• Korean Journal of Materials Research
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• v.20 no.10
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• pp.501-507
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• 2010

Changes in surface morphology and roughness of dc sputtered ZnO:Al/Ag back reflectors by varying the deposition temperature and their influence on the performance of flexible silicon thin film solar cells were systematically investigated. By increasing the deposition temperature from $25^{\circ}C$ to $500^{\circ}C$, the grain size of Ag thin films increased from 100 nm to 1000 nm and the grain size distribution became irregular, which resulted in an increment of surface roughness from 6.6 nm to 46.6 nm. Even after the 100 nm thick ZnO:Al film deposition, the surface morphology and roughness of the ZnO:Al/Ag double structured back reflectors were the same as those of the Ag layers, meaning that the ZnO:Al films were deposited conformally on the Ag films without unnecessary changes in the surfacefeatures. The diffused reflectance of the back reflectors improved significantly with the increasing grain size and surface roughness of the Ag films, and in particular, an enhanced diffused reflectance in the long wavelength over 800 nm was observed in the Ag back reflectors deposited at $500^{\circ}C$, which had an irregular grain size distribution of 200-1000 nm and large surface roughness. The improved light scattering properties on the rough ZnO:Al/Ag back reflector surfaces led to an increase of light trapping in the solar cells, and this resulted in a noticeable improvement in the $J_{sc}$ values from 9.94 mA/$cm^2$ for the flat Ag back reflector at $25^{\circ}C$ to 13.36 mA/$cm^2$ for the rough one at $500^{\circ}C$. A conversion efficiency of 7.60% ($V_{oc}$ = 0.93, $J_{sc}$ = 13.36 mA/$cm^2$, FF = 61%) was achieved in the flexible silicon thin film solar cells at this moment.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.35-40
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• 2013

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

• Korean Chemical Engineering Research
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• v.44 no.6
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• pp.609-613
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• 2006

Ba2-xSrxSiO4:Eu2+ phosphor particles with the high photoluminescence (PL) intensity under long wavelength ultraviolet (UV) were prepared by spray pyrolysis. The photoluminescence, morphological and crystalline characteristics of $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles prepared by spray pyrolysis were investigated. $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles prepared by spray pyrolysis had various colors from bluish green to yellow by changing the ratio of barium and strontium of the host material. In case of x=0, the main emission peak of $Ba_2SiO_4:Eu^{2+}$ phosphor was 500 nm. In case of x=2, the main emission peak of $Sr_2SiO_4:Eu^{2+}$ phosphor was 554nm. $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles obtained by spray pyrolysis had spherical shape and hollow structure. On the other hand, the post-treated $Ba_{2-x.}Sr_{x.}SiO_4:Eu^{2+}$ phosphor particles had large size and irregular shape. The $Ba_{1.488}Sr_{0.5}SiO_4:Eu_{0.012}{^{2+}}$ phosphor particles had the maximum PL intensity after post-treatment at temperature of $1300^{\circ}C$ for 3h under reduction atmosphere.

• Geophysics and Geophysical Exploration
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• v.23 no.1
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• pp.1-12
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• 2020

In the development of geodynamic structures such as subduction and rift zones, a weakening mechanism is essential for localized weak zone formation in the lithosphere. Shear heating, a weakening mechanism, generates short-wavelength temperature elevation in the lithosphere; the increased temperature can reduce lithospheric strength and promote its breakup. A two-dimensional elastoplastic extensional basin model was used to conduct benchmarking based on previous numerical simulation studies to quantitatively analyze shear heating. The amount of shear heating was investigated by controlling the yield strength, extensional velocity, and strain- and temperature-dependent weakening. In the absence of the weakening mechanism, the higher yield strength and extensional velocity led to more vigorous shear heating. The reference model with a 100-MPa yield strength and 2-cm/year extension showed a temperature increase of ~ 50 K when the bulk extension was 20 km (i.e., 0.025 strain). However, in the yield-strength weakening mechanism, depending on the plastic strain and temperature, more efficient weakening induced stronger shear heating, which indicates positive feedback between the weakening mechanism and the shear heating. The rate of shear heating rapidly increased at the initial stage of deformation, and the rate decreased by 80% as the lithosphere weakened. This suggests that shear heating with the weakening mechanism can significantly influence the strength of relatively undamaged lithosphere.

• Journal of Animal Science and Technology
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• v.49 no.5
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• pp.677-688
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• 2007

돼지를 포함한 대부분의 동물은 일정한 발정주기를 가지고 일정한 시기에 배란을 하는 자연배란동물이지만, 토끼, 고양이, 밍크 등의 암놈은 교미자극에 의해 배란이 일어나는 유기배란동물이다. 또한 1년에 한 번만 발정하는 단발정동물과 1년에 수차례 발정하는 다발정동물이 있다. 이 중에서 모돈은 1년에 수차례 발정하는 다발정 동물로서 발정기에 들면 비발정기와는 다른 행동을 나타낸다(Diehl 등, 2001). 양돈가의 수익을 최대화하기 위해서는 비생산일수를 최소로 줄여야 한다. 모돈의 비생산일수를 줄일 수 있는 한 가지 방법은 성공적으로 교배를 시키는 것이다. 이처럼 성공적으로 교배를 시키기 위해서는 수정적기를 정확히 예측해야 한다. 만약 수정적기를 정확히 판단하지 못하여 수태가 되지 않으면, 비생산일수가 늘어나 손실을 입게 된다. 따라서 수정적기를 정확히 판단하는 것은 모돈의 성공적인 인공수정에 있어서 중요한 요소이다. 수정적기는 배란이 일어나기 전 10시간에서 12시간 사이이며, 발정이 시작되는 시점을 기준으로 하였을 때 경산돈의 경우 26시간에서 34시간 사이이고 미경산돈의 경우는 18시간에서 26시간 사이이다(Evans 등, 2001). 현재 하루에 두 번 모돈의 발정을 확인하는 것이 일반화되어 있으며, 이 때 웅돈을 접촉시키거나 육안관찰을 통하여 발정 유무를 판단한다. 이러한 방법에는 숙련된 기술과 풍부한 경험이 요구될 뿐만 아니라 총 소요노동력의 30% 정도가 요구된다(Perez 등, 1986). 하루에 두 번밖에 발정을 감지하지 않기 때문에 발정이 언제 시작되었는지를 정확히 알 수 없으며, 또한 발정의 대부분이 새벽에 시작되므로 수정적기를 정확히 판단하기란 매우 어렵다. 만약 발정을 감지했더라도 적기에 인공수정을 하지 못한다면, 수태율이 낮아지므로 경제적 손실이 초래된다. 현재 이러한 문제점 때문에 2회에서 3회에 걸쳐 인공수정을 하고 있으나 이에 따른 소요비용과 소요노동력 등은 양돈가의 부담을 가중시키는 요인이 되고 있다. 돼지는 발정기가 되면 비발정기에 나타내지 않던 외음부의 냄새를 맡는 행동, 귀를 세우는 행동 및 승가허용 행동 등을 나타낸다(Diehl 등, 2001). 또한 돼지는 비발정기에 비하여 발정기에 더 많은 활동량을 나타낸다(Altman, 1941; Erez and Hartsock, 1990). Freson 등(1998)은 스톨에서 개별적으로 사육되고 있는 모돈의 활동량을 적외선센서를 이용하여 측정함으로써 발정을 86%까지 감지하였다고 보고하였다. 그러나 이 연구는 단지 모돈의 발정을 감지하였을 뿐 번식관리에 있어서 가장 중요한 수정적기의 판단 기준을 제시하지 못하였다. 따라서, 본 연구는 스톨에서 사육되는 모돈의 활동량을 측정함으로써 발정시작시각을 감지하고 이를 기준으로 인공수정적기를 예측할 수 있는 인공수정적기 예측 장치를 개발한 후 이의 성능을 농장실증실험을 통하여 시험하고자 수행되었다.