• 제목/요약/키워드: LED junction temperature

검색결과 63건 처리시간 0.032초

Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays

  • Ban, Zhang;Liang, Zhongzhu;Liang, Jingqiu;Wang, Weibiao;JinguangLv, JinguangLv;Qin, Yuxin
    • Current Optics and Photonics
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    • 제1권2호
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    • pp.143-149
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    • 2017
  • LED arrays with pixel numbers of $3{\times}3$, $4{\times}4$, and $5{\times}5$ have been studied in this paper in order to enhance the optical output power and decrease heat dissipation of an AlGaInP-based light emitting diode display device (pixel size of $280{\times}280{\mu}m$) fabricated by micro-opto-electro-mechanical systems. Simulation results showed that the thermal resistances of the $3{\times}3$, $4{\times}4$, $5{\times}5$ arrays were $52^{\circ}C/W$, $69.7^{\circ}C/W$, and $84.3^{\circ}C/W$. The junction temperature was calculated by the peak wavelength shift method, which showed that the maximum value appears at the center pixel due to thermal crosstalk from neighboring pixels. The central temperature would be minimized with $40{\mu}m$ pixel pitch and $150{\mu}m$ substrate thickness as calculated by thermal modeling using finite element analysis. The modeling can be used to optimize parameters of highly integrated AlGaInP-based LED arrays fabricated by micro-opto-electro-mechanical systems technology.

광학적 열적 최적화를 통한 6인치 다운라이트 설계 (The Design of 6 inch Down-light by Optimization of the Optical and the Thermal Properties)

  • 김성현;정영기;서범식;양종경;박대희
    • 전기학회논문지
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    • 제60권6호
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    • pp.1178-1182
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    • 2011
  • The best methods for distribution controled of LED lighting fixtures is control to designed LED chip array, lens and reflector. However, lens design need distribution design to reflector for low-wattage LED lighting because of difficulty of production and reduction of light efficiency. In addition, it needs maximize of thermal performance to improve the efficiency and reliability of device. As a result, for the height of reflector 40[mm] and Inclination 25[$^{\circ}$], we can see the best distribution properties, and, in the thermal properties, junction temperature MCPCB 62.9 [$^{\circ}C$], FR4 PCB 89.6 [$^{\circ}C$], FR4 PCB from Via-hole is 63.1 [$^{\circ}C$]. it may improve for thermal properties for makes the Via-hole.

고출력 LED의 구조함수분석과 열 거동현상 분석 (The Analysis of Thermal Movement and Structural Function in High-power LED)

  • 이승민;양종경;이종찬;박대희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1613_1614
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    • 2009
  • In this paper, thermal movement of high power LED on the MCPCB is analyzed with structural function and CFdesign V10 program. thermal resistance is decreased as 10.1 [$^{\circ}C$/W] in MCPCB from 12.2 [$^{\circ}C$/W] in LED package. Junction temperature which is calculated with thermal computational analysis program shows 85.113 [$^{\circ}C$] and almost same to measured data.

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열전도성 플라스틱을 적용한 자동차 LED 전조등 방열구조 연구 (Design and Fabrication of Heat Sink for Vehicle LED Headlamp Using Thermally-Conductive Plastics)

  • 김형진;이동규;박현정;양회석;나필선;곽준섭
    • 한국전기전자재료학회논문지
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    • 제28권8호
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    • pp.544-549
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    • 2015
  • Since LEDs (light emitting diodes) have many advantages as a light source in vehicle headlamp, such as good reliability, energy and space saving, and flexible headlamp design. On the other hand, the dependence of its performance and life on temperature have great influence on its practical use. In this study, design and fabrication of heat sink for vehicle LED headlamp were performed using thermally-conductive plastics. This study focused on the effective heat sink structure with limited space in the vehicle LED headlamp. We designed two different prototype of heat sink by thermal simulation using SolidWorks program, which had excellent temperature characteristics. The two different prototype of heat sink were fabricated by injection molding with thermally-conductive plastics. The results showed that LED $T_j$ (junction temperature) of sample B (model 1) and sample C (model 1, 2) was below then $165^{\circ}C$ when applying the thermally-conductive plastics in heat sink of vehicle LED headlamp.

CHAINED COMPUTATIONS USING AN UNSTEADY 3D APPROACH FOR THE DETERMINATION OF THERMAL FATIGUE IN A T-JUNCTION OF A PWR NUCLEAR PLANT

  • Pasutto, Thomas;PENiguel, Christophe;Sakiz, Marc
    • Nuclear Engineering and Technology
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    • 제38권2호
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    • pp.147-154
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    • 2006
  • Thermal fatigue of the coolant circuits of PWR plants is a major issue for nuclear safety. The problem is especially accute in mixing zones, like T-junctions, where large differences in water temperature between the two inlets and high levels of turbulence can lead to large temperature fluctuations at the wall. Until recently, studies on the matter had been tackled at EDF using steady methods: the fluid flow was solved with a CFD code using an averaged turbulence model, which led to the knowledge of the mean temperature and temperature variance at each point of the wall. But, being based on averaged quantities, this method could not reproduce the unsteady and 3D effects of the problem, like phase lag in temperature oscillations between two points, which can generate important stresses. Benefiting from advances in computer power and turbulence modelling, a new methodology is now applied, that allows to take these effects into account. The CFD tool Code_Saturne, developped at EDF, is used to solve the fluid flow using an unsteady L.E.S. approach. It is coupled with the thermal code Syrthes, which propagates the temperature fluctuations into the wall thickness. The instantaneous temperature field inside the wall can then be extracted and used for structure mechanics computations (mainly with EDF thermomechanics tool Code_Aster). The purpose of this paper is to present the application of this methodology to the simulation of a straight T-junction mock-up, similar to the Residual Heat Remover (RHR) junction found in N4 type PWR nuclear plants, and designed to study thermal striping and cracks propagation. The results are generally in good agreement with the measurements; yet, in certain areas of the flow, progress is still needed in L.E.S. modelling and in the treatment of instantaneous heat transfer at the wall.

다이캐스팅용 알루미늄의 성분 변화에 따른 LED 방열 특성 연구 (A Study of Characteristics of the LED Heat Dissipation According to the Changes in Composition of Die-casting Aluminum)

  • 여정규;허인성;유영문;이세일;최희락
    • 한국전기전자재료학회논문지
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    • 제27권8호
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    • pp.535-540
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    • 2014
  • Because of the development of LED technology, products due to high output and compact, the material with high thermal conductivity has been developed. Now that heat radiating part of the LED lamp is currently used for die casting of aluminum. The development of aluminum with excellent thermal conductivity is required. In this study, we measured the thermal properties and compared them while we produced the alloy by changing the component of die casting aluminum. From this study, the thermal conductivity and thermal resistance of the developed alloy were superior to die casting aluminum.

흑연 및 탄소나노튜브 혼합 방열도료의 특성 (Characteristics of Thermal Radiation Pastes Containing Graphite and Carbon Nanotube)

  • 이지훈;송만호;강찬형
    • 한국표면공학회지
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    • 제49권2호
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    • pp.218-224
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    • 2016
  • Thermal radiation pastes were prepared by dispersing carbon materials as fillers with a content of 1 weight percent in an acrylic resin. The kind of fillers was as follows; $25{\mu}m$ graphite, $45{\mu}m$ graphite, $15{\mu}m$ carbon nanotube(CNT), a 1:1 mixture of $25{\mu}m$ graphite and $15{\mu}m$ CNT, and a 1:1 mixture of $45{\mu}m$ graphite and $15{\mu}m$ CNT. Thermal emissivity was measured as 0.890 for the samples with graphite only, 0.893 for that with CNT only, and 0.892 for those containing both. After coating prepared pastes on a side of 0.4 mm thick aluminium plate and placing the plate over an opening of a box maintained at $92^{\circ}C$ with the coated side out, the temperatures on the uncoated side of the plates were measured. The samples containing graphite and CNT showed the lowest temperatures. The paste with mixed fillers was coated on the back side of the PCB of an LED module and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. The thermal resistance of the module with coated PCB was measured as 14.34 K/W whereas that with uncoated PCB was 15.02 K/W. The structure function analysis of T3ster data revealed that the difference between junction and ambient temperatures was $13.8^{\circ}C$ for the coated case and $18.0^{\circ}C$ for the uncoated. From the infrared images of heated LED modules, the hottest-spot temperature of the module with coated PCB was lower than that of the uncoated one for a given period of LED operation.

펠티어 소자를 이용한 40[W]급 LED 조명기구의 방열에 관한 연구 (Research on Heat-Sink of 40Watt LED Lighting using Peltier Module)

  • 어익수;양해술;최세일;황보승
    • 한국산학기술학회논문지
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    • 제8권4호
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    • pp.733-737
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    • 2007
  • 본 논문은 MCPCB에 다수의 와트급 LED를 모듈화하여 조명기구로 사용함에 따라 발생하는 열을 해결하기 위한 제안이다. LED가 조명기구로 사용되려면 칩의 용량이 커야하며 이 결과 P-N접합부의 열이 증가하게 됨으로 이를 해결하기 위해 펠티어 소자와 방열판 그리고 Fan을 설치하여 온도변화특성을 측정하였다. 또한 부가적으로 냉각소자와 방열판을 접속하는 열전도판, 단열재, Thermal Grease에 따른 온도변화특성을 실험하였다. 그 결과 방열판의 종류 및 체적에 따른 온도 변화가 가장 중요한 요소로 나타났다. Fan의 on, off에 따른 온도변화는 최대 $18[^{\circ}C]$의 변화폭을 주었으며 부가적 재료들도 $2{\sim}3[^{\circ}C]$의 온도변화에 영향을 주어 무시할 수 없는 요소임을 확인하였다.

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20W 가로등 모듈의 접합온도 측정 분석 (Analysis of Junction Temperature Measurement in 20W Module for Street Lighting)

  • 이세일;양종경;김남군;박대희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.163-163
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    • 2010
  • 기존 LED의 접합온도 및 열저항은 PKG 단계에서 측정 가능 하였다. PKG에서의 접합온도 측정방식과 같은 방법으로 C사의 1W High Power LED XP2 20개를 직렬 연결하여 모듈을 구성한 20W 가로등 모듈에 대하여 접합온도를 측정 하였다. 측정결과 20W 가로등 모듈의 접합온도는 약 $61^{\circ}C$로 나타났다.

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GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화 (Optical and Electrical Characteristics of GaN-based Blue LEDs after Low-current Stress)

  • 김서희;윤주선;신동수;심종인
    • 한국광학회지
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    • 제23권2호
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    • pp.64-70
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    • 2012
  • c-plane 사파이어 기판에서 성장된 1 $mm^2$ 대면적 InGaN/GaN 다중양자우물 청색 발광 다이오드의 스트레스 전후의 전기적, 광학적 특성 변화를 분석하였다. 스트레스 실험은 샘플 칩을 TO-CAN에 패키징하여 50 mA의 전류를 200시간 동안 인가하여 수행하였다. 스트레스 인가 전류는 다이오드의 순전압 특성을 이용한 접합온도(junction temperature) 측정 실험을 통하여 충분히 낮은 접합온도를 유지하는 값으로 선택하였다. 이렇게 선택한 50 mA의 전류 인가량에서 접합온도는 약 308 K였다. 308 K의 접합온도는 접촉저항(ohmic contact) 또는 GaN계 물질의 특성 변화에 영향을 주지 않는다고 가정하고 실험을 진행하였다. 스트레스 전후에 전류-전압, 광량-전류, 표면 광분포, 파장 스펙트럼 및 상대적 외부양자효율 특성을 측정 및 분석하였다. 측정결과, 스트레스 후 저전류 구간에서의 광량이 감소하고 상대적 외부양자효율이 감소하는 현상을 관찰하였다. 우리는 이러한 현상이 결함의 증가로 인한 비발광 재결합률 증가로부터 기인함을 이론적으로 검토하고 실험결과의 분석을 통하여 보였다.