• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.19 no.3
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• pp.52-61
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• 2020

This study developed a legibility distance(LD) model for three colors used in VMS according to luminance under foggy conditions through experiments. For this, a simulated environment was created, and LD values of red, green, and yellow color were collected by increasing the luminance. From the test results, the LDs for red at luminance levels of 2,000 cd/㎡ and 20,000 cd/㎡ and a visibility distance of 10m were 10.2m and 18.8m, respectively, which was an improvement of 84%. The LD was improved by 34% and 17% at a visibility distance of 20 m and 30 m, respectively. For green, the LD was improved by 69%, 63%, and 19% at visibility distance of 10m, 20m, 30m, respectively. For yellow, the LD was improved by 100%, 47%, and 36% at visibility distance of 10m, 20m, 30m, respectively. The LD models for three colors were developed by using two independent variables, luminance value and visibility distance. The adjusted coefficients of the red, green, and yellow model equations were calculated as 0.982, 0.978, and 0.915, respectively, and the explanatory power of all models was very high.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Journal of Korean Society of Transportation
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• v.22 no.3 s.74
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• pp.7-16
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• 2004

The purpose of this study was to find the characteristics of travel behavior and accessibility in terms of spatial structure. We analyzed travel behaviors and accessibility using a mode choice model and the Complementary Accessibility Index(CAI). The urban spatial structures that were compared were a compact city (CC) versus a sprawled city (SC), and high residential density districts (HD) versus low residential density districts (LD). First, CC and HDs residents had a shorter commuting distance than the CC and LDs residents. Second, behavior models showed that the use of Private cars for commuting in SCs was found to be greater than private car use in CCs, and that public transportation modes would be encouraged in CCs. Third, changes associated with the time and cost of commuting by private car generally affect the demand for public transportation modes in the CC. Also, analysis of cross elasticity suggests that changes of subway travel time affect the demand for buses very elastically. Fourth, the CAI of SC and LD were superior to the CC and HD even though the SC inefficient urban forms in terms of spatial structure. So, the spatial distribution of population density was also found to be an important factor affecting accessibility and energy savings.

• Toxicological Research
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• v.29 no.1
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• pp.53-60
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• 2013

Studies on milk transfer of drugs in non-human primates (NHPs) are among the crucial components in the assessment of peri- and postnatal toxicity because of the similarity between NHPs and humans. To evaluate the milk transfer of valproic acid (VPA) in NHPs, the toxicokinetics of VPA, an antiepileptic drug, were studied in pregnant cynomolgus monkeys. VPA was administered once daily to pregnant cynomolgus monkeys at doses of 0, 30, 90, and 270 mg/kg by oral gavage from Day 100 of gestation (GD 100) to Day 31 of lactation (LD 31). Concentrations of VPA and its metabolite, 4-ene-VPA, in the maternal plasma on GD 100, GD 140, and LD 30, and concentrations of VPA and 4-ene-VPA in the offspring plasma and milk on LDs 30 and 31, respectively, were quantified using liquid chromatography tandem mass spectrometry (LC/MS/MS). After administration of a single oral dose of VPA to pregnant monkeys on GD 100, the concentrations of VPA and 4-ene-VPA were generally quantifiable in the plasma of all treatment groups up to 24 hr after administration, which showed that VPA was absorbed and that the monkeys were systemically exposed to VPA and 4-ene-VPA. After administration of multiple doses of VPA to the monkeys, VPA was detected in the pup's plasma and in milk taken on LD 30 and LD 31, respectively, which showed that VPA was transferred via milk, and the pup was exposed to VPA. Further, the concentration of VPA in the milk increased with an increase in the dose. Extremely low concentrations of 4-ene VPA were detected in the milk and in the pup plasma. In conclusion, pregnant monkeys were exposed to VPA and 4-ene-VPA after oral administration of VPA at doses of 30, 90, and 270 mg/kg/day from GD 100 to LD 31. VPA was transferred via milk, and the VPA exposure to the pup increased with an increase in the dose of VPA. The metabolite, 4-ene VPA, was present in extremely low concentrations (< 0.5 ${\mu}g/ml$) in the milk and in the pup plasma. In this study, we established methods to confirm milk transfer in NHPs, such as mating and diagnosis of pregnancy by examining gestational sac with ultrasonography, collection of milk and pup plasma and determination of toxicokinetics, using cynomolgus monkeys.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.19 no.1
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• pp.81-96
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• 2007

Nonlinear shoaling characteristics over surf zone are numerically investigated based on spatially averaged NavierStokes equation. We also test the validity of gradient model for turbulent stresses due to wave breaking using the data acquainted during SUPERTANK LABORATORY DATA COLLECTION PROJECT(Krauss et al., 1992). It turns out that the characteristics length scale of breaking induced current is not negligible, which firmly stands against ever popular gradient model, ${\kappa}-{\varepsilon}$ model, but favors Large Eddy Simulation with finer grid. Based on these observations, we model the residual stress of spatially averaged NavierStokes equation after Lagrangian Dynamic Smagorinsky(Meneveau et al., 1996). We numerically integrate newly proposed wave equations using SPH with Gaussian kernel function. Severely deformed water surface profile, free falling water particle, queuing splash after landing of water particle on the free surface and wave finger due to structured vortex on rear side of wave crest(Narayanaswamy and Dalrymple, 2002) are successfully duplicated in the numerical simulation of wave propagation over uniform slope beach, which so far have been regarded very difficult features to mimic in the computational fluid mechanics.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.669-673
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• 2003

We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.28 no.5B
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• pp.547-558
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• 2008

With the advent of super cargo ship due to the explosive increase in the amount of cargo shipped via seas, some mega ports are under construction in South Korea, to accommodate the super cargo ship, and some of them already enter their final phase. To sustain the harbor tranquility, mega ports usually comprise huge vertical type breakwaters which are intrinsically vulnerable to the attack of long waves. In this rationale, we present the chamber type breakwater with a circular curtain wall - Eco-breaker 2, to alleviate the reflection of long waves and numerically investigate the hydraulic characteristics of Eco-breaker 2. As a wave driver, we use the Navier-Stokes eq., the most robust wave driver, using SPH (Smoothed Particle Hydrodynamics) and LES (Large Eddy Simulation). For the verification of numerical results, we also carried out hydraulic model test. It is shown that Eco-breaker 2 can effectively alleviate the reflection of long waves with its inherited large organized eddies encompassing the water chamber and some region off the curtain wall of varying size. It is also shown that the scope and strength of large organized eddies strongly depends on the incident wave period, and the reflection coefficient can be lowered to 0.18 by tuning the size of water chamber such that resident time at the chamber is just short of the half period of incident waves. Based on these results, we present the specification of Eco-breaker 2 to boost its use on the development of water environment friendly harbor worldwide.

• Horticultural Science & Technology
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• v.34 no.2
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• pp.207-219
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• 2016

Incandescent (INC) lamps have been commonly used to promote flowering of long-day (LD) plants during short-day (SD) seasons, but production of INC lamps has been prohibited due to their low energy efficiency. One of the light sources replacing INC lamps is a compact fluorescent lamp (CFL). This study was carried out to compare the flowering and morphological responses of LD annuals grown in a controlled environment greenhouse at $20^{\circ}C$ with a truncated 9-h SD and a 2- or 4-h night interruption (NI) or 6-h day extension (DE) provided by lighting from INC lamps, CFLs, or a combination of the two (INC + CFLs), in which red (R) to far-red (FR) ratios were 0.60, 8.46, and 0.91, respectively, and their PPFDs were $2.3{\pm}0.3{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$. After 12 weeks of treatment, $Petunia{\times}hybrida$ 'Wave Purple' plants did not flower under the SD photoperiod whereas 100% flowered under all of the LD treatments. Flowering was more rapid under the INC or INC + CFL lighting treatments compared to CFL and DE, and 4-h NI enhanced flowering compared to 2-h NI. In addition, plants under DE and 4h-NI generally flowered earlier than under 2-h NI. All petunia 'Single Dreams Red' plants flowered within 65 days after treatment, and flowering was hastened by some LD lighting regimens and lamp types. Plants under DE and 4h-NI generally flowered earlier than under 2-h NI INC or INC + CFL compared to FL, and flowering time under INC 6-h DE was earliest. In addition, INC lighting promoted stem elongation of both petunia cultivars. In both pansy (Viola${\times}wittrockiana$) 'Coiossus Yellow' and 'Delta Blue Blotch', LD treatments, especially using INC lamps, promoted flowering whereas the lighting period had little influence on days to flowering. Therefore, INC or INC + CFL with lower R:FR promoted flowering and stem extension and the promoting effect was larger with longer lighting periods. These results suggest that CFLs can be used to provide LDs to promote the flowering of petunia and pansy and to reduce stem elongation, although the promoting effect on flowering is sometimes less than that of INC lamps alone.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).