• Korean Journal of Clinical Laboratory Science
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• v.47 no.4
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• pp.273-278
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• 2015

The purpose of this study was to evaluate the in-vitro efficacy of PDT using red light emitting diode (LED) with Radachlorin for biofilm inhibition of clinical Candida albicans isolates. The suspensions containing C. albicans at $9{\times}10^8CFU/mL$ were prepared on yeast nitrogen base containing 5% glucose. The biofilm formation was grown for 3 h after seeding suspensions each 100 ul on a 96-well plate and then supernatant was discarded. Each well was treated with $0.39{\mu}g/mL$ from $50{\mu}g/mL$ concentrations of Radachlorin on adherent biofilm. After a 30-minute incubation, light was irradiated for 30, 60, or 90 minutes using the following light source of wavelength 630 nm LED, at energy densities of 14, 29, and $43J/cm^2$. Afterwards, all supernatant was removed and dried. Adherent cells were stained with safranin O and dried. The cell viability was measured using a microplate reader at 490 nm. Also, a fluorescent signal on C. albicans was observed by saturation of a photosensitizer. In conclusion, a significant inhibition of 72.5% was observed to C. albicans on biofilm at the Radachlorin dose of $50{\mu}g/mL$ with 630 nm LED. The Photosensitizer (Radachlorin) was adequate at 30 minuttes for C. albicans. Overall, the results showed that inhibition of biofilm formation was Radachlorine dose-dependent. The results suggest that PDT, using Radachlorin with 630 nm LED, is able to decrease biofilm formation of C. albicans.

• Journal of Plant Biotechnology
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• v.42 no.2
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• pp.104-110
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• 2015

We analyzed the effects of various LED light treatments (red 655 nm, blue 456 nm, white and mixed light) on growth pattern, gene expression and flavonoid contents in lettuce leaf. Plants treated with mixed light (red+blue+white) showed better growth performance than those treated with single LED and fluorescent lamp (FL). Expression analysis of the eight genes involved in flavonoid biosynthesis in plants treated with LED light was examined. Results showed that red lettuce grown under mixed light showed high expression levels of LsC4H, LsF3H and LsDRF genes. Morever, the same treatment plants possessed higher content of gallic acid, chlorogenic acid and quercetin contents than those in plants exposed to single light. However, the highest total anthocyanin content was identified in plants treated with red+blue light and the lowest content was identified in plants exposed to white fluorescent lamp and single LED light condition. Thus, this study indicates that the ratio of blue to red LEDs is important for the morphology, growth, and phenolic compounds with anthocyanin properties in the two lettuce cultivars tested.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.27-33
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• 2001

The performance of the ordinary Fiber Bragg Grating(FBG) sensor strain measurement system, which uses Fabry-Perot filter for scanning wavelength, has limitation for application because of hysteresis characteristics of PZT element in the filter, slow scan rate of the filter and the high cost of system. We proposed and experimented a multiple FBG sensor system using light emitting diode(LED) as a light source and adapting Code Division Multiplexing(CDM) method to separating out individual sensor signal. Output signals for a applied static and dynamic strain and crosstalk levels between sensor signals were measured. The price of the system is very loss and the response speed is very fast. Crosstalk levels between sensor signals below - 30 dB were demonstrated.

• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.304-308
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• 2010

Deposition temperature uniformity of GaN based MQW (multiple quantum well) layers is an important key which affects the wavelength uniformity of white LEDs. Temperature uniformity was assessed by infrared images for both cases of a static and a rotating susceptor. Rotating the susceptor at 2.5 rpm over the induction heater gave 4.3% of temperature non-uniformity. Temperature distribution of the graphite susceptor over the induction heater was numerically modelled and agreed with experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.349-350
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• 2006

In this module, RED Light Emitting Diode was employed to replace for Low level He-Ne laser for medical applications Each experiment was performed to irradiation group and non-irradiation group for both Dog bone marrow and Rat tissue cells. MTT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590nm transmittance of ELISA reader. As a result, the cell increase of 37% on Dog bone marrow, 23% on Rat tissue cells was verified m irradiation group as compared to non-irradiation group. The fact that specific wavelength irradiation has an effect on cell vitality and proliferation is known through this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.63-66
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• 2003

To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Journal of the Korean Graphic Arts Communication Society
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• v.26 no.2
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• pp.55-64
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• 2008

We designed a UV-LED exposure system which has 365nm dominant wavelength due to the environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed without mask by beam projector with UV-LED light source. Then it was developed by air spray with $1.7\;kgf/cm^2$ of injection pressure. The pencil hardness and solvent resistance of curing photoresist film were excellent as those of conventional photoresist film and the maximum resolution of line image formed by maskless screen plate making. was $100{\mu}m$, so we could establish the possibility of environment-friendly maskless screen plate making technology. But the sharpness of the patterns were ${\pm}40{\mu}m$ since the exposure system for maskless plate making has weak light intensity and the diffusion of light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.481-485
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• 2003

To diffuse Zn at solid-state, the $SiO_2/ZnO/SiO_2$ wafers was made by PECVD and RF Spotter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about $500{\AA}$ and about $3500{\AA}$. First test was Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr and 2nd test was Diffusion temperatures were $760^{\circ}C$, $720^{\circ}C$, and $680^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.510-513
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• 2003

Our Zn diffusion into n-type $GaAs_{0.40}P_{0.60}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.