noise matching point. And the PBG supresses the harmoincs. This paper proposed balanced LNA by using PBG. And this configuration improve the performance - noise figure, VSWR.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.35-39
• /
• 2000

Large-area high-temperature superconducting (HTS) films, filter design and damage-free processing technique have been developed to fabricate low insertion loss and sharp skirt filters. Further, long life cryocooler, low temperature low noise amplifier (LNA) and cryocable have been developed to assemble HTS filter subsystem for IS-95 and IMT-2000 mobile telecommunication. The surface resistance of the films was about 0.2 milli-ohm at 70 K, 12 GHz. An 11-pole HTS filter for IS-95 telecommunication system and a 16-pole HTS filter for IMT-2000 telecommunication system were designed and fabricated using 60 {\times}$ 50 mm$^2$ and one half of 3-inch diameter YBCO films on a 0.5-mm-thick MgO substrate, respectively. We have assembled the filter and low temperature LNA in a dewar with the cryocooler. Ultra low-noise (noise figure: 0.5 dB at 70 K) and ultra sharp-skirt (40 dB/1.5 MHz) performance was presented by the IS-95 filter subsystem and the IMT-2000 filter subsystem, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.40 no.1
• /
• pp.1-8
• /
• 2015

In this paper, a double-input single-output architecture of a LNA(Low Noise Amplifier) is presented to enable to be devised for light weight and small-sized OTM(On-The-Move) satellite communication system suitable to be mounted on vehicles. In spite of advantages of the double-input single-output architecture of a LNA such as reduction of the number of physical channels, it results in time-varying phase error between a fundamental mode path and a high-order mode path. This paper shows that the error can be corrected by adding pilot signals to the LNA and using signal processing, and also gives the measurement data to use the method mentioned above.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.48 no.11
• /
• pp.89-94
• /
• 2011

In this paper, we developed the W-band MMIC low noise amplifier for the millimeter-wave seeker using the tuner system. The MHEMT devices for MMIC LNA exhibited DC characteristics with a drain current density of 692mA/mm, an extrinsic transconductance of 726mS/mm. The current gain cutoff frequency(fT) and maximum oscillation frequency($f_{max}$) were 195GHz and 305GHz, respectively. The fabricated W-band low noise amplifier represented S21 gain of 7.42dB at 94 GHz and noise figure of 2.8dB at 94.2 GHz.

• Proceedings of the IEEK Conference
• /
• 2002.06a
• /
• pp.435-438
• /
• 2002

A design of Ku-band(11.7~12.20Hz) monolithic microwave integrated circuit(MMIC) low noise block(LNB) downconverter using self oscillating mixer (SOM) for direct broadcast satellite(DBS) application is presented The proposed LNB downconverter is composed of low noise amplifier(LNA), image reject filter(IRF), SOM , low pass filter(LPF). The conversion gain is 30dB , VSn is less than 1.7: 1 and overall noise figure is less than 1.2dB.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.539-540
• /
• 2008

This paper presents an ultra-wideband (UWB) CMOS low noise amplifier (LNA) topology that operates in 3.1-10.6GHz band. The common gate structure provides wideband input matching and flattens the passband gain. The proposed UWB amplifier is implemented in 0.18 um CMOS technology for lower band operation mode. Simulation shows a minimum NF of 2.35 dB, a power gain of $18.3{\sim}20\;dB$, better than -10 dB of input and output matching, while consuming 16.4 mW.

• Proceedings of the IEEK Conference
• /
• 2003.07a
• /
• pp.621-624
• /
• 2003

In this paper, two Cascode Low Noise Variable Gain Amplifiers are proposed for wide dynamic range and constant Noise Figure for frequency range of 2.4GHz. Designed Variable Gain Low Noise Amplifier are for Wireless Local Area Network (WLAN) applications. A gain is higher than 17dB and the noise figure is approximately 1.3dB and the input VSWR is better than 2:1.

• ETRI Journal
• /
• v.27 no.5
• /
• pp.628-634
• /
• 2005

From AC analysis results utilizing a 2-dimensional device simulator, we extracted an AC-equivalent circuit of a grounded-gate NMOS (ggNMOS) electrostatic discharge (ESD) protection device. The extracted equivalent circuit is utilized to analyze the effects of the parasitics in a ggNMOS protection device on the characteristics of a low noise amplifier (LNA). We have shown that the effects of the parasitics can appear exaggerated for an impedance matching aspect and that the noise contribution of the parasitic resistances cannot be counted if the ggNMOS protection device is modeled by a single capacitor, as in prior publications. We have confirmed that the major changes in the characteristics of an LNA when connecting an NMOS protection device at the input are reduction of the power gain and degradation of the noise performance. We have also shown that the performance degradation worsens as the substrate resistance is reduced, which could not be detected if a single capacitor model is used.