• Journal of Korean Vacuum Science & Technology
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• v.4 no.2
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• pp.47-49
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• 2000

We report on the fabrication and characterization of InGaN/GaN multiple quantum well light emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 m on p-GaN was measured to be 85% at 450nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 m and 23 m, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.3
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• pp.78-80
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• 2000

We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.211-217
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• 2015

To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

• Korean Journal of Optics and Photonics
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• v.25 no.1
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• pp.38-43
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• 2014

An external cavity laser supporting two wavelengths is demonstrated by incorporating polymer waveguide Bragg reflectors and a superluminescent light-emitting diode. An oversized rib waveguide structure and Bragg gratings are designed by using the effective-index and transmission-matrix methods. Bragg gratings with different periods are inscribed on a polymer waveguide through double-exposure laser interferometry. In order to tune the cavity loss affected by the reflectivity of Bragg gratings, a Bragg reflectors with varying length is incorporated. Two-wavelength-mode lasing is achieved for the device consisting of 2-mm long, 537-nm period gratings and 2.2-mm long, 540-nm period gratings; the lasing wavelengths are 1554 nm and 1564 nm, with an output power close to 0 dBm, a 20-dB bandwidth of 0.2 nm, and a side-mode suppression ratio of 45 dB.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.555-559
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• 2002

Blue-emitting $Sr_{10}$($PO$)$_{6}$ $Cl_2$:$Eu^{2+}$ and $_{(Sr,Mg) }$ 10/($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ phosphor particles for application of long-wavelength UV LED were prepared by ultrasonic spray pyrolysis. The luminescence characteristics under long- wave-length ultraviolet of the $Sr_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ and (Sr,Mg)$_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$^Eu{2+}$ phosphor particles prepared by the spray pyrolysis were compared with that of the commercial product. The PL intensity of the $Sr_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ particles prepared by the spray pyrolysis was lower than that of the commercial $Sr_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ particles because prepared $Sr_{10}$ ($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ phosphor particles had porous structure and hollow morphology. However, the PL intensity of the (Sr,Mg)$_{10}$($PO_4$)$_{6}$ $Cl_2$:$Eu^{2+}$ phosphor particles prepared by the spray pyrolysis was 8% higher than that of the commercial one. The high brightness of $(Sr,Mg)_{10}$ ($PO_4$)$_{6}$ $Cl_2$:Eu$^{2+}$ phosphor particles prepared by spray pyrolysis is due to the dense structure and high crystallinity of particles. The TEX>$(Sr,Mg)<_{10}$ ($PO_4$)$_{6}$ /$Cl_2$:$Eu^{ 2+}$ phosphor particles had main emission peak t 448 nm under long- wavelength ultraviolet.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.529-534
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• 2004

$Sr_{4}Al_{14}O_{25}$ was synthesized by solid state reaction with flux. $H_{3}BO_3$ was used to synthesize $SrO-Al_{2}O_{3}$ phosphor system as a flux. The effect of doping system such as Eu+Dy, Eu, and Ce on the luminescent properties of $Sr_{4}Al_{14}O_{25}$ was investigated. Both PL spectra of $Sr_{4}Al_{14}O_{25}$:Eu and $Sr_{4}Al_{14}O_{25}$:Eu+Dy excited at 390 nm showed greenish-blue emission at about 490 nm, while the emission wavelength was shifted to 400 nm by doping Ce. The reduction of $Eu^{3+}$ ions to $Eu^{2+}$ could be accomplished by the annealing process under $N_{2}^{+}$ vacuum atmosphere, and attributed to the emission at 490 nm. It is verified that $Sr_{4}Al_{14}O_{25}$:Eu phosphor is suitable for white LEDs became of a broad absorption band peaking at 390 nm.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.10
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• pp.2461-2465
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• 2013

This paper investigates the influence of hydrogen loading process on the radiation sensitivity of fiber Bragg gratings (FBG). We made the FBG inscribed in the same commercial Ge-doped fiber with different hydrogen loading periods. We measured the Bragg wavelength shift (BWS) of the FBG exposed to gamma-radiation up to a dose of 18 kGy, and evaluated the change of full width at half maximum (FWHM) and the FBG temperature sensitivity coefficient after irradiation. Varying hydrogen loading parameter led to BWS differences up to nearly a factor of two.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.359-359
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• 2012

Trivalent rare-earth ($RE^{3+}=Eu^{3+}\;and\;Tb^{3+}$) ions activated $CaGd_4O_7$ phosphors were synthesized by a sol-gel process. After annealing at $1,500^{\circ}C$, the XRD patterns of the phosphor confirmed their monoclinic structure. The photoluminescence excitation spectra of $Eu^{3+}$ and $Tb^{3+}$ doped $CaGd_4O_7$ phosphor shows the broad-band excitations in the shorter wavelength region due to charge transfer band of completely filled $O^{2-}$ to the partially filled $Eu^{3+}$ ions and f-d transitions of $Tb^{3+}$ ions, respectively. The photoluminescence spectra show that the reddish-orange ions and green emission for $Eu^{3+}$ and $Tb^{3+}$ ions, respectively. Owing to the importance of thermal quenching property in the technological parameters, the temperature-dependent luminescence properties of these phosphors were measured for examing the suitability of their applications in the development of light emitting diodes (LEDs). In addition to those measurements, the cathodoluminescence properties were examined by changing the acceleration voltage and filament current. The calculated chromaticity coordinates of these phosphors were close proximity to those of commercially available phosphors for LED and field emission display devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.