• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2295-2297
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• 2003

The major problem encountered in satellite design is EMI (Electro-Magnetic Interference) and EMC (Electro-Magnetic Compatibility). Here, our focus is on the effects of protons on the electronic system. The SEU (Single Event Upset) results from the level change of stored information due to photon radiation and temperature in the space and the nuclear power plant environment. The impact of SEU on PLD (Programmable Logic Devices) technology is most apparent in ROM/SRAM/DRAM devices wherein the state of storage cell can be upset. In this paper, a simple and powerful test techniques is suggested, and the results are presented for the analysis and future reference. The test results are compared with that of JPL test report. In our experiment, the proton radiation facility available at KIRAMS (Korea Institute of Radiological Medical Sciences) has been applied on a commercially available SRAM manufactured by Hynix Semiconductor Company.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2486-2491
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• 2003

This paper presents a method to segment object ID marks on poor quality images under uncontrolled lighting conditions of FA inspection process. The method is based on multiple templates and normalized gray-level correlation (NGC) method. We propose a multiple template method, called as ATM (Active Template Model) which uses combinational relation of multiple templates from model templates to match and segment several characters of the inspection images. Conventional Snakes algorithm provides a good methodology to model the functional of ATM. To increase the computation speed to segment the ID mark regions, we introduce the Dynamic Programming based algorithm. Experimental results using images from real FA environment are presented.

• Journal of IKEEE
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• v.15 no.2
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• International Journal of Aeronautical and Space Sciences
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• v.11 no.3
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• pp.201-205
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• 2010

DC/DC Switching power converters are commonly used to generate regulated DC output voltages with high-power efficiencies from different DC input sources. A switching converter utilizes one or more energy storage elements such as capacitors, or transformers to efficiently transfer energy from the input to the output at periodic intervals. The fundamental boost converter studied here consists of a power metal-oxide semiconductor field effect transistor switch, an inductor, a capacitor, a diode, and a pulse-width modulation circuit with oscillator, amplifier, and comparator. A buck converter containing a switched-mode power supply is also studied. In this paper, the electrical characteristics of DC/DC power converters are simulated by simulation program with integrated circuit emphasis (SPICE). Furthermore, power efficiency was analyzed based on the specifications of each component.

• International Journal of Aeronautical and Space Sciences
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• v.11 no.3
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• pp.240-245
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• 2010

The controller of a model reference adaptive control monitors the plant's inputs and outputs to acknowledge its characteristics. It then adapts itself to the characteristics it encounters instead of behaving in a fixed manner. An important part of every adaptive scheme is the adaptive law for estimating the unknown parameters on line. A more precise model is required to improve performance and to stabilize a given dynamic system, such as a satellite in which performance varies over time and the coefficients change due to disturbances, etc. After model identification, the robust controller ($H{\infty}$) is designed to stabilize the rigid body and flexible body of a satellite, which can be perturbed due to disturbance. The result obtained by the $H{\infty}$ controller is compared with that of the proportional and integration controller which is commonly used for stabilizing a satellite.

• International Journal of Concrete Structures and Materials
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• v.10 no.2
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• pp.249-256
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• 2016

This paper deals with the effects of silica fume content and polymer-binder ratio on the properties of ultrarapid-hardening polymer-modified mortar using silica fume and ethylene-vinyl acetate redispersible polymer powder instead of styrene-butadiene rubber latex to shorten the hardening time. The ultrarapid-hardening polymer-modified mortar was prepared with various silica fume contents and polymer-binder ratios, and tested flexural strength, compressive strength, water absorption, carbonation depth and chloride ion penetration depth. As results, the flexural, compressive and adhesion strengths of the ultrarapid-hardening polymer-modified mortar tended to increase as increasing polymer-binder ratio, and reached the maximums at 4 % of silica fume content. The water absorption, carbonation and chloride ion penetration resistance were improved according to silica fume content and polymer-binder ratio.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.165-168
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• 2008

The experimental results of exposing IGBT (Insulated Gate Bipolar Transistor) samples to gamma radiation source show shifting of threshold voltages in the MOSFET and degradation of carrier mobility and current gains. At low total dose rate, the shift of threshold voltage is the major contribution of current increases, but for more than some total dose, the current is increased because of the current gain degradation occurred in the vertical PNP at the output of the IGBTs. In the paper, the collector current characteristics as a function of gate emitter voltage (VGE) curves are tested and analyzed with the model considering the radiation damage on the devices for gate bias and different dose. In addition, the model parameters between simulations and experiments are found and studied.

• Proceedings of the PSK Conference
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• 2003.04a
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• pp.290.3-291
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• 2003

To increase detection sensitivity for multi-DDT residues (o,p-/p,p-DDT, o,p-/p,p-DDE, o,o-/o,p-DDD) analysis, a highly selective sample clean-up method was introduced prior to GC/MS analysis using immunoaffinity column. The immunoaffinity matrix was prepared by coupling IgG fraction of DDT antiserum to cyanogens bromide activated Sepharose 4B. Three DDT antisera (DDA-1, DDHP-2, DDCP-3) were test for affinity column ligand that obtained by imunizing respective DDT immunogen to rabbits, and IgG was purified using protein A affinity purification. (omitted)

• ETRI Journal
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• v.34 no.1
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• pp.134-137
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• 2012

Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. To overcome the tradeoff relationship, a super-junction (SJ) trench MOSFET (TMOSFET) structure is studied and designed in this letter. The processing conditions are proposed, and studies on the unit cell are performed for optimal design. The structure modeling and the characteristic analyses for doping density, potential distribution, electric field, width, and depth of trench in an SJ TMOSFET are performed and simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the specific on-state resistance of 1.2 $m{\Omega}-cm^2$ at the class of 100 V and 100 A is successfully optimized in the SJ TMOSFET, which has the better performance than TDMOS in design parameters.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.2393-2396
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• 2005

We present a method to detect on-road vehicle using geometric invariant of feature points on side planes of the vehicle. The vehicles are assumed into a set of planes and the invariant from motion information of features on the plane segments the plane from the theory that a geometric invariant value defined by five points on a plane is preserved under a projective transform. Harris corners as a salient image point are used to give motion information with the normalized correlation centered at these points. We define a probabilistic criterion to test the similarity of invariant values between sequential frames. Experimental results using images of real road scenes are presented.